Comprehensive Comparison of Front- and Back-Illuminated Single-Photon Avalanche Diodes in 110 nm Standard CMOS Image Sensor Technology. [PDF]
Eom D +6 more
europepmc +1 more source
A 3.0 Gsymbol/s/lane MIPI C-PHY Receiver with Adaptive Level-Dependent Equalizer for Mobile CMOS Image Sensor. [PDF]
Choi S, Song C, Jang YC.
europepmc +1 more source
A Unified Flash Memory Platform for Mode‐Adaptive and Robust AI Computation
A unified AND‐type flash memory platform enables both transistor‐mode and capacitor‐mode computing‐in‐memory operations within the same device structure. By selectively switching the sensing mode through peripheral reconfiguration, the platform provides adaptable trade‐offs between computational accuracy, robustness, and energy efficiency for AI ...
Dayeon Yu +6 more
wiley +1 more source
A Phosphorylation‐Induced Micellization Switch in the Low‐Complexity Domain of TDP‐43
Phosphorylation of TAR DNA‐binding protein's 43 kDa (TDP‐43) low‐complexity domain by casein kinase 1 delta (CK1δ) acts as a molecular switch, redirecting its self‐assembly from macroscopic phase separation toward finite‐sized, spherical block‐copolymer micelles of ∼30 nm.
Rodrigo F. Dillenburg +16 more
wiley +1 more source
Advancements in Active-Pixel-Type CMOS Image Sensor Design Techniques and Architectures for Wide Dynamic Range. [PDF]
Sim S, Jun J.
europepmc +1 more source
Structural Colors from Modulated Topological Defects in Molecular Smectic Liquid Crystals
Rather than using dyes and pigments, nature produces the colors of some butterflies and beetles through optical interference phenomena. This study describes an original biomimetic strategy exploiting the spontaneous formation of modulated linear defects in thin films of 8CB, a common molecular liquid crystal.
Camille N. Mahyaoui +7 more
wiley +1 more source
A Subsampling Phase-Locked Loop with a Dual Charge Pump Based on Capacitor Multipliers for CMOS Image Sensor. [PDF]
Lin Y +8 more
europepmc +1 more source
HfO2‐based ferroelectrics exhibit wake‐up and fatigue behaviors during electrical cycling, significantly affecting device endurance and reliability. These phenomena are governed by defect dynamics, including oxygen vacancy redistribution and charge trapping.
Hongseok Kim +6 more
wiley +1 more source
NbOx Mott Memristor‐Based Oscillatory P‐trit for Ternary Potts Machine
A ternary Potts machine utilizing NbOx‐based probabilistic trits (p‐trits) is demonstrated for efficient combinatorial optimization. By leveraging the electro‐thermal switching dynamics of NbOx memristors, this architecture generates three‐state stochastic fluctuations.
Hakseung Rhee +10 more
wiley +1 more source
A 1000 fps High-Dynamic-Range Global Shutter CMOS Image Sensor with Full Thermometer Code Current-Steering Ramp. [PDF]
Han L +15 more
europepmc +1 more source

