Results 61 to 70 of about 156,051 (256)

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

Advanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva   +13 more
wiley   +1 more source

Identification of radiation induced dark current sources in pinned photodiode CMOS image sensors [PDF]

, 2012
This paper presents an investigation of Total Ionizing Dose induced dark current sources in Pinned PhotoDiodes (PPD) CMOS Image Sensors based on pixel design variations. The influence of several layout parameters is studied. Only one parameter is changed
Goiffon, Vincent, Place, Sébastien, Gaillardin, Marc, Estribeau, Magali, Virmontois, Cédric, Girard, Sylvain, Magnan, P., Gaillardin, M., Martin-Gonthier, P., Cervantes, P., Paillet, Philippe, Cervantes, Paola, Magnan, Pierre, Martin-Gonthier, Philippe   +13 more
core   +1 more source

Electrode and Microstructure Dependence of Oxygen Diffusion in Ferroelectric Hafnium Zirconium Oxide Thin Films

Advanced Functional Materials, EarlyView.
Significant nanoscale oxygen diffusion coefficient variations are measured in ferroelectric hafnium zirconium oxide films with grain boundaries and electrode interfaces exhibiting values 104 times larger than the grain cores. Overall coefficients are 10X larger for films prepared with metal nitride electrodes compared to refractory metals. New insights
Liron Shvilberg, Thomas W. Pfeifer, Chuanzhen Zhou, Yong Kyu Choi, Duk‐Hyun Choe, Patrick E. Hopkins, Jon F. Ihlefeld   +6 more
wiley   +1 more source

Analysis and Optimization of Noise Response for Low-Noise CMOS Image Sensors [PDF]

, 2012
CMOS image sensors are nowadays widely used in imaging applications and particularly in low light flux applications. This is really possible thanks to a reduction of noise obtained, among others, by the use of pinned photodiode associated with a ...
Molina, Romain, P. Magnan, P. Martin-Gonthier, Cervantes, Paola, R. Molina, P. Cervantes, Magnan, Pierre, Martin-Gonthier, Philippe   +7 more
core   +1 more source

Historical Foundation and Practical Guideline for Ferroelectric Switching Kinetic Studies

Advanced Functional Materials, EarlyView.
The P and U pulses in the conventional PUND measurements are not identical because of the interplay between switching current and the measurement circuit components. This circuit effect can lead to a shift in polarization transients and misinterpreted physics in the switching kinetics.
Yi Liang, Pat Kezer, John T. Heron
wiley   +1 more source

Total ionizing dose versus displacement damage dose induced dark current random telegraph signals in CMOS image sensors [PDF]

, 2011
Dark current Random Telegraph Signals due to total ionizing dose (TID) and displacement damage dose (DDD) are investigated in CMOS image sensors.
A. Bardoux, Bardoux, A., V. Goiffon, Goiffon, Vincent, Bardoux, Alain, O. Saint-Pe, P. Magnan, Petit, S., Virmontois, Cédric, Saint-Pé, O., Girard, Sylvain, Magnan, P., Cedric Virmontois, Petit, Sophie, Rolland, Guy, S. Petit, Saint-Pé, Olivier, S. Girard, G. Rolland, Magnan, Pierre   +19 more
core   +1 more source

Monolithic Oxidation Enables Ultrathin Vertically Graded Tantalum Oxide for Low‐Voltage, Low‐Variability Memristive Switching

Advanced Functional Materials, EarlyView.
Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang, Dong Hyun Lee, Conan Weiland, Won‐Il Lee, Kim Kisslinger, Mingzhao Liu, Aswin kumar Anbalagan, Xiao Tong, Soumyajit Mandal, Nikhil Tiwale, Houk Jang, Chang‐Yong Nam   +11 more
wiley   +1 more source

Investigation of Temperature and Channel Dimension Effects on CMOS Circuit Performance

East European Journal of Physics
This paper presents the impact of temperature variations and alterations in transistor channel dimensions on CMOS (Complementary Metal-Oxide-Semiconductor) circuit technology.
Zitouni Messai, Abdelhalim Brahimi, Okba Saidani, Nacerdine Bourouba, Abderrahim Yousfi   +4 more
doaj   +1 more source

Europium-Doped Sol-Gel SiO2-Based Glasses: Effect of the Europium Source and Content, Magnesium Addition and Thermal Treatment on Their Photoluminescence Properties

Molecules, 2018
Rare-earth doped silica-based glasses lead the optical materials due to their tailorable spectroscopic and optical properties. In this context, we took advantage of the sol-gel process to prepare various Eu-doped silica glasses to study their luminescent
Hussein Fneich, Nathalie Gaumer, Stéphane Chaussedent, Wilfried Blanc, Ahmad Mehdi   +4 more
doaj   +1 more source

The ARTEMIS project: Mixed-Signal IC for Edge-AI-based Classification of ECG Signals

Current Directions in Biomedical Engineering, 2023
Atrial fibrillation (AF) is a common heart arrhythmia and is closely associated with causing strokes. Diagnosis is usually performed with Holter monitors over longer periods of time, causing discomfort to the patient. The proposed mixed-signal integrated
Hoyer Ingo, Roßman Özgü, Utz Alexander, Straczek Lukas, Akboyraz Onur, Hessel Sebastian, Lüdecke André, Seidl Karsten   +7 more
doaj   +1 more source