Results 201 to 210 of about 6,984 (242)

Large-scale silicon photonics switches for AI/ML interconnections based on a 300-mm CMOS pilot line. [PDF]

Nanophotonics
Suzuki K, Konoike R, Heinsalu S, Namiki S, Kawashima H, Ikeda K.   +5 more
europepmc   +1 more source

Review of Research Advances in Gyroscopes' Structural Forms and Processing Technologies Viewed from Performance Indices. [PDF]

Sensors (Basel)
Luo H, Su H, Tang Q, Nisa FU, He L, Zhang T, Liu X, Liu Z.   +7 more
europepmc   +1 more source

Low Phase Noise, Dual-Frequency Pierce MEMS Oscillators with Direct Print Additively Manufactured Amplifier Circuits. [PDF]

Micromachines (Basel)
Li L, Lan D, Han X, Liu T, Dewdney J, Zaman A, Guneroglu U, Martinez CM, Wang J.   +8 more
europepmc   +1 more source

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CMOS-MEMS Filters

2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, 2008
Silicon radio integration is currently limited by the ability to achieve high-Q filters on chip with the RF transistors. Furthermore, multi-terminal radio trends are driving the need for widely tunable filters. Progress on high-Q electrically-selectable CMOS-MEMS micromechanical filters and medium-Q widely tunable CMOS-MEMS LC filters is described ...
G. K. Fedder, T. Mukherjee
openaire   +1 more source

Packaging of CMOS MEMS

Microelectronics Reliability, 2000
Abstract Two case studies of packaging for sensor microsystems based on CMOS IC technology with post-CMOS micromachining and film deposition are presented. The first case includes a filter directly attached to the CMOS chip and a plastic ball grid array as first level packaging for CMOS integrated thermoelectric sensor arrays used for intrusion ...
Henry Baltes, Oliver Brand, Marc Waelti
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A CMOS-MEMS arrayed RGFET

2014 IEEE International Frequency Control Symposium (FCS), 2014
To greatly enhance the performance of our previously developed CMOS-MEMS resonant gate field effect transistor (RGFET) [1], a novel CMOS-MEMS RGFET array which combines a metal/oxide composite resonant-gate arrayed structure and a FET arrayed transducer has been proposed for the first time utilizing the TSMC 0.35 μm CMOS technology together with a ...
Chi-Hang Chin, Sheng-Shian Li
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RF CMOS-MEMS cantilever resonator

2013 IEEE International Conference on Smart Instrumentation, Measurement and Applications (ICSIMA), 2013
This paper presents use of the simple cantilever beam as RF CMOS-MEMS resonator, which can be scaled like transistor with improved performance. This resonator can be used in the oscillator and filter part of RF transceiver, which can actually be fabricated on chip without losing its Q-factor. The cantilever beam resonator was designed using COMSOL4.3b™
A. Anwar Zainuddin, J. Karim, A. N. Nordin, S. P. Mohanraj, M. Syamsi M. Taufik, Sheroz Khan   +5 more
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Ultra-wideband CMOS-MEMS radio

2009 IEEE International Conference on Ultra-Wideband, 2009
Current ultrawideband (UWB) radios have several unsolved issues in front-end performance including difficult and expensive clock synthesizer designs, and power hungry baseband functions. In fact, the expected breakthrough of the very useful UWB technology has stalled since realized high bitrate integrated radios are much too expensive in the sense that
Esa Tiiliharju, Tero Koivisto, Janne Maunu, Nikolai Chekurovy, Ilkka Tittoneny   +4 more
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CMOS-MEMS atomic force microscope

2011 16th International Solid-State Sensors, Actuators and Microsystems Conference, 2011
We present a CMOS-MEMS atomic force microscope (AFM) with integrated 3-D MEMS actuation and 3-axis position sensing. CMOS driving and sensing electronics have been integrated in the same fabrication process. Our goal is to replace piezoelectric positioning systems which are bulky (leading to thermal drift and poor vibration immunity) and suffer from ...
N. Sarkar, R. R. Mansour, O. Patange, K. Trainor   +3 more
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Advanced CMOS–MEMS Resonator Platform

IEEE Electron Device Letters, 2012
Deep-submicrometer-gap CMOS-MEMS “composite” resonators fabricated using 0.18- μm-1-poly-6-metal foundry CMOS technology have been demonstrated for the first time to substantially improve their electromechanical coupling coefficient, hence leading to a motional impedance of only 880 kΩ at 15.3 MHz.
Cheng-Syun Li, Li-Jen Hou, Sheng-Shian Li   +2 more
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