Results 81 to 90 of about 163,537 (317)

Identification of radiation induced dark current sources in pinned photodiode CMOS image sensors [PDF]

, 2011
This paper presents an investigation of Total Ionizing Dose induced dark current sources in Pinned PhotoDiodes (PPD) CMOS Image Sensors based on pixel design variations. The influence of several layout parameters is studied. Only one parameter is changed
V. Goiffon, Goiffon, Vincent, C. Virmontois, M. Gaillardin, Gaillardin, Marc, P. Magnan, P. Martin-Gonthier, Virmontois, Cédric, Girard, Sylvain, P. Paillet, Paillet, Philippe, S. Girard, Cervantes, Paola, P. Cervantes, Magnan, Pierre, Martin-Gonthier, Philippe   +15 more
core   +1 more source

Solution‐Processed Two‐Dimensional Indium Oxide on Sodium‐Embedded Alumina for Reconfigurable Optoelectronic Synaptic Transistors

Advanced Functional Materials, EarlyView.
Wafer‐scale two‐dimensioanl In2Se3 oxidized into InOx on sodium‐embedded beta‐alumina enables multifunctional reconfigurable electronics. Sodium ions accumulate within distinct spatial distribution under drain‐controlle and gate‐controlled operation. Drain‐control operation gives controllability of ultraviolet‐driven optoelectronic synaptic conductance
Jinhong Min, Yonghyun Albert Kwon, Hyunbin Kim, Jihyun Kim, Myeongjin Jung, Jaewon Heo, Gwang Ya Kim, Vlastimil Mazanek, Zdeněk Sofer, In Soo Kim, Jeong Ho Cho, Hyesung Park, Sang Min Won, Joohoon Kang   +13 more
wiley   +1 more source

Enabling Variability-Aware Design-Technology Co-Optimization for Advanced Memory Technologies

Journal of Microelectronic Manufacturing, 2020
This paper presents a TCAD-based methodology to enable Design-Technology Co-Optimization (DTCO) of advanced semiconductor memories. After reviewing the DTCO approach to semiconductor devices scaling, we introduce a multi-stage simulation flow to study ...
Salvatore M. Amoroso, Plamen Asenov, Jaehyun Lee, Nara Kim, Ko-Hsin Lee, Yaohua Tan, Yong-Seog Oh, Lee Smith, Xi-Wei Lin , Victor Moroz   +9 more
doaj   +1 more source

Radiation damages in CMOS image sensors: testing and hardening challenges brought by deep sub-micrometer CIS processes [PDF]

, 2010
This paper presents a summary of the main results we observed after several years of study on irradiated custom imagers manufactured using 0,18 µm CMOS processes dedicated to imaging.
Goiffon, Vincent, Magali Estribeau, Estribeau, Magali, Virmontois, Cédric, Pinel, Philippe, Philippe Pinel, Pierre Magnan, Corbière, Franck, Cédric Virmontois, Vincent Goiffon, Cervantes, Paola, Paola Cervantes, Franck Corbière, Magnan, Pierre   +13 more
core   +1 more source

Electrode and Microstructure Dependence of Oxygen Diffusion in Ferroelectric Hafnium Zirconium Oxide Thin Films

Advanced Functional Materials, EarlyView.
Significant nanoscale oxygen diffusion coefficient variations are measured in ferroelectric hafnium zirconium oxide films with grain boundaries and electrode interfaces exhibiting values 104 times larger than the grain cores. Overall coefficients are 10X larger for films prepared with metal nitride electrodes compared to refractory metals. New insights
Liron Shvilberg, Thomas W. Pfeifer, Chuanzhen Zhou, Yong Kyu Choi, Duk‐Hyun Choe, Patrick E. Hopkins, Jon F. Ihlefeld   +6 more
wiley   +1 more source

Design of a 90 GHz SOI Fin Electro-Optic Modulator for High-Speed Applications

Applied Sciences, 2019
Introducing high speed networks, such as the fifth generation of mobile technology and related applications including the internet of things, creates a pressing demand for hardware infrastructure that provides sufficient bandwidth.
Hany Mahrous, Mostafa Fedawy, Mona El Sabbagh, W. Fikry, Michael Gad   +4 more
doaj   +1 more source

Radiation Effects in CMOS Isolation Oxides: Differences and Similarities With Thermal Oxides [PDF]

, 2013
Radiation effects in thick isolation oxides of modern CMOS technologies are investigated using dedicated test structures designed using two commercial foundries.
Martinez, Martial, Gaillardin, M., Goiffon, Vincent, Gaillardin, Marc, Estribeau, Magali, Paillet, Philippe, Goiffon, V., Girard, Sylvain, Marcandella, Claude, Magnan, Pierre, Martinez, M., Magnan, P.   +11 more
core   +1 more source

Integrated Field‐Free SOT Domain‐Wall Synapses and MTJ Stochastic Neurons for Hardware Boltzmann Machines

Advanced Functional Materials, EarlyView.
Field‐free spin‐orbit torque domain‐wall synapses integrated with stochastic MTJ neurons enable compact hardware Boltzmann machines. Leveraging intrinsic stochasticity and multi‐level conductance, the system achieves efficient probabilistic learning with high accuracy, demonstrating a scalable spintronic platform for energy‐efficient edge AI.
Aijaz H. Lone, Meng Tang, Camelia Florica, Bin He, Jingkai Xu, Selma Amara, Georgian Melinte, Xixiang Zhang, Gianluca Setti   +8 more
wiley   +1 more source

Historical Foundation and Practical Guideline for Ferroelectric Switching Kinetic Studies

Advanced Functional Materials, EarlyView.
The P and U pulses in the conventional PUND measurements are not identical because of the interplay between switching current and the measurement circuit components. This circuit effect can lead to a shift in polarization transients and misinterpreted physics in the switching kinetics.
Yi Liang, Pat Kezer, John T. Heron
wiley   +1 more source

Carrera de Especialización en Microelectrónica de la FIUBA: nuevo posgrado estratégico para impulsar el desarrollo tecnológico en Argentina y la región

Revista Elektrón
En marzo de 2026 el Consejo Superior de la Universidad de Buenos Aires aprobó la creación de la Carrera de Especialización en Microelectrónica en modalidad a distancia, dependiente de la Facultad de Ingeniería (FIUBA).
Mariano Garcia Inza, Pablo Gomez, Ariel Lutenberg   +2 more
doaj   +1 more source