Results 101 to 110 of about 163,537 (317)
Amplificador de baixo ruído CMOS porta comum para 2,4 GHZ [PDF]
, 2012 Dissertação (mestrado) - Universidade Federal de Santa Catarina, Centro Tecnológico, Programa de Pós-Graduação em Engenharia Elétrica, Florianópolis, 2009Este trabalho apresenta um projeto de um amplificador de baixo ruído (LNA - do inglês, Low Noise ...
Pereira, Maicon Deivid
core
In-Pixel source follower transistor RTS noise behavior under ionizing radiation in CMOS image sensors [PDF]
, 2012 This paper presents temporal noise measurement results for several total ionizing dose (TID) steps up to 2.19 Mrad of an image sensor designed with a 0.18-μm CMOS image sensor process.
Goiffon, Vincent +2 more
core +1 more source
Advanced Functional Materials, EarlyView.Thermally oxidized MoS2‐based radio‐frequency switches enable a multifunctional platform that unifies broadband RF switching and in‐memory computation. The device achieves a cutoff frequency of 33.2 THz with high energy efficiency and supports hardware‐aware signal processing.
Juho Son +5 more
wiley +1 more source
Disorder robust, ultra-low power, continuous-wave four-wave mixing in a topological waveguide
NanophotonicsFour-wave mixing is a widely used nonlinear process for wavelength conversion, parametric amplification and signal regeneration in various Kerr devices, which enables wavelength-tunability and lower-power operation in compact optical systems.
Choi Ju Won +6 more
doaj +1 more source
Advanced Functional Materials, EarlyView.A reconfigurable RRAM platform utilizing thermally pre‐formed filaments (TPFs) is developed to realize robust hardware security. By exploiting the thermodynamic stochasticity of TPFs, exceptionally reliable physically unclonable functions (PUFs) are achieved.
Seongbin Kwon +4 more
wiley +1 more source
Overview of ionizing radiation effects in image sensors fabricated in a deep-submicrometer CMOS imaging technology [PDF]
, 2009 An overview of ionizing radiation effects in imagers manufactured in a 0.18-μm CMOS image sensor technology is presented. Fourteen types of image sensors are characterized and irradiated by a 60Co source up to 5 kGy.
Goiffon, Vincent +2 more
core +1 more source
Interface Effects in Ultrathin Silicon on Insulator Films
Advanced Functional Materials, EarlyView.This work establishes a systematic framework to discriminate how bulk and interface phenomena affect charge transport in ultrathin P‐doped silicon‐on‐insulator (SOI) films. For Si films below 15 nm, electrical characterization demonstrates that interface states drive charge transport, shifting the metal‐insulator transition (MIT) critical dopant ...
Andrea Pulici +8 more
wiley +1 more source
CMOS High-Performance 5-2 and 6-2 Compressors for High-Speed Parallel Multipliers [PDF]
Informacije MIDEM, 2020 A. Rahnamaei, A. Rahnamaei
doaj +1 more source
A Low-Power CMOS Wireless Acoustic Sensing Platform for Remote Surveillance Applications
Sensors, 2019 A low-power wireless acoustic sensing platform for remote surveillance applications based on a 180 nm CMOS technology is proposed in this paper. The audio signal, which is acquired by a microphone, is first amplified and filtered. Then, the analog signal
Yong Wang +3 more
doaj +1 more source
Dynamic range optimisation of CMOS image sensors dedicated to space applications [PDF]
, 2007 Nowadays, CMOS image sensors are widely considered for space applications. Their performances have been significantly enhanced with the use of CIS (CMOS Image Sensor) processes in term of dark current, quantum efficiency and conversion gain.
Huger, Nicolas +5 more
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