Results 211 to 220 of about 6,984 (242)
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CMOS–MEMS Lateral Electrothermal Actuators
Journal of Microelectromechanical Systems, 2008In this paper, a type of lateral electrothermal (ET) actuator fabricated with post-CMOS micromachining is presented. The actuator is a beam with a multimorph structure, composed of CMOS dielectric and metal interconnect. Following structural release, the actuators demonstrate self-assembly under the moments arising from residual stress.
P.J. Gilgunn +3 more
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CMOS MEMS - present and future
Technical Digest. MEMS 2002 IEEE International Conference. Fifteenth IEEE International Conference on Micro Electro Mechanical Systems (Cat. No.02CH37266), 2003The paper reviews the state-of-the-art in the field of CMOS-based microelectromechanical systems (MEMS). The different CMOS MEMS fabrication approaches, pre-CMOS, intermediate-CMOS, and post-CMOS, are summarized and examples are given. Two microsystems fabricated with post-CMOS micromachining are presented, namely a mass-sensitive chemical sensor for ...
H. Baltes +4 more
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Proceedings of the 2006 IEEE/ACM international conference on Computer-aided design - ICCAD '06, 2006
CMOS-MEMS integration can improve the performance of the MEMS (micro-electromechanical systems), allows for smaller packages and leads to a lower packaging and instrumentation cost. As argued in this article, processing MEMS above CMOS is the most promising approach for CMOS-MEMS integration, but it limits the thermal budget for MEMS processing.
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CMOS-MEMS integration can improve the performance of the MEMS (micro-electromechanical systems), allows for smaller packages and leads to a lower packaging and instrumentation cost. As argued in this article, processing MEMS above CMOS is the most promising approach for CMOS-MEMS integration, but it limits the thermal budget for MEMS processing.
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CMOS-MEMS Capacitive Humidity Sensor
2009 IEEE 22nd International Conference on Micro Electro Mechanical Systems, 2009This paper reports a method for improving the sensitivity of integrated capacitive chemical sensors by removing the underlying substrate. The sensor is integrated with CMOS testing electronics using mask-less post-processing followed by inkjet deposition of sensitive polymer.
Nathan Lazarus +3 more
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Proceedings of IEEE Sensors, 2003
The gyroscope reported in this paper is a lateral-axis angular rate sensor with in-plane vibration and out-of-plane Coriolis acceleration sensing. The sensor plus on-chip CMOS circuitry is about 1 mm by 1 mm in size and is fabricated by a post-CMOS micromachining process that uses interconnect metal layers as etching mask(s) and a single-crystal ...
null Huikai Xie, G.K. Fedder
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The gyroscope reported in this paper is a lateral-axis angular rate sensor with in-plane vibration and out-of-plane Coriolis acceleration sensing. The sensor plus on-chip CMOS circuitry is about 1 mm by 1 mm in size and is fabricated by a post-CMOS micromachining process that uses interconnect metal layers as etching mask(s) and a single-crystal ...
null Huikai Xie, G.K. Fedder
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Frequency-tunable CMOS-MEMS slot antenna
Proceedings of the 2012 IEEE International Symposium on Antennas and Propagation, 2012This paper presented a frequency-reconfigurable slot antenna fabricated in 0.18-µm CMOS process with a chip size of 1.2×1.2 mm2. By utilizing the multi-state actuators, the frequency of this antenna can be switched to 43, 47, 50.5, 54, 57.5 GHz with return loss better than 20 dB. The measured antenna patterns agree well with the simulation results.
Chun-Chi Lin +3 more
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(Invited) CMOS MEMS Integration
ECS Transactions, 2011The "More than Moore" trend in the microelectronics industry is driving a renewed interest in mixed-physics CMOS MEMS integration. Integration becomes a necessity for multi-component microsystems, where interconnect issues are significant. Integration also drives down parasitic capacitances and provides opportunities for ultra-low-power microsystems ...
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A CMOS-MEMS Thermoelectric Infrared Sensor
2010 International Conference on Electrical and Control Engineering, 2010This paper presents a thermoelectric infrared (IR) sensor which comprise of an infrared detector and a readout circuitry. It is designed by TSMC 0.35 μm CMOS process with subsequent micromachining technology. The presented infrared sensing device can achieve the responsivity of 1277.92 V/W and time constant of 2.63 ms. The instrumentation amplifier (IA)
Hung-Yu Wang +3 more
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CMOS-MEMS free-free beam resonators
2010 Proceedings of the European Solid State Device Research Conference, 2010In this paper a 25 MHz free-free beam flexural resonator monolithically integrated in a 0.35 um CMOS technology is presented. A comparison between the frequency response and electrical characteristics between free-free beam and clamped-clamped beams shows higher qualities factor for free-free beams which will allow better oscillators for frequency ...
J.L. Lopez +6 more
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Optimization of unreleased CMOS-MEMS RBTs
2016 IEEE International Frequency Control Symposium (IFCS), 2016In this paper, we present an efficient framework for optimization of MEMS resonators based on model order reduction and memoization to significantly speed-up computations 40 x). Owing to their technological importance and numerous applications, unreleased CMOS resonant body transistors (RBTs) are considered.
Bichoy Bahr, Luca Daniel, Dana Weinstein
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