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High frequency class E power amplifier
Proceedings First International IEEE Symposium Intelligent Systems, 2003A monolithic RF power amplifier has been designed to provide 10 dBm output power at 1GHz to a 50 ohm load from 2.8 V supply. The amplifier has been developed first at 5 MHz and then at 1GHz. 0.8 /spl mu/m SiGe BiCMOS and 0.35 /spl mu/m Si CMOS technologies are used.
M. Hristov +3 more
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An improved method of power control with CMOS class-E power amplifiers
2008 IEEE International Symposium on Circuits and Systems (ISCAS), 2008In this paper, an improved method of power control is introduced to widen the range of output power with high efficiency. Two CMOS class-E power amplifiers (PA) with different output power are adopted in the design. In order to eliminate the phase mismatch of two paths, a continuously adjustable CMOS phase shifter with a predictable phase transfer ...
Tongqiang Gao +3 more
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Microwave Class-E GaN Power Amplifiers
2005 Asia-Pacific Microwave Conference Proceedings, 2006Two MMIC class-E power amplifiers (PA) in GaN HEMT technology are reported. The single stage class-E MMIC PA operates at 1.9 GHz. At 30V drain bias, a power-added-efficiency (PAE) of 57% and a maximum output power of over 37 dBm are achieved. At 40V drain bias, an output power of 38.7 dBm is achieved at 50% PAE corresponding to a power density of 7.4 W/
S. Gao +4 more
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2001
It is desirable to obtain high RF power amplifier efficiency in many practical applications. At least one, if not all, of the following requirements is important: low power consumption (especially for battery-operated equipment), low temperature rise of the components, high reliability, small size, and light weight. Although the parasitic energy losses
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It is desirable to obtain high RF power amplifier efficiency in many practical applications. At least one, if not all, of the following requirements is important: low power consumption (especially for battery-operated equipment), low temperature rise of the components, high reliability, small size, and light weight. Although the parasitic energy losses
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On the feasibility of application of class E RF power amplifiers in UMTS
Proceedings of the 2003 International Symposium on Circuits and Systems, 2003. ISCAS '03., 2003This paper investigates the feasibility of the application of class E RF power amplifiers in UMTS. A typical class E circuit has been designed and simulated, in conjunction with a linearization scheme based on the EER principle. The EER testbench uses ideal building blocks, since the emphasis is on the operation of the amplifier itself. Three different
Milosevic, D. +2 more
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A cascode modulated class-E power amplifier for wireless communications
Microelectronics Journal, 2011A cascode modulated CMOS class-E power amplifier (PA) is presented in this paper. It is shown that by applying a modulated signal to the gate of the cascode transistor the output power is modulated. The main advantage of the proposed technique is a high 35dB output power dynamic range. The peak power added efficiency (PAE) is 35%.
Daniel Sira, Pia Thomsen, Torben Larsen
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Simulation and design of a Class E power amplifier
2009 32nd International Spring Seminar on Electronics Technology, 2009Class E switching-mode tuned power amplifier offers high efficiency at high frequencies. Class E power amplifier concept, introduced by Sokal, is not defined by a special topology. The most simple topology for class E power amplifier consists in a single switch device that operate at carrier frequency of the output signal and a load network that must ...
Serban Lungu +3 more
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A cryogenic class-E RF power amplifier
AIP Conference Proceedings, 1992The high‐temperature superconductor research community and industry needs low‐cost applications for their devices in order to prosper. Low frequency (60 Hz) and RF power conversion could become one promising field for the use of HTS devices on a large scale.
O. M. Mueller +5 more
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Transistor power losses in the class E tuned power amplifier
IEEE Journal of Solid-State Circuits, 1978The class E switching-mode tuned power amplifier offers efficiency approaching 100 percent. It is especially applicable at high frequencies because it minimizes the power dissipated during the switching transitions, even if the switching time is an appreciable fraction of the signal period.
F.H. Raab, N.O. Sokal
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Designing a Class E Power Amplifier through Modeling in Verilog-A
2020 International SoC Design Conference (ISOCC), 2020A class E power amplifier model implemented in Verilog-A is presented in this paper. The model can be integrated in circuit simulators to account and incorporate process parameters. In this work, the model is used to design a class E power amplifier in 65nm process.
Arriel Ting +6 more
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