Results 71 to 80 of about 156,051 (256)

CMOS detectors for space applications: from R&D to operational program with large volume foundry [PDF]

, 2010
Nowadays, CMOS image sensors are widely considered for space applications. The use of CIS (CMOS Image sensor) processes has significantly enhanced their performances such as dark current, quantum efficiency and conversion gain.
Breart de Boisanger, Michel, Rolando, Sébastien, O. Saint-Pe, P. Magnan, F. Larnaudie, P. Martin-Gonthier, F. Corbiere, S. Rolando, Corbière, Franck, Larnaudie, Franck, Saint-Pé, Olivier, M. Breart de Boisanger, Magnan, Pierre, Martin-Gonthier, Philippe   +13 more
core   +1 more source

Multimode Oxide‐Based Optoelectronic Memtransistor for In‐Sensor Vision Processing

Advanced Functional Materials, EarlyView.
A multimode optoelectronic memtransistor (OEMT) is demonstrated for vision explainable artificial intelligence (VXAI) hardware. By integrating optical sensing, electrical masking, and non‐volatile memory, the device enables key operations required for generating saliency information.
Min Gu Lee, Geunyoung Kim, Hwa Young Kim, Do Hoon Kim, Hanchan Song, Huisu Noh, Jungwan Noh, Seungwoo Lee, Sang‐Hee Ko Park, Himchan Cho, Kyung Min Kim   +10 more
wiley   +1 more source

Enabling Variability-Aware Design-Technology Co-Optimization for Advanced Memory Technologies

Journal of Microelectronic Manufacturing, 2020
This paper presents a TCAD-based methodology to enable Design-Technology Co-Optimization (DTCO) of advanced semiconductor memories. After reviewing the DTCO approach to semiconductor devices scaling, we introduce a multi-stage simulation flow to study ...
Salvatore M. Amoroso, Plamen Asenov, Jaehyun Lee, Nara Kim, Ko-Hsin Lee, Yaohua Tan, Yong-Seog Oh, Lee Smith, Xi-Wei Lin , Victor Moroz   +9 more
doaj   +1 more source

New source of random telegraph signal in CMOS image sensors [PDF]

, 2012
We report a new source of dark current random telegraph signal in CMOS image sensors due to meta-stable Shockley-Read-Hall generation mechanism at oxide interfaces.
Goiffon, Vincent, Gaillardin, Marc, Virmontois, Cédric, Magnan, Pierre, Martin-Gonthier, Philippe   +4 more
core  

Displacement Damage Effects in Pinned Photodiode CMOS Image Sensors [PDF]

, 2012
This paper investigates the effects of displacement damage in Pinned Photodiode (PPD) CMOS Image Sensors (CIS) using proton and neutron irradiations. The DDD ranges from 12 TeV/g to ${1.2 times 10^{6}}$ TeV/g.
Bardoux, A., Goiffon, Vincent, Corbière, Franck, Bardoux, Alain, Virmontois, Cédric, Goiffon, V., Girard, Sylvain, Corbiere, F., Magnan, Pierre, Magnan, P.   +9 more
core   +1 more source

Functionalizing Micro‐to‐Mesoscopic Electrode Architectures for Regulating Electron Transfer Behaviors in Electrocatalysis

Advanced Functional Materials, EarlyView.
A systematic review is conducted to assess the influence of electrode architecture across micro‐ to mesoscopic length scales on electron‐transfer pathways in electrocatalysis. We discuss the structure‐activity relationships in electrocatalytic applications, including resource recovery and environmental remediation, and provide cost‐effective, efficient
Manshu Zhao, Jiaojiao Zhang, Shideng Yuan, Xinmeng Yu, Keming Wan, Xiaoguang Duan, Zhining Wang   +6 more
wiley   +1 more source

Design of a 90 GHz SOI Fin Electro-Optic Modulator for High-Speed Applications

Applied Sciences, 2019
Introducing high speed networks, such as the fifth generation of mobile technology and related applications including the internet of things, creates a pressing demand for hardware infrastructure that provides sufficient bandwidth.
Hany Mahrous, Mostafa Fedawy, Mona El Sabbagh, W. Fikry, Michael Gad   +4 more
doaj   +1 more source

Radiation Effects on CMOS Image Sensors With Sub-2 µm Pinned Photodiodes [PDF]

, 2012
CMOS image sensor hardness under irradiation is a key parameter for application fields such as space or medical. In this paper, four commercial sensors featuring different technological characteristics (pitch, isolation or buried oxide) have been ...
Place, Sébastien, Goiffon, Vincent, Roy, François, Carrere, Jean-Pierre, Magnan, Pierre, Allegret, Stephane   +5 more
core   +1 more source

Atom Probe Tomography as an Emerging Tool for Understanding Defect‑Driven Mechanisms in HfO2‑Based Ferroelectrics

Advanced Functional Materials, EarlyView.
This Perspective highlights atom probe tomography as a powerful tool for understanding the atomic‐scale defect chemistry in HfO2‐based ferroelectrics. 3D mapping of dopants, point defects, and interface chemistry can provide new insight into defect‐driven mechanisms underpinning the ferroelectricity in the system and guide the design of more reliable ...
Kasper Hunnestad, Catherine Dubourdieu, Alexei Gruverman, Dennis Meier   +3 more
wiley   +1 more source

Noise‐Limited Bit Precision in Ferroelectric Synaptic Transistors for High‐Resolution Neuromorphic Computing

Advanced Functional Materials, EarlyView.
Low‐frequency noise spectroscopy defines the resolvable conductance states of synaptic FeFETs by coupling read‐current fluctuation with usable dynamic range. The resulting noise‐limited bit precision establishes a universal, device‐agnostic reliability metric beyond the memory window, enabling quantitative benchmarking and rational design of high ...
Jaehong Park, Yeonseop Shin, Changhyeon Han, Sangwoo Kim, Eunchan Park, Youngchan Cho, Jaehong Min, Hyunjun Ahn, Jaekyoung Park, Cheol‐Woong Yang, Jangsaeng Kim, Daewoong Kwon, Wonjun Shin   +12 more
wiley   +1 more source