Results 181 to 190 of about 9,812 (215)

Recent implementations of Class-E power amplifiers

2012 Japan-Egypt Conference on Electronics, Communications and Computers, 2012
This survey paper addresses the progress in class-E power amplifiers during the last decade, from 2000 - Present. Over 200 papers are analyzed in this survey. Both wide bandgap (e.g. SiC and GaN) and narrower bandgap (e.g. GaAs, and Si) devices are considered.
Ahmed Rajaie, Ahmed Khorshid, Ali Darwish   +2 more
openaire   +1 more source

High frequency class E power amplifier

Proceedings First International IEEE Symposium Intelligent Systems, 2003
A monolithic RF power amplifier has been designed to provide 10 dBm output power at 1GHz to a 50 ohm load from 2.8 V supply. The amplifier has been developed first at 5 MHz and then at 1GHz. 0.8 /spl mu/m SiGe BiCMOS and 0.35 /spl mu/m Si CMOS technologies are used.
M. Hristov, G. Dodeva, O. Antonova, A. Roussel   +3 more
openaire   +1 more source

Microwave Class-E GaN Power Amplifiers

2005 Asia-Pacific Microwave Conference Proceedings, 2006
Two MMIC class-E power amplifiers (PA) in GaN HEMT technology are reported. The single stage class-E MMIC PA operates at 1.9 GHz. At 30V drain bias, a power-added-efficiency (PAE) of 57% and a maximum output power of over 37 dBm are achieved. At 40V drain bias, an output power of 38.7 dBm is achieved at 50% PAE corresponding to a power density of 7.4 W/
S. Gao, H. Xu, S. Heikman, U. Mishra, R.A. York   +4 more
openaire   +1 more source

Designing a Class E Power Amplifier through Modeling in Verilog-A

2020 International SoC Design Conference (ISOCC), 2020
A class E power amplifier model implemented in Verilog-A is presented in this paper. The model can be integrated in circuit simulators to account and incorporate process parameters. In this work, the model is used to design a class E power amplifier in 65nm process.
Arriel Ting, Anastacia B. Alvarez, Maria Theresa G. de Leon, Marc D. Rosales, Maria Patricia Rouelli Sabino-Santos, John Richard E. Hizon, Christopher Santos   +6 more
openaire   +1 more source

Simulation and design of a Class E power amplifier

2009 32nd International Spring Seminar on Electronics Technology, 2009
Class E switching-mode tuned power amplifier offers high efficiency at high frequencies. Class E power amplifier concept, introduced by Sokal, is not defined by a special topology. The most simple topology for class E power amplifier consists in a single switch device that operate at carrier frequency of the output signal and a load network that must ...
Serban Lungu, Alin Grama, Dorin Petreus, Adrian Taut   +3 more
openaire   +1 more source

A cryogenic class-E RF power amplifier

AIP Conference Proceedings, 1992
The high‐temperature superconductor research community and industry needs low‐cost applications for their devices in order to prosper. Low frequency (60 Hz) and RF power conversion could become one promising field for the use of HTS devices on a large scale.
O. M. Mueller, K. Park, W. A. Edelstein, C. Park, S. S. Bayya, R. L. Snyder   +5 more
openaire   +1 more source

Transistor power losses in the class E tuned power amplifier

IEEE Journal of Solid-State Circuits, 1978
The class E switching-mode tuned power amplifier offers efficiency approaching 100 percent. It is especially applicable at high frequencies because it minimizes the power dissipated during the switching transitions, even if the switching time is an appreciable fraction of the signal period.
F.H. Raab, N.O. Sokal
openaire   +1 more source

Broadband Operation of Class-E Power Amplifier with Shunt Filter

2020 18th IEEE International New Circuits and Systems Conference (NEWCAS), 2020
This work proposes a new approach for designing broadband class-E power amplifier (PA) with shunt filter. The approach is based on the double reactance compensation technique. Using this technique reactance variation of loaded Q-factor of a shunt filter and parameters of L-shaped matching circuit are adjusted to minimize variation of load impedance at ...
Pavel Afanasyev, Andrei Grebennikov, Ronan Farrell, John Dooley   +3 more
openaire   +1 more source

Electronically tunable class-E power amplifier

2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157), 2002
The 20-W class-E power amplifier (PA) described here is electronically tunable from 19 to 31 MHz (ratio 1.67). This PA employs a single RF-power MOSFET and operates from 25 V. The output-tuning network employs fixed inductors and high-voltage MOSFETs for variable capacitors.
openaire   +1 more source

An exact analysis of Class-E power amplifiers for RF communications

2004 IEEE International Symposium on Circuits and Systems (IEEE Cat. No.04CH37512), 2004
An exact analytical approach to the design of a Class-E high frequency power amplifier is presented. The analysis will optimize the load network parameters at the output of the switching transistor, while accounting for harmonics injected into the circuit from the choke inductor, finite quality factor of the output load network, and an exponential ...
Brett E. Klehn, Syed S. Islam
openaire   +1 more source