Results 261 to 270 of about 163,537 (317)
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Mitigating defective CMOS to Non-CMOS vias in CMOS/Molecular memories
10th IEEE International Conference on Nanotechnology, 2010CMOS/Molecular (CMOL) memory is one of the emerging memory technologies that promises increased data storage, reduced power consumption and minimized fabrication complexity. The fabrication of these memories is based on the stacking of non-CMOS-based memory cell array on the top of CMOS-based peripheral circuits.
Nor Zaidi Haron, Said Hamdioui
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Alternative CMOS or alternative to CMOS?
Microelectronics Reliability, 2001Abstract We point out the main issues to address in order to investigate and push the limits of CMOS technology. The demand for low voltage, low power and high performance are the great challenges for engineering of sub-0.10 μm gate length devices. The possible solutions are reviewed through the issues in gate/channel and substrate, source and drain ...
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A CMOS fuse for safe release of CMOS-MEMS devices
2017 IEEE SENSORS, 2017This paper reports a safe release mechanism for MEMS devices fabricated using plasma etching based dry processes. The proposed smart fuse is particularly designed for CMOS-MEMS devices where inherent CMOS thin films are used as structural materials. Properly designed polysilicon heater sandwiched between CMOS layers is the critical element of the fuse.
Peng Qu, Hongwei Qu
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Lab-on-CMOS: Integrating microfluidics and electrochemical sensor on CMOS
2011 6th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, 2011This paper introduces an integration process capable of merging an electrochemical CMOS chip with a microfluidic structure to bring the performance benefits of on-CMOS sensors to lab-on-chip platforms. This new approach embeds a CMOS die into a carrier chip and provides a planar surface that supports complex microfluidic channels beyond the dimensions ...
Yue Huang, Andrew J. Mason
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Nanoelectronics devices: More CMOS, fusion CMOS and beyond CMOS
2009 IEEE Asian Solid-State Circuits Conference, 2009We are facing several difficulties with shrinking LSI chips, such as leakage currents/power consumption, variability, huge costs in R&D and production. Major semiconductor market will be absolutely dependent on further shrinking of Si CMOS transistors with improving transistor structures and lowering drive voltage, increasing wafer diameter and 3D ...
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CMOS is dead … long live CMOS!
2007 IEEE Hot Chips 19 Symposium (HCS), 2007This article consists of a collection of slides from the author's conference presentation on the future of CMOS technologies. Some of the specific topics discussed include: the market for CMOS scaling; design considerations for materials plus CMOS scaling; the future that considers devices plus materials plus CMOS scaling; and new areas of future chip ...
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IEEE Journal of Solid-State Circuits, 1998
A robust CMOS compander circuit meeting all of the requirements for analog cellular telephony and using an improved sigma-delta compander topology is presented. Rather than digitizing and reconstructing the input signal using a sigma-delta modulator as has been done previously, only the amplitude path is digitized while the voice path remains analog ...
David M. Hossack, John I. Sewell
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A robust CMOS compander circuit meeting all of the requirements for analog cellular telephony and using an improved sigma-delta compander topology is presented. Rather than digitizing and reconstructing the input signal using a sigma-delta modulator as has been done previously, only the amplitude path is digitized while the voice path remains analog ...
David M. Hossack, John I. Sewell
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IEEE Journal of Solid-State Circuits, 2005
A direct-conversion ultra-wideband (UWB) transceiver for Mode 1 OFDM applications employs three resonant networks and three phase-locked loops. Using a common-gate input stage, the receiver allows direct sharing of the antenna with the transmitter. Designed in 0.13-/spl mu/m CMOS technology, the transceiver provides a total gain of 69-73 dB and a noise
Behzad Razavi +8 more
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A direct-conversion ultra-wideband (UWB) transceiver for Mode 1 OFDM applications employs three resonant networks and three phase-locked loops. Using a common-gate input stage, the receiver allows direct sharing of the antenna with the transmitter. Designed in 0.13-/spl mu/m CMOS technology, the transceiver provides a total gain of 69-73 dB and a noise
Behzad Razavi +8 more
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Implementation of CMOS oscillator for CMOS SAW resonator
2016 Symposium on Design, Test, Integration and Packaging of MEMS/MOEMS (DTIP), 2016This work presents a design and measurement of pierce oscillator circuit for microelectromechanical system (MEMS) SAW resonator. The pierce oscillator circuit was fabricated using MIMOS 0.35um CMOS technology process. The pierce oscillator circuit provides gain to offset the losses of the resonator.
Jamilah Karim, Anis Nurashikin Nordin S.
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