Results 171 to 180 of about 407,225 (353)

A High Gain, Noise Cancelling 3.1-10.6 GHz CMOS LNA for UWB Application

open access: diamond, 2019
Xiaorong Zhao   +6 more
openalex   +1 more source

Ion‐Reconfigurable “N”‐Shaped Antiambipolar Behavior in Organic Electrochemical Transistors

open access: yesAdvanced Materials, EarlyView.
A unique N‐shaped negative differential transconductance (NDT) characteristics is demonstrated in single‐polymer organic electrochemical transistors through a sequential doping–redox–doping process driven by iodide ions. This redox‐driven mechanism enables low‐voltage, ion‐controlled reconfigurability and tunable current modulation, allowing seamless ...
Debdatta Panigrahi   +11 more
wiley   +1 more source

Decoupling Dynamics and Crosslink Stability in Supramolecular Hydrogels Using Associative Exchange

open access: yesAdvanced Materials, EarlyView.
How does reorganization impact the stability of supramolecular hydrogels? In contrast to dissociative crosslink exchange, implementing associative exchange in macroscale DNA hydrogels enables decoupling of reorganization dynamics from thermal and mechanical stability.
Pierre Le Bourdonnec   +4 more
wiley   +1 more source

Comparison of adenoma detection rate using the novel 5-LED vs xenon-light endoscopic system: Propensity score matching analysis. [PDF]

open access: yesEndosc Int Open
Ito T   +13 more
europepmc   +1 more source

Ferroelectrics Hybrids: Harnessing Multifunctionality of 2D Semiconductors in the Post‐Moore Era

open access: yesAdvanced Materials, EarlyView.
In this Review, the state of art of ferroelectric hybrid systems—combining ferroelectrics, 2D semiconductors, and molecular switches is presented—as next‐generation platforms for high‐density, multifunctional electronics. By discussing 2D FeFET applications, nanoscale material downscaling, M3D integration, and emerging ferroelectrics, it highlights ...
Haixin Qiu   +3 more
wiley   +1 more source

Self-Rectifying Memristors for Beyond-CMOS Computing: Mechanisms, Materials, and Integration Prospects. [PDF]

open access: yesNanomicro Lett
Zhang G   +10 more
europepmc   +1 more source

Ultrathin Monatomic Antimony Films by Sacrificial Atomic Layer Deposition for Phase Change Memory

open access: yesAdvanced Materials, EarlyView.
A three‐step sacrificial atomic layer deposition (s‐ALD) process enables wafer‐scale growth of ultrathin and uniform antimony (Sb) thin films. An ultrathin (≈4 nm) Sb film is uniformly deposited with its characteristic bilayer structure (Sb‐Sb) aligned along the substrate.
Gwangsik Jeon   +9 more
wiley   +1 more source

Sub-THz communication systems: pushing the capabilities of silicon. [PDF]

open access: yesCommun Eng
Gruber J   +6 more
europepmc   +1 more source

Gate-workfunction engineering using poly-(Si,Ge) for high-performance 0.18 μm CMOS technology

open access: green, 2002
Y.V. Ponomarev   +5 more
openalex   +2 more sources

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