Results 41 to 50 of about 156,051 (256)

A novel approach for designing of variability aware low-power logic gates

ETRI Journal, 2022
Metal-oxide-semiconductor field-effect transistors (MOSFETs) are continuously scaling down in the nanoscale region to improve the functionality of integrated circuits.
Vijay Kumar Sharma
doaj   +1 more source

Feasibility of Ge CMOS for Beyond Si-CMOS [PDF]

ECS Meeting Abstracts, 2010
Abstract not Available.
Akira Toriumi, Choong Hyun Lee, Tomonori Nishimura, Koji Kita, Shengkai Wang, Mahoro Yoshida, Kosuke Nagashio   +6 more
openaire   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

JEDAN: Joint Euclidean Distance and Autoencoder Network for Robust Out-of-Distribution Detection in Radar-Based Hand Gesture Recognition

IEEE Access
Detecting Out-of-Distribution (OOD) gestures is vital for reliable radar-based gesture-recognition systems. Traditional autoencoders often fall short in OOD detection because they prioritize minimizing reconstruction error over forming distinct clusters ...
Muhammad Ghufran Janjua, Kevin Kaiser, Thomas Stadelmayer, Stephan Schoenfeldt, Vadim Issakov   +4 more
doaj   +1 more source

Design of an integrated circuit with buried double junction photodiodes for optical immunoassays

Revista Elektrón, 2020
Optical immunoassays require measurement systems capable of distinguishing the light from the laser source, used to illuminate the assay, from the light generated by the particles contained within the assay itself (fluorescence).
Juan Pablo Goyret, Segundo Molina Abeniacar   +1 more
doaj   +1 more source

Control of Polarization and Polar Helicity in BiFeO3 by Epitaxial Strain and Interfacial Chemistry

Advanced Functional Materials, EarlyView.
In BiFeO3 thin films, the interplay of interfacial chemistry, electrostatics, and epitaxial strain is engineered to stabilize homohelicity in polarization textures at the domain scale. The synergistic use of a Bi2O2‐terminated Aurivillius buffer layer and a highly anisotropic compressive epitaxial strain offers new routes to control the polar‐texture ...
Elzbieta Gradauskaite, Lilia Huynh, Natascha Gray, Quintin N. Meier, Marta D. Rossell, Morgan Trassin   +5 more
wiley   +1 more source

Microwave Imaging for Breast Cancer Detection - A Comparison Between VNA and FMCW Radar

IEEE Journal of Microwaves
This paper presents the comparison between microwave imaging for breast cancer detection using a vector network analyzer (VNA) and a frequency-modulated continuous wave (FMCW) radar system.
Martin Maier, Sebastian Paul, Milan Rother, Simona Di Meo, Marco Pasian, Joerg Schoebel, Vadim Issakov   +6 more
doaj   +1 more source

Ionizing radiation effects on CMOS imagers manufactured in deep submicron process [PDF]

, 2008
We present here a study on both CMOS sensors and elementary structures (photodiodes and in-pixel MOSFETs) manufactured in a deep submicron process dedicated to imaging.
Olivier Saint-Pé, Goiffon, Vincent, Nicolas Huger, Frédéric Bernard, Guy Rolland, Bernard, Frédéric, Pierre Magnan, Huger, Nicolas, Corbière, Franck, Rolland, Guy, Saint-Pé, Olivier, Vincent Goiffon, Franck Corbière, Magnan, Pierre   +13 more
core   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

A D-Band Hybrid-Type CMOS Phase Shifter with Full 360° Phase Coverage [PDF]

Journal of Electromagnetic Engineering and Science
This paper presents a D-band phase shifter fabricated using 65-nm CMOS technology that provides continuous full 360° phase shift. To achieve moderate insertion loss with low DC power, a hybrid-type topology is adopted by combining a 180° reflection-type ...
Eunjung Kim, Sanggeun Jeon
doaj   +1 more source