Results 81 to 90 of about 156,051 (256)
Low Power-High Gain Bulk-Driven 3 Stages CMOS Miller OTA in 130nm Technology
Sakarya Üniversitesi Fen Bilimleri Enstitüsü Dergisi, 2020 The requirement of low-power analog circuits has been raised in recent years due to the strict limitation of power consumption in modern applications.
Engin Afacan
doaj +1 more source
Estimation and Modeling of the Full Well Capacity in Pinned Photodiode CMOS Image Sensors [PDF]
, 2013 This letter presents a simple analytical model for the evaluation of the full well capacity (FWC) of pinned photodiode (PPD) CMOS image sensors depending on the operating conditions and on the pixel parameters.
Pelamatti, Alice +4 more
core +1 more source
Binary‐to‐Ternary Reconfigurable Transistors Using Plasma‐Assisted MoS2
Advanced Functional Materials, EarlyView.A binary‐to‐ternary reconfigurable transistor is demonstrated using a dual‐gated molybdenum disulfide homojunction with localized O2 plasma treatment. The device exhibits on/intermediate and intermediate/off current ratios of 102 and 104, respectively, and the intermediate state is electrically tunable in the ternary mode.
Yeonghyeon Ko +7 more
wiley +1 more source
Smart CMOS image sensor for lightning detection and imaging [PDF]
, 2013 We present a CMOS image sensor dedicated to lightning detection and imaging. The detector has been designed to evaluate the potentiality of an on-chip lightning detection solution based on a smart sensor.
Goiffon, Vincent +12 more
core +1 more source
Advanced Functional Materials, EarlyView.A CMOS‐compatible, all‐dielectric Silicon‐on‐Glass reflective metasurface enables low–loss terahertz wavefront control for future 6G wireless communication. Mie‐resonant silicon pillars provide full phase coverage near 500 GHz, achieving experimentally validated single‐, dual‐, and five‐beam steering with sub‐1.5° angular error and less than 3 dB ...
Rithwik Premanand +6 more
wiley +1 more source
Identification of radiation induced dark current sources in pinned photodiode CMOS image sensors [PDF]
, 2011 This paper presents an investigation of Total Ionizing Dose induced dark current sources in Pinned PhotoDiodes (PPD) CMOS Image Sensors based on pixel design variations. The influence of several layout parameters is studied. Only one parameter is changed
V. Goiffon +15 more
core +1 more source
Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing
Advanced Functional Materials, EarlyView.A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin +7 more
wiley +1 more source
An Extended CMOS ISFET Model Incorporating the Physical Design Geometry and the Effects on Performance and Offset Variation [PDF]
, 2011 17/04/13 meb. Accepted version OK to pub.This paper presents an extended model for the CMOS-based Ion-Sensitive-Field-Effect-Transistor (ISFET), incorporating design parameters associated with the physical geometry of the device.
Liu, Y +14 more
core +1 more source
Advanced Functional Materials, EarlyView.The liposome nanoreactor method enables uniform metal nanoparticle synthesis using the interior as a reaction environment. We demonstrate that peptide sequences and lipid compositions act as a functional molecular switch to control reaction environments in liposome nanoreactors.
Yuya Abe +6 more
wiley +1 more source
Optoelectrical performance evolution of CMOS image sensors exposed to gamma radiation [PDF]
, 2009 In this paper we present a study of ionizing radiation effects, up to 5 kGy, in several CMOS image sensors manufactured using a commercial 0.18 μm technology dedicated to ...
Goiffon, Vincent +2 more
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