Results 281 to 290 of about 557,404 (343)
Some of the next articles are maybe not open access.
2001
It is desirable to obtain high RF power amplifier efficiency in many practical applications. At least one, if not all, of the following requirements is important: low power consumption (especially for battery-operated equipment), low temperature rise of the components, high reliability, small size, and light weight. Although the parasitic energy losses
openaire +1 more source
It is desirable to obtain high RF power amplifier efficiency in many practical applications. At least one, if not all, of the following requirements is important: low power consumption (especially for battery-operated equipment), low temperature rise of the components, high reliability, small size, and light weight. Although the parasitic energy losses
openaire +1 more source
Analysis of device performance in a class-E amplifier
(ICEEE). 1st International Conference on Electrical and Electronics Engineering, 2004., 2005The Class-E amplifier is an interesting topology for several high frequency applications, since it has a simple structure and needs only one switch. Circuit efficiency can be further increased, when using soft commutation techniques. For the ZVS class-E amplifier, the parasitic output capacitance of the switch is the most critical design parameter ...
M. Cotorogea, M. Ponce, E. Guerrero
openaire +1 more source
Transmission-line microwave Class-E amplifier
15th International Conference on Microwaves, Radar and Wireless Communications (IEEE Cat. No.04EX824), 2004A new technique for constructing the output network of a microwave Class-E power amplifier is proposed. The amplifier has been designed, fabricated and tested. At the frequency of 820 MHz, output power of 410 mW, with power-added efficiency of 70% and input DC voltage of 5 V, was demonstrated.
V.A. Printsovskii, V.G. Krizhanovski
openaire +1 more source
A 60GHz Class-E Power Amplifier in SiGe
2006 IEEE Asian Solid-State Circuits Conference, 2006A millimeter-wave Class-E tuned power amplifier is realized in 0.13 mum SiGe BiCMOS technology. To accomplish switching-mode operation at 60GHz, the transmission line input impedance transformation network provides a low real source impedance rather than optimum power match.
Alberto Valdes-Garcia +2 more
openaire +1 more source
Class E amplifier with inductive clamp circuit
RFIC) Symposium, 2005. Digest of Papers. 2005 IEEE Radio Frequency integrated Circuits, 2005A class E RF amplifier, which can operate into any load conditions without need for other additional circuitry to protect transistors, is introduced. This is provided by a new topology which incorporates inductive clamp circuitry to the basic class E amplifier circuit.
A. Eroglu, D. Lincoln
openaire +1 more source
High frequency class E power amplifier
Proceedings First International IEEE Symposium Intelligent Systems, 2003A monolithic RF power amplifier has been designed to provide 10 dBm output power at 1GHz to a 50 ohm load from 2.8 V supply. The amplifier has been developed first at 5 MHz and then at 1GHz. 0.8 /spl mu/m SiGe BiCMOS and 0.35 /spl mu/m Si CMOS technologies are used.
M. Hristov +3 more
openaire +1 more source
Class-E high efficiency power amplifiers
[1992] Proceedings of the 35th Midwest Symposium on Circuits and Systems, 2003Three switching mode power amplifiers are realized with collector (drain) efficiencies of 87%, 86% and 92% at 430 MHz/5 W, 100 MHz/12 W, and 5 MHz/62 W, respectively. These high efficiencies are achieved by the class-E technique and low insertion-loss load networks. Detailed design rules and major parameters are presented.
Q.-S. Tan, C. Ciotti, H.J. Schmitt
openaire +1 more source
Recent implementations of Class-E power amplifiers
2012 Japan-Egypt Conference on Electronics, Communications and Computers, 2012This survey paper addresses the progress in class-E power amplifiers during the last decade, from 2000 - Present. Over 200 papers are analyzed in this survey. Both wide bandgap (e.g. SiC and GaN) and narrower bandgap (e.g. GaAs, and Si) devices are considered.
Ahmed Rajaie +2 more
openaire +1 more source
Electronically tunable class-E power amplifier
2001 IEEE MTT-S International Microwave Sympsoium Digest (Cat. No.01CH37157), 2002The 20-W class-E power amplifier (PA) described here is electronically tunable from 19 to 31 MHz (ratio 1.67). This PA employs a single RF-power MOSFET and operates from 25 V. The output-tuning network employs fixed inductors and high-voltage MOSFETs for variable capacitors.
openaire +1 more source
Stabilization of Class E amplifiers with a diode network
AEU - International Journal of Electronics and Communications, 2010Abstract A three-element stabilization network consisting of diode and series resonant circuit to eliminate the instabilities seen in the Class E amplifiers for all load conditions when dc supply voltage is varied over entire dynamic power and frequency ranges, has been introduced.
openaire +1 more source