Results 61 to 70 of about 163,537 (317)

An Extended CMOS ISFET Model Incorporating the Physical Design Geometry and the Effects on Performance and Offset Variation [PDF]

, 2011
17/04/13 meb. Accepted version OK to pub.This paper presents an extended model for the CMOS-based Ion-Sensitive-Field-Effect-Transistor (ISFET), incorporating design parameters associated with the physical geometry of the device.
Liu, Y, Georgiou, Pantelis, Pantelis Georgiou, Timothy G. Constandinou, Prodromakis, T, Constandinou, TG, Georgiou, P, Themistoklis Prodromakis, Prodromakis, Themistoklis, Toumazou, Christofer, Liu, Yan, Yan Liu, Christofer Toumazou, Constandinou, Timothy G, Toumazou, C   +14 more
core   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

A Folded Cascode CMOS Low Noise Amplifier with Transformer Feedback [PDF]

Journal of Electromagnetic Engineering and Science
This study proposes a folded cascode CMOS low noise amplifier (LNA) with transformer feedback, implemented using a 0.13-μm CMOS process for wireless local area network front-end module applications.
Dongmyeong Kim, Haseon Song, Ilku Nam, Donggu Im   +3 more
doaj   +1 more source

New source of random telegraph signal in CMOS image sensors [PDF]

, 2012
We report a new source of dark current random telegraph signal in CMOS image sensors due to meta-stable Shockley-Read-Hall generation mechanism at oxide interfaces.
Goiffon, Vincent, Gaillardin, Marc, Virmontois, Cédric, Magnan, Pierre, Martin-Gonthier, Philippe   +4 more
core  

Displacement Damage Effects in Pinned Photodiode CMOS Image Sensors [PDF]

, 2012
This paper investigates the effects of displacement damage in Pinned Photodiode (PPD) CMOS Image Sensors (CIS) using proton and neutron irradiations. The DDD ranges from 12 TeV/g to ${1.2 times 10^{6}}$ TeV/g.
Bardoux, A., Goiffon, Vincent, Corbière, Franck, Bardoux, Alain, Virmontois, Cédric, Goiffon, V., Girard, Sylvain, Corbiere, F., Magnan, Pierre, Magnan, P.   +9 more
core   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

MEMS Technology in the Evolution of Structural Control Strategies [PDF]

E3S Web of Conferences
The integration of Micro-Electro-Mechanical Systems (MEMS) into structural control strategies represents a transformative step towards more efficient, precise, and resilient engineering applications.
Durga C.S.L. Vijaya, R J Anandhi, Singh Navdeep, S Ajeesh, Kumar Parashar Ashish, Hussein Laith, Praveen   +6 more
doaj   +1 more source

Miniaturized 0.13-μm CMOS Front-End Analog for AlN PMUT Arrays

Sensors, 2020
This paper presents an analog front-end transceiver for an ultrasound imaging system based on a high-voltage (HV) transmitter, a low-noise front-end amplifier (RX), and a complementary-metal-oxide-semiconductor, aluminum nitride, piezoelectric ...
Iván Zamora, Eyglis Ledesma, Arantxa Uranga, Núria Barniol   +3 more
doaj   +1 more source

Radiation Effects on CMOS Image Sensors With Sub-2 µm Pinned Photodiodes [PDF]

, 2012
CMOS image sensor hardness under irradiation is a key parameter for application fields such as space or medical. In this paper, four commercial sensors featuring different technological characteristics (pitch, isolation or buried oxide) have been ...
Place, Sébastien, Goiffon, Vincent, Roy, François, Carrere, Jean-Pierre, Magnan, Pierre, Allegret, Stephane   +5 more
core   +1 more source

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

Advanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu, Haksoon Jung, Yongwoo Lee, Hoichang Jeong, Yanfeng Zhao, Heesoo Yang, Minho Park, Hyeonjin Lee, Seunghun Baek, Minju Song, Junghwan Kim, Youngmin Jo, Hyunjin Park, Munhyeon Kim, Jae‐Joon Kim, Kyuho Jason Lee, Byungjo Kim, Jimin Kwon   +17 more
wiley   +1 more source