Results 31 to 40 of about 163,537 (317)

A D-Band Hybrid-Type CMOS Phase Shifter with Full 360° Phase Coverage [PDF]

open access: yesJournal of Electromagnetic Engineering and Science
This paper presents a D-band phase shifter fabricated using 65-nm CMOS technology that provides continuous full 360° phase shift. To achieve moderate insertion loss with low DC power, a hybrid-type topology is adopted by combining a 180° reflection-type ...
Eunjung Kim, Sanggeun Jeon
doaj   +1 more source

Automotive 3.0 µm Pixel High Dynamic Range Sensor with LED Flicker Mitigation

open access: yesSensors, 2020
We present and discuss parameters of a high dynamic range (HDR) image sensor with LED flicker mitigation (LFM) operating in automotive temperature range.
Minseok Oh   +13 more
doaj   +1 more source

Defect Tolerance in Hybrid nano/CMOS Architecture using Tagging Mechanism [PDF]

open access: yes, 2009
In this paper we propose two efficient repair techniques for hybrid nano/CMOS architecture to provide high level of defect tolerance at a modest cost.We have applied the proposed techniques to a lookup table(LUT) based Boolean logic approach.
Srivastava, Saket   +5 more
core   +1 more source

Built-In Self-Test of Millimeter-Wave Integrated Front-End Circuits: How Far Have We Come?

open access: yesIEEE Access
With automotive radar and 5G/6G communications, mass-market applications for millimeter-wave circuits in silicon technologies have been identified or established in recent years.
Yannick Wenger   +2 more
doaj   +1 more source

Total ionizing dose versus displacement damage dose induced dark current random telegraph signals in CMOS image sensors [PDF]

open access: yes, 2011
Dark current Random Telegraph Signals due to total ionizing dose (TID) and displacement damage dose (DDD) are investigated in CMOS image sensors.
A. Bardoux   +19 more
core   +1 more source

Design of low-power D-flip-flop based on multithreshold technique(基于多阈值技术的低功耗D触发器设计)

open access: yesZhejiang Daxue xuebao. Lixue ban, 2005
目前CMOS电路中,漏电流功耗已经成为不可忽视的部分.降低电路漏电流功耗的一种有效方法是采用多阈值电路技术.根据多阈值电路设计原理,电路的关键路径采用低阈值晶体管,以保证电路的性能;非关键路径采用高阈值晶体管,以降低电路的漏电流功耗.对于触发器来说,其对时钟的响应部分是一个关键路径,而对信号的响应部分是非关键路径.本文据此设计了一种新型低功耗D触发器——多阈值与非门保持型D触发器.该电路结构简单,降低了电路漏电流功耗,并且当输入保持不变时,时钟信号不作用于内部结点,使内部结点电压保持不变 ...
ZHANGHui-xi(张慧熙)   +2 more
doaj   +1 more source

Estimation and Modeling of the Full Well Capacity in Pinned Photodiode CMOS Image Sensors [PDF]

open access: yes, 2013
This letter presents a simple analytical model for the evaluation of the full well capacity (FWC) of pinned photodiode (PPD) CMOS image sensors depending on the operating conditions and on the pixel parameters.
Pelamatti, Alice   +4 more
core   +1 more source

FULLY OPTIMIZED ULTRA WIDEBAND RF RECEIVER FRONT END

open access: yesJordanian Journal of Computers and Information Technology, 2022
This paper proposes a novel and fully optimized Ultra-wideband rf receiver front end in UMC 180nm 1P6M CMOS process. The heterodyne architecture used in this work does not use the on-chip image reject mixer.
Rajesh Khatri, D. K. Mishra
doaj   +1 more source

Effect of terahertz irradiation on DNA damage repair in living cells

open access: yesFEBS Open Bio, EarlyView.
We investigated the effect of terahertz (THz) wave irradiation on DNA double‐strand break (DSB) repair in living cells. We found that THz irradiation enhanced DSB repair at specific frequencies, whereas heat treatment inhibited it, indicating that this effect is nonthermal and frequency‐specific.
Yuya Ueno   +3 more
wiley   +1 more source

Compact modelling in RF CMOS technology [PDF]

open access: yes, 2011
With the continuous downscaling of complementary metal-oxide-semiconductor (CMOS) technology, the RF performance of metal-oxide-semiconductor field transistors (MOSFETs) has considerably improved over the past years.
Liu, Jun
core  

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