Results 71 to 80 of about 163,537 (317)
Generic radiation hardened photodiode layouts for deep submicron CMOS image sensor processes [PDF]
, 2011 Selected radiation hardened photodiode layouts, manufactured in a deep submicron CMOS Image Sensor technology, are irradiated by 60Co gamma-rays up to 2.2 Mrad(SiO2) and studied in order to identify the most efficient structures and the guidelines ...
V. Goiffon +11 more
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Spatially Modulated Morphotropic Phase Boundaries in a Compressively Strained Multiferroic Thin Film
Advanced Functional Materials, EarlyView.ABSTRACT The coexisting rhombohedral‐like (R′, MA) and tetragonal‐like (T′, MC) monoclinic phases in compressively strained bismuth ferrite thin films exhibit exceptional piezoelectric and magnetic properties. While previous studies have largely focused on probing the morphotropic phase boundaries (MPBs) comprising ordered R′/T′ twins, their self ...
Ting‐Ran Liu +7 more
wiley +1 more source
Feasibility of Ge CMOS for Beyond Si-CMOS [PDF]
ECS Meeting Abstracts, 2010 Abstract not Available.
Akira Toriumi +6 more
openaire +1 more source
Smart CMOS image sensor for lightning detection and imaging [PDF]
, 2013 We present a CMOS image sensor dedicated to lightning detection and imaging. The detector has been designed to evaluate the potentiality of an on-chip lightning detection solution based on a smart sensor.
Goiffon, Vincent +12 more
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Advanced Functional Materials, EarlyView.Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand +13 more
wiley +1 more source
Novel readout circuit architecture for CMOS image sensors minimizing RTS noise [PDF]
, 2011 This letter presents a novel readout architecture and its associated readout sequence for complementary metal–oxide– semiconductor (CMOS) image sensors (CISs) based on switch biasing techniques in order to reduce noisy pixel numbers induced by in-pixel
Philippe Martin-Gonthier +3 more
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Advanced Functional Materials, EarlyView.This study demonstrates that memristors can replace conventional 2T–1C driving circuits with simplified 1T–1 m architectures by exploiting resistance switching. With ultra‐low switching voltages (< ±0.2 V) and multi‐level resistance states, the memristors precisely control the current injected into organic light‐emitting diodes (OLEDs).
Dong Hyun Kim +6 more
wiley +1 more source
Molecules, 2018 Rare-earth doped silica-based glasses lead the optical materials due to their tailorable spectroscopic and optical properties. In this context, we took advantage of the sol-gel process to prepare various Eu-doped silica glasses to study their luminescent
Hussein Fneich +4 more
doaj +1 more source
The ARTEMIS project: Mixed-Signal IC for Edge-AI-based Classification of ECG Signals
Current Directions in Biomedical Engineering, 2023 Atrial fibrillation (AF) is a common heart arrhythmia and is closely associated with causing strokes. Diagnosis is usually performed with Holter monitors over longer periods of time, causing discomfort to the patient. The proposed mixed-signal integrated
Hoyer Ingo +7 more
doaj +1 more source
Optoelectrical performance evolution of CMOS image sensors exposed to gamma radiation [PDF]
, 2009 In this paper we present a study of ionizing radiation effects, up to 5 kGy, in several CMOS image sensors manufactured using a commercial 0.18 μm technology dedicated to ...
Goiffon, Vincent +2 more
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