Results 31 to 40 of about 311,577 (303)
CMOS OTA-C high-frequency sinusoidal oscillators [PDF]
, 1991 Several topology families are given to implement practical CMOS sinusoidal oscillators by using operational transconductance amplifier-capacitor (OTA-C) techniques. Design techniques are proposed taking into account the CMOS OTA's dominant nonidealities.
Huertas Díaz, José Luis +3 more
core +1 more source
HeliyonIn this work, we introduce an enhanced Finite Volume Method (FVM) designed for the quasi-electrostatic analysis of microfluidic devices in the frequency domain.
Milan Rother +2 more
doaj +1 more source
A D-Band Hybrid-Type CMOS Phase Shifter with Full 360° Phase Coverage [PDF]
Journal of Electromagnetic Engineering and ScienceThis paper presents a D-band phase shifter fabricated using 65-nm CMOS technology that provides continuous full 360° phase shift. To achieve moderate insertion loss with low DC power, a hybrid-type topology is adopted by combining a 180° reflection-type ...
Eunjung Kim, Sanggeun Jeon
doaj +1 more source
Automotive 3.0 µm Pixel High Dynamic Range Sensor with LED Flicker Mitigation
Sensors, 2020 We present and discuss parameters of a high dynamic range (HDR) image sensor with LED flicker mitigation (LFM) operating in automotive temperature range.
Minseok Oh +13 more
doaj +1 more source
Design of Adiabatic MTJ-CMOS Hybrid Circuits
, 2017 Low-power designs are a necessity with the increasing demand of portable devices which are battery operated. In many of such devices the operational speed is not as important as battery life.
Badawy, Abdel-Hameed +2 more
core +1 more source
Built-In Self-Test of Millimeter-Wave Integrated Front-End Circuits: How Far Have We Come?
IEEE AccessWith automotive radar and 5G/6G communications, mass-market applications for millimeter-wave circuits in silicon technologies have been identified or established in recent years.
Yannick Wenger +2 more
doaj +1 more source
CMOS-3D smart imager architectures for feature detection [PDF]
, 2012 This paper reports a multi-layered smart image sensor architecture for feature extraction based on detection of interest points. The architecture is conceived for 3-D integrated circuit technologies consisting of two layers (tiers) plus memory.
D. Cabello +6 more
core +1 more source
Design of low-power D-flip-flop based on multithreshold technique(基于多阈值技术的低功耗D触发器设计)
Zhejiang Daxue xuebao. Lixue ban, 2005 目前CMOS电路中，漏电流功耗已经成为不可忽视的部分.降低电路漏电流功耗的一种有效方法是采用多阈值电路技术.根据多阈值电路设计原理，电路的关键路径采用低阈值晶体管，以保证电路的性能；非关键路径采用高阈值晶体管，以降低电路的漏电流功耗.对于触发器来说，其对时钟的响应部分是一个关键路径，而对信号的响应部分是非关键路径.本文据此设计了一种新型低功耗D触发器——多阈值与非门保持型D触发器.该电路结构简单，降低了电路漏电流功耗，并且当输入保持不变时，时钟信号不作用于内部结点，使内部结点电压保持不变 ...
ZHANGHui-xi(张慧熙) +2 more
doaj +1 more source
FULLY OPTIMIZED ULTRA WIDEBAND RF RECEIVER FRONT END
Jordanian Journal of Computers and Information Technology, 2022 This paper proposes a novel and fully optimized Ultra-wideband rf receiver front end in UMC 180nm 1P6M CMOS process. The heterodyne architecture used in this work does not use the on-chip image reject mixer.
Rajesh Khatri, D. K. Mishra
doaj +1 more source
Overview of CMOS process and design options for image sensor dedicated to space applications [PDF]
, 2005 With the growth of huge volume markets (mobile phones, digital cameras…) CMOS technologies for image sensor improve significantly. New process flows appear in order to optimize some parameters such as quantum efficiency, dark current, and conversion gain.
Corbière, Franck +2 more
core +1 more source