Results 51 to 60 of about 156,051 (256)
Custom transistor layout design techniques for random telegraph signal noise reduction in CMOS image sensors [PDF]
, 2010 Interface and near oxide traps in small gate area MOS transistors (gate area ,1 mm2) lead to RTS noise which implies the emergence of noisy pixels in CMOS image sensors.
P. Magnan +5 more
core +1 more source
Advanced Functional Materials, EarlyView.Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner +14 more
wiley +1 more source
Recent progress of oxide-TFT-based inverter technology
Journal of Information Display, 2021 Oxide semiconductor-based thin-film transistor (oxide-TFT) technology have gained significant attention since the innovation of n-channel oxide-TFT using ZnO and amorphous In–Ga–Zn–O (a-IGZO) channels because of their superior device properties including
Kenji Nomura
doaj +1 more source
Development of high-performances monolithic CMOS detectors for space applications [PDF]
, 2002 This paper describes the development of a 750x750 pixels CMOS image sensor for star tracker applications. A first demonstrator of such a star tracker called SSM star tracker built around a 512x512 detector has been recently developed and proves the ...
Franck Corbiere +17 more
core +1 more source
Advanced Functional Materials, EarlyView.In situ Auger Electron Spectroscopy resolves oxidation states with high fidelity during the pulsed laser deposition of multivalent perovskite manganate and vanadate heterostructures. The chemical‐state signature is carried by the valence‐electron population of the transition‐metal cation, read out through the relative intensities of Auger fine ...
Harish Kumarasubramanian +1 more
wiley +1 more source
Design of low-power D-flip-flop based on multithreshold technique(基于多阈值技术的低功耗D触发器设计)
Zhejiang Daxue xuebao. Lixue ban, 2005 目前CMOS电路中，漏电流功耗已经成为不可忽视的部分.降低电路漏电流功耗的一种有效方法是采用多阈值电路技术.根据多阈值电路设计原理，电路的关键路径采用低阈值晶体管，以保证电路的性能；非关键路径采用高阈值晶体管，以降低电路的漏电流功耗.对于触发器来说，其对时钟的响应部分是一个关键路径，而对信号的响应部分是非关键路径.本文据此设计了一种新型低功耗D触发器——多阈值与非门保持型D触发器.该电路结构简单，降低了电路漏电流功耗，并且当输入保持不变时，时钟信号不作用于内部结点，使内部结点电压保持不变 ...
ZHANGHui-xi(张慧熙) +2 more
doaj +1 more source
RTS noise impact in CMOS image sensors readout circuit [PDF]
, 2009 CMOS image sensors are nowadays widely used in imaging applications even for high end applications. This is really possible thanks to a reduction of noise obtained, among others, by Correlated Double Sampling (CDS) readout.
P. Magnan +3 more
core +1 more source
Spatially Modulated Morphotropic Phase Boundaries in a Compressively Strained Multiferroic Thin Film
Advanced Functional Materials, EarlyView.ABSTRACT The coexisting rhombohedral‐like (R′, MA) and tetragonal‐like (T′, MC) monoclinic phases in compressively strained bismuth ferrite thin films exhibit exceptional piezoelectric and magnetic properties. While previous studies have largely focused on probing the morphotropic phase boundaries (MPBs) comprising ordered R′/T′ twins, their self ...
Ting‐Ran Liu +7 more
wiley +1 more source
Repair Techniques for Hybrid Nano/CMOS Computational Architecture
, 2009 —Presence of high defect rate in nanofabrics due to the inadequate fabrication processes has held back the development of emerging technology architecture. In this work, we propose two repair techniques to provide high level of defect tolerance in lookup
Srivastava, Saket +2 more
core +1 more source
Miniaturized 0.13-μm CMOS Front-End Analog for AlN PMUT Arrays
Sensors, 2020 This paper presents an analog front-end transceiver for an ultrasound imaging system based on a high-voltage (HV) transmitter, a low-noise front-end amplifier (RX), and a complementary-metal-oxide-semiconductor, aluminum nitride, piezoelectric ...
Iván Zamora +3 more
doaj +1 more source