Results 11 to 20 of about 557 (199)

Digitally Programmable Analogue Circuits for Sensor Conditioning Systems

open access: yesSensors, 2009
This work presents two current-mode integrated circuits designed for sensor signal preprocessing in embedded systems. The proposed circuits have been designed to provide good signal transfer and fulfill their function, while minimizing the load effects ...
Santiago Celma   +5 more
doaj   +1 more source

A Single-Chip CMOS Pulse Oximeter with On-Chip Lock-In Detection

open access: yesSensors, 2015
Pulse oximetry is a noninvasive and continuous method for monitoring the blood oxygen saturation level. This paper presents the design and testing of a single-chip pulse oximeter fabricated in a 0.35 µm CMOS process.
Diwei He   +8 more
doaj   +1 more source

High‐speed, two‐stage operational transconductance amplifier without Miller capacitor, suitable for large capacitive load

open access: yesThe Journal of Engineering
A two‐stage Class A‐AB operational transconductance amplifier with low power consumption, high slew rate, and high bandwidth is introduced for handling large capacitive loads. Unlike the conventional two‐stage operational transconductance amplifiers that
Mohammad Rashtian   +2 more
doaj   +1 more source

Generation of equivalent forms of operational trans-conductance amplifier-RC sinusoidal oscillators: the nullor approach

open access: yesThe Journal of Engineering, 2014
It has been shown in two earlier papers published from this study that corresponding to a given single-operational trans-conductance amplifier (single-OTA)-RC and dual-OTA-RC sinusoidal oscillators, there are three other structurally distinct equivalent ...
Raj Senani   +3 more
doaj   +1 more source

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

open access: yesAdvanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner   +14 more
wiley   +1 more source

A push–pull FVF LDO with full‐spectrum PSR and fast transient response

open access: yesElectronics Letters
A push–pull low‐dropout regulator based on flipped voltage follower is proposed and designed in 65 nm CMOS, which has a push‐current mode and a pull‐current one.
Heng Zheng   +4 more
doaj   +1 more source

Potential of carbon nanotube field effect transistors for analogue circuits

open access: yesThe Journal of Engineering, 2013
This Letter presents a detailed comparison of carbon nanotube field effect transistors (CNFETs) and metal oxide semiconductor field effect transistors (MOSFETs) with special focus on carbon nanotube FET's potential for implementing analogue circuits in ...
Khizar Hayat   +2 more
doaj   +1 more source

Historical Foundation and Practical Guideline for Ferroelectric Switching Kinetic Studies

open access: yesAdvanced Functional Materials, EarlyView.
The P and U pulses in the conventional PUND measurements are not identical because of the interplay between switching current and the measurement circuit components. This circuit effect can lead to a shift in polarization transients and misinterpreted physics in the switching kinetics.
Yi Liang, Pat Kezer, John T. Heron
wiley   +1 more source

Effects of proton irradiation on 60 GHz CMOS transceiver chip for multi-Gbps communication in high-energy physics experiments

open access: yesThe Journal of Engineering, 2019
This article presents the experimental results of 17 MeV proton irradiation on a 60 GHz low power, half-duplex transceiver (TRX) chip implemented in 65 nm CMOS technology.
Imran Aziz   +22 more
doaj   +1 more source

Monolithic Oxidation Enables Ultrathin Vertically Graded Tantalum Oxide for Low‐Voltage, Low‐Variability Memristive Switching

open access: yesAdvanced Functional Materials, EarlyView.
Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang   +11 more
wiley   +1 more source

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