A High Gain, Noise Cancelling 3.1-10.6 GHz CMOS LNA for UWB Application
Xiaorong Zhao +6 more
openalex +1 more source
Ion‐Reconfigurable “N”‐Shaped Antiambipolar Behavior in Organic Electrochemical Transistors
A unique N‐shaped negative differential transconductance (NDT) characteristics is demonstrated in single‐polymer organic electrochemical transistors through a sequential doping–redox–doping process driven by iodide ions. This redox‐driven mechanism enables low‐voltage, ion‐controlled reconfigurability and tunable current modulation, allowing seamless ...
Debdatta Panigrahi +11 more
wiley +1 more source
Decoupling Dynamics and Crosslink Stability in Supramolecular Hydrogels Using Associative Exchange
How does reorganization impact the stability of supramolecular hydrogels? In contrast to dissociative crosslink exchange, implementing associative exchange in macroscale DNA hydrogels enables decoupling of reorganization dynamics from thermal and mechanical stability.
Pierre Le Bourdonnec +4 more
wiley +1 more source
Comparison of adenoma detection rate using the novel 5-LED vs xenon-light endoscopic system: Propensity score matching analysis. [PDF]
Ito T +13 more
europepmc +1 more source
Ferroelectrics Hybrids: Harnessing Multifunctionality of 2D Semiconductors in the Post‐Moore Era
In this Review, the state of art of ferroelectric hybrid systems—combining ferroelectrics, 2D semiconductors, and molecular switches is presented—as next‐generation platforms for high‐density, multifunctional electronics. By discussing 2D FeFET applications, nanoscale material downscaling, M3D integration, and emerging ferroelectrics, it highlights ...
Haixin Qiu +3 more
wiley +1 more source
Ultra-low-cost, high-dynamic-range, additively manufactured CMOS spectrometers with UV, visible, and NIR sensing functionality [PDF]
Kondo Hironori
doaj +1 more source
Self-Rectifying Memristors for Beyond-CMOS Computing: Mechanisms, Materials, and Integration Prospects. [PDF]
Zhang G +10 more
europepmc +1 more source
Ultrathin Monatomic Antimony Films by Sacrificial Atomic Layer Deposition for Phase Change Memory
A three‐step sacrificial atomic layer deposition (s‐ALD) process enables wafer‐scale growth of ultrathin and uniform antimony (Sb) thin films. An ultrathin (≈4 nm) Sb film is uniformly deposited with its characteristic bilayer structure (Sb‐Sb) aligned along the substrate.
Gwangsik Jeon +9 more
wiley +1 more source
Sub-THz communication systems: pushing the capabilities of silicon. [PDF]
Gruber J +6 more
europepmc +1 more source
Gate-workfunction engineering using poly-(Si,Ge) for high-performance 0.18 μm CMOS technology
Y.V. Ponomarev +5 more
openalex +2 more sources

