Results 51 to 60 of about 47,494 (264)

The ARTEMIS project: Mixed-Signal IC for Edge-AI-based Classification of ECG Signals

Current Directions in Biomedical Engineering, 2023
Atrial fibrillation (AF) is a common heart arrhythmia and is closely associated with causing strokes. Diagnosis is usually performed with Holter monitors over longer periods of time, causing discomfort to the patient. The proposed mixed-signal integrated
Hoyer Ingo, Roßman Özgü, Utz Alexander, Straczek Lukas, Akboyraz Onur, Hessel Sebastian, Lüdecke André, Seidl Karsten   +7 more
doaj   +1 more source

Self‐Powered, Ultra‐Sensitive InGaAs/ITO Nanowire Radial Junction Infrared Photodiode for Low Flux Imaging at Room Temperature

Advanced Functional Materials, EarlyView.
This study reports a self‐powered InGaAs nanowire photodetector achieving single‐photon‐level sensitivity in the shortwave infrared at non‐cryogenic temperatures. The device demonstrates high‐speed imaging capabilities even under extremely low‐flux conditions.
Kosala Dhanawansha, Chaohao Chen, Zhe Li, Tuomas Haggren, Dawei Liu, Yang Yu, Baolei Liu, Sanjay Krishna, Hark H. Tan, Chennupati Jagadish, Lan Fu   +10 more
wiley   +1 more source

Enabling Variability-Aware Design-Technology Co-Optimization for Advanced Memory Technologies

Journal of Microelectronic Manufacturing, 2020
This paper presents a TCAD-based methodology to enable Design-Technology Co-Optimization (DTCO) of advanced semiconductor memories. After reviewing the DTCO approach to semiconductor devices scaling, we introduce a multi-stage simulation flow to study ...
Salvatore M. Amoroso, Plamen Asenov, Jaehyun Lee, Nara Kim, Ko-Hsin Lee, Yaohua Tan, Yong-Seog Oh, Lee Smith, Xi-Wei Lin , Victor Moroz   +9 more
doaj   +1 more source

GeS as an Emerging OTS Material: Atomic Structure and Modeling of ON/OFF Switching

Advanced Functional Materials, EarlyView.
The structural puzzle of glassy GeS, an advanced memory‐selector material, has finally been disentangled, revealing a patchwork of mixed tetrahedral and trigonal species. Under a high electric field, over‐ and under‐coordinated Ge and S defects, together with three‐membered rings, form an interconnected network associated with localized and extended ...
Andrey Tverjanovich, Jörg C. Neuefeind, Chris J. Benmore, Daniele Fontanari, Anton Sokolov, Maxim Khomenko, Shinji Kohara, Aleksei Bytchkov, Takeshi Usuki, Maria Bokova, Mohammad Kassem, Pascal Masselin, Mariana Milochova, Eugene Bychkov   +13 more
wiley   +1 more source

Design of a 90 GHz SOI Fin Electro-Optic Modulator for High-Speed Applications

Applied Sciences, 2019
Introducing high speed networks, such as the fifth generation of mobile technology and related applications including the internet of things, creates a pressing demand for hardware infrastructure that provides sufficient bandwidth.
Hany Mahrous, Mostafa Fedawy, Mona El Sabbagh, W. Fikry, Michael Gad   +4 more
doaj   +1 more source

Neuromorphic Devices for Extreme Environments: State‐Variable Reliability and Stabilization Strategies

Advanced Functional Materials, EarlyView.
Neuromorphic devices for extreme environments are interpreted through the physical states that store and process information. Radiation, temperature extremes, and vacuum can perturb vacancies, filaments, trapped charges, polarization, interfaces, and readout signals.
Taehyun Park, Geon Park, Junhyung Cho, Jaechan Song, Wangmyung Choi, Jaehyun Hur, Nicola Gasparini, Hocheon Yoo   +7 more
wiley   +1 more source

Programming Neuromorphic Plasticity Through Ionic and Electronic Coupling in Organic Electrochemical Transistors

Advanced Functional Materials, EarlyView.
Neuromorphic plasticity in OECTs is governed by the post‐stimulus evolution of coupled ionic and electronic states. Semiconductor chemistry and morphology, electrolyte composition and interfaces, and device architecture regulate ion injection, transport, confinement, and release, shifting responses from rapidly relaxing STP to metastable memory and ...
Inho Lee, Hyoik Jang, Ji Hwan Kim, Jonghyun Won, Namhee Kim, Wonseok Shin, Giwon Lee, Eunho Lee, Daegun Kim, Sungjun Park   +9 more
wiley   +1 more source

Low Power-High Gain Bulk-Driven 3 Stages CMOS Miller OTA in 130nm Technology

Sakarya Üniversitesi Fen Bilimleri Enstitüsü Dergisi, 2020
The requirement of low-power analog circuits has been raised in recent years due to the strict limitation of power consumption in modern applications.
Engin Afacan
doaj   +1 more source

Low‐Flicker‐Noise MoS2 Transistors Enabled by High‐κ Rare‐Earth Oxychlorides for Mixed‐Signal Electronics

Advanced Functional Materials, EarlyView.
Single‐crystalline LaOCl and GdOCl form atomically abrupt, Cl‐terminated interfaces with MoS2, enabling near‐ideal switching and suppressed flicker noise. Carrier‐number‐fluctuation analysis yields effective noise‐derived interface trap densities of 1.15–1.94 × 1010 cm−2 eV−1, approaching hexagonal boron nitride levels with high‐κ coupling.
Chanho Lee, Changwoo Pyo, Seungchan Lee, Juho Son, Yoongi Cho, Jiho Shin, Sungmoon Park, Sungjin Kim, Changmin An, Heein Yoon, Myungsoo Kim   +10 more
wiley   +1 more source

Modulation of Surface‐Associated Transport in (Bi1‐xSbx)2Te3 via Battery‐ Inspired Solid‐State Iontronic Gating

Advanced Functional Materials, EarlyView.
Iontronic gating in a battery‐inspired device modulates the relative weight of surface‐associated and bulk‐like transport fingerprints in (Bi1‐xSbx)2Te3, resulting in phenomenological valve‐like transport behavior. The strongest WAL‐associated coherent transport signatures emerge near the transport‐defined carrier compensation regime at ultra‐low gate ...
Gabriel Vinicius de Oliveira Silva, Reza Asadi, He Ren, Rabiul Islam, Jagadeesh Moodera, Guo‐Xing Miao   +5 more
wiley   +1 more source