Results 301 to 310 of about 103,193 (347)

CMOS RF class-E power amplifier with power control

2016 IEEE 7th Latin American Symposium on Circuits & Systems (LASCAS), 2016
This paper proposes a 2.2 GHz CMOS Power Amplifier (PA) useful to S-Band applications with an effective 3-bit output power control for efficiency improvement. It uses an input transformer to reduce ground bounce effects and operates around 1 W of output power.
Diogo B. Santana, Hamilton Klimach, Eric E. Fabris, Sergio Bampi   +3 more
openaire   +1 more source

Power-Combining Class-E Amplifier With Finite Choke

IEEE Transactions on Circuits and Systems I: Regular Papers, 2011
A recently introduced power-combining scheme for a Class-E amplifier is, for the first time, experimentally validated in this paper. A small value choke of 2.2 nH was used to substitute for the massive dc-feed inductance required in the classic Class-E circuit.
Mury Thian, Vincent F. Fusco, Peter Gardner 0001   +2 more
openaire   +2 more sources

Class-E CMOS power amplifiers for RF applications

Proceedings of the 2003 International Symposium on Circuits and Systems, 2003. ISCAS '03., 2003
CMOS radio frequency class-E power amplifiers (PA) for GMSK/GFSK modulations have been designed and fabricated using 0.25/0.35/spl mu/m technologies. The operating frequencies are centred at 1.2GHz and 2.65GHz with 24-26dBm output power. Mode locking techniques are employed for both designs, in order to reduce the driving requirement.
Tang Tat Hung, Mourad N. El-Gamal
openaire   +1 more source

Floating Bulk Cascode Class-E Power Amplifier

IEEE Transactions on Circuits and Systems II: Express Briefs, 2019
In this brief, the switching behavior of the cascode topology is improved through the floating bulk (FB) technique. Although the cascode structure has the advantage of reducing voltage stress on transistors, its parasitic elements increase power loss.
Ali Reza Dehqan, Siroos Toofan, Hadi Lotfi   +2 more
openaire   +1 more source

Design and optimization of CMOS class-E power amplifier

Proceedings of the 2003 International Symposium on Circuits and Systems, 2003. ISCAS '03., 2003
A new class-E power amplifier design approach, in which the design problem is posed as combinatory optimization, is described. To incorporate the frequency dependent components in the optimization procedure, a simplified frequency domain simulation method was proposed to speed up the simulation.
Zhan Xu, Ezz I. El-Masry
openaire   +1 more source

A Current-Injection Class-E Power Amplifier

IEEE Microwave and Wireless Components Letters, 2020
A novel class-E power amplifier (PA) using a current-injection (CI) technique is presented in this letter. An auxiliary current source, which injects the current into the load during each turn-off period of switching transistors, is introduced into the conventional class-E PA.
Jian-Chang Du, Zhi-Gong Wang, Jian Xu, Yi-Fan Yang   +3 more
openaire   +1 more source

Class-E and inverse class-E switch-mode power amplifiers

Journal of Communications Technology and Electronics, 2012
Circuits of class-E and inverse class-E (Einv) switch-mode power amplifiers (PAs) are systemized on the basis of the principle of duality. New PA circuits (four class-Einv PA circuits and one class-E PA circuit) are proposed. The design relationships for values of reactive LC components of PA shaping circuits are given.
A. V. Vasil’ev, V. B. Kozyrev
openaire   +1 more source

A 60GHz Class-E Power Amplifier in SiGe

2006 IEEE Asian Solid-State Circuits Conference, 2006
A millimeter-wave Class-E tuned power amplifier is realized in 0.13 mum SiGe BiCMOS technology. To accomplish switching-mode operation at 60GHz, the transmission line input impedance transformation network provides a low real source impedance rather than optimum power match.
Alberto Valdes-Garcia, Scott Reynolds, Ullrich R. Pfeiffer   +2 more
openaire   +1 more source

Class-E high efficiency power amplifiers

[1992] Proceedings of the 35th Midwest Symposium on Circuits and Systems, 2003
Three switching mode power amplifiers are realized with collector (drain) efficiencies of 87%, 86% and 92% at 430 MHz/5 W, 100 MHz/12 W, and 5 MHz/62 W, respectively. These high efficiencies are achieved by the class-E technique and low insertion-loss load networks. Detailed design rules and major parameters are presented.
Q.-S. Tan, C. Ciotti, H.J. Schmitt
openaire   +1 more source

Recent implementations of Class-E power amplifiers

2012 Japan-Egypt Conference on Electronics, Communications and Computers, 2012
This survey paper addresses the progress in class-E power amplifiers during the last decade, from 2000 - Present. Over 200 papers are analyzed in this survey. Both wide bandgap (e.g. SiC and GaN) and narrower bandgap (e.g. GaAs, and Si) devices are considered.
Ahmed Rajaie, Ahmed Khorshid, Ali Darwish   +2 more
openaire   +1 more source