Results 171 to 180 of about 385,801 (356)
Advanced Optical Materials, Volume 13, Issue 8, March 13, 2025.This article presents a hybrid metal‐dielectric metasurface in transmission mode for mid‐infrared (MIR) spectroscopy. Composed of germanium on aluminium cylinders atop a calcium fluoride substrate, the metasurface achieves 80% transmission efficiency at λ = 2.6 µm with a narrow full‐width‐half‐maximum of 0.4 µm.
Amr Soliman +5 more
wiley +1 more source
A 4-μW 0.8-V Rail-to-Rail Input/Output CMOS Fully Differential OpAmp
, 1970 M. R. Valero, S. Celma, N. Medrano
openalex +2 more sources
Advanced Optical Materials, Volume 13, Issue 8, March 13, 2025.Correlative super‐resolution optical imaging of the ultrastructure of rat liver sinusoidal endothelial cells (LSECs) across a large field of view (FOV) with 3D structured illumination microscopy (3D‐SIM) and single‐molecule localization microscopy (SMLM), facilitated by a transparent polymer photonic waveguide chip, is presented.
Surjendu Bikash Dutta +9 more
wiley +1 more source
High-temperature complementary metal oxide semiconductors (CMOS)
, 1979 J. D. McBrayer
openalex +2 more sources
Advanced Optical Materials, EarlyView.Demonstration of an electro‐optic phase shifter fabricated by inkjet printing liquid crystal on an integrated silicon photonics chip surface. On a completed silicon photonics wafer (including modulators, detectors, and metallization), the back‐end‐of‐line stack is opened up to inkjet‐print liquid crystal. A phase shift of 6 for 2.7 V is obtained within
Lukas Van Iseghem +10 more
wiley +1 more source
Photolithography-Compatible Three-Terminal Superconducting Switch for Driving CMOS Loads [PDF]
arXivSuperconducting devices have enabled breakthrough performance in quantum sensing and ultra-low-power computing applications. However, the need for a cryo-electronics platform that can interface superconducting electronics with Complementary Metal-Oxide-Semiconductor (CMOS) devices has become increasingly evident in many cutting-edge applications.
arxiv
CHARACTERISATION OF NARROW-SPACED ISOLATION IN A TWIN RETROGRADE WELL SUBMICRON CMOS PROCESS [PDF]
, 1988 P.A. van der Plas +2 more
openalex +1 more source
Demonstration of a Graphene Adjustable‐Barriers Phototransistor with Tunable Ultra‐High Responsivity
Advanced Optical Materials, EarlyView.A novel graphene‐based phototransistor with a tunable ultra‐high responsivity of 1.7 x 107 AW−1 has been demonstrated. Due to the selected material combination of amorphous silicon, graphene and n‐germanium, the device is potentially capable of dual‐band detection in the VIS‐IR range.
Carsten Strobel +5 more
wiley +1 more source
HIGHER EFFICIENCY OF CMOS-PROCESS-COMPATIBLE PHOTODIODES IN SOI-TECHNIQUE BY REFLECTING FILMS [PDF]
, 1988 K. Knospe, K. Goser
openalex +1 more source
Energy Focusing Metasurface Based Wireless Power Transfer System for Compact Unmanned Mobilities
Advanced Optical Materials, EarlyView.A miniaturized wireless power transfer system integrates a metasurface lens, microstrip patch antenna, and RF‐CMOS rectifier to enhance mmWave reception efficiency and reduce size. Leveraging mmWave short wavelengths, it achieves high gain on small platforms. The system's polarization independence and wide‐angle reception ensure robust performance.
Wonwoo Lee +7 more
wiley +1 more source