Results 31 to 40 of about 47,494 (264)

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source

Feasibility of Ge CMOS for Beyond Si-CMOS [PDF]

ECS Meeting Abstracts, 2010
Abstract not Available.
Akira Toriumi, Choong Hyun Lee, Tomonori Nishimura, Koji Kita, Shengkai Wang, Mahoro Yoshida, Kosuke Nagashio   +6 more
openaire   +1 more source

JEDAN: Joint Euclidean Distance and Autoencoder Network for Robust Out-of-Distribution Detection in Radar-Based Hand Gesture Recognition

IEEE Access
Detecting Out-of-Distribution (OOD) gestures is vital for reliable radar-based gesture-recognition systems. Traditional autoencoders often fall short in OOD detection because they prioritize minimizing reconstruction error over forming distinct clusters ...
Muhammad Ghufran Janjua, Kevin Kaiser, Thomas Stadelmayer, Stephan Schoenfeldt, Vadim Issakov   +4 more
doaj   +1 more source

Design of an integrated circuit with buried double junction photodiodes for optical immunoassays

Revista Elektrón, 2020
Optical immunoassays require measurement systems capable of distinguishing the light from the laser source, used to illuminate the assay, from the light generated by the particles contained within the assay itself (fluorescence).
Juan Pablo Goyret, Segundo Molina Abeniacar   +1 more
doaj   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Microwave Imaging for Breast Cancer Detection - A Comparison Between VNA and FMCW Radar

IEEE Journal of Microwaves
This paper presents the comparison between microwave imaging for breast cancer detection using a vector network analyzer (VNA) and a frequency-modulated continuous wave (FMCW) radar system.
Martin Maier, Sebastian Paul, Milan Rother, Simona Di Meo, Marco Pasian, Joerg Schoebel, Vadim Issakov   +6 more
doaj   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

A D-Band Hybrid-Type CMOS Phase Shifter with Full 360° Phase Coverage [PDF]

Journal of Electromagnetic Engineering and Science
This paper presents a D-band phase shifter fabricated using 65-nm CMOS technology that provides continuous full 360° phase shift. To achieve moderate insertion loss with low DC power, a hybrid-type topology is adopted by combining a 180° reflection-type ...
Eunjung Kim, Sanggeun Jeon
doaj   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

Advanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva   +13 more
wiley   +1 more source

Recent progress of oxide-TFT-based inverter technology

Journal of Information Display, 2021
Oxide semiconductor-based thin-film transistor (oxide-TFT) technology have gained significant attention since the innovation of n-channel oxide-TFT using ZnO and amorphous In–Ga–Zn–O (a-IGZO) channels because of their superior device properties including
Kenji Nomura
doaj   +1 more source