Results 161 to 170 of about 389,945 (331)

High Photoluminescence Quantum Yield and Tunable Luminescence Lifetimes in the Sub‐Second Range of CaS:Eu2+ Phosphors for Tracer Based Sorting

open access: yesAdvanced Materials Technologies, EarlyView.
Efficient plastic waste sorting is crucial for circularity. Advanced methods using lanthanide photonic tracers enhance recycling beyond near‐infrared sorting. Europium(II)‐doped phosphors, with high stability and long luminescence decay, improve tracer detection in sorting systems, enabling precise identification of different plastic materials ...
Arzu Cosgun Ergene   +5 more
wiley   +1 more source

Silicon‐Integrated Next‐Generation Plasmonic Devices for Energy‐Efficient Semiconductor Applications

open access: yesAdvanced Materials Technologies, EarlyView.
Silicon (Si)‐integrated plasmonics offer a pathway to next‐generation, energy‐efficient semiconductor applications. This review highlights advances using complementary metal–oxide–semiconductor (CMOS)‐compatible materials like transparent conductive oxides and novel architectures, particularly coupled hybrid plasmonic waveguides (CHPWs).
Nasir Alfaraj, Amr S. Helmy
wiley   +1 more source

Highly Reliable Hf1‐XZrXO2 with Ultra‐Low Operation Voltage (< 1 V) Enabled by Stoichiometric Control of Tungsten Oxide Interfacial Layer

open access: yesAdvanced Materials Technologies, EarlyView.
This study investigates the impact of the oxidation state of the WOX interfacial layer (IL) on its conductance and the associated voltage drop, aiming to mitigate fatigue and imprint in HZO‐based devices. As a result, through scaling the ferroelectric layer and engineering ILs, reduced wake‐up, functional operation exceeding 1011 cycles, and data ...
Mostafa Habibi   +9 more
wiley   +1 more source

Highly Efficient n‐Type Doped Single‐Crystalline Perylene Diimide Microwires via Solution Processing for High‐Performance Photosensors and Photo‐Neuromorphic Devices

open access: yesAdvanced Materials Technologies, EarlyView.
Solution‐processed high‐performance n‐type doped single‐crystalline organic semiconductor microwires (MWs) are reported. n‐Type dopants are located at the terrace edge of the MW, resulting in rapid doping and high interaction. n‐doped MWs show 5,000 times enhanced photosensitivity than evaporated films and high photo‐neuromorphic characteristics by ...
Yonghee Kim   +5 more
wiley   +1 more source

Relationship between IBICC imaging and SEU in CMOS ICs [PDF]

open access: green, 1993
F.W. Sexton   +6 more
openalex   +1 more source

One Dimensional Metal Oxide Semiconductor Nanotransistors

open access: yesAdvanced Materials Technologies, EarlyView.
This review assesses one dimensional metal oxide NW‐FETs as promising alternatives to conventional transistors. It explores how advances in architecture, material composition, and fabrication processes expand device capabilities. Emphasis is placed on novel gate configurations, different metal oxide nanowires, and post‐treatment methods, which ...
Mariana D. Cortinhal   +2 more
wiley   +1 more source

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