Results 1 to 10 of about 801,069 (309)
Dark Current Noise Correction Method Based on Dark Pixels for LWIR QWIP Detection Systems
Applied Sciences, 2022 The long-wave infrared (LWIR) quantum-well photodetector (QWIP) operates at low temperatures, but is prone to focal plane temperature changes when imaging in complex thermal environments.
Haoting Du +4 more
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On the Origin of Dark Current in Organic Photodiodes [PDF]
Advanced Optical Materials, 2019 AbstractMinimizing the reverse bias dark current while retaining external quantum efficiency is crucial if the light detection sensitivity of organic photodiodes (OPDs) is to compete with inorganic photodetectors. However, a quantitative relationship between the magnitude of the dark current density under reverse bias ( Jd) and the properties of the ...
Giulio Simone +6 more
openaire +2 more sources
IEEE Open Journal of the Communications Society, 2021 Optical beam center position on an array of detectors is an important parameter that is essential for estimating the angle-of-arrival of the incoming signal beam.
Muhammad Salman Bashir +2 more
doaj +1 more source
Sensors, 2023 The application of TiO2 nanorods in the field of ultraviolet (UV) photodetectors is hindered by a high dark current, which is attributed to crystal surface defects and intrinsic excitation by carrier thermal diffusion.
Yupeng Zhang +7 more
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Fully Depleted, Trench-Pinned Photo Gate for CMOS Image Sensor Applications
Sensors, 2020 Tackling issues of implantation-caused defects and contamination, this paper presents a new complementary metal−oxide−semiconductor (CMOS) image sensor (CIS) pixel design concept based on a native epitaxial layer for photon detection, charge ...
Francois Roy +10 more
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Applied Sciences, 2022 In this paper, we report on temperature dependence performances of a midwave infrared (MWIR) Ga-free InAs/InAsSb type-II superlattice (T2SL) barrier (XBn) photodetector grown by molecular beam epitaxy on n-type GaSb substrate.
Maxime Bouschet +6 more
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“GeSn Rule-23”—The Performance Limit of GeSn Infrared Photodiodes
Sensors, 2023 Group-IV GeSn photodetectors (PDs) compatible with standard complementary metal–oxide-semiconductor (CMOS) processing have emerged as a new and non-toxic infrared detection technology to enable a wide range of infrared applications.
Guo-En Chang, Shui-Qing Yu, Greg Sun
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Temperature Sensors Integrated into a CMOS Image Sensor
Proceedings, 2017 In this work, a novel approach is presented for measuring relative temperature variations inside the pixel array of a CMOS image sensor itself. This approach can give important information when compensation for dark (current) fixed pattern noise (FPN) is
Accel Abarca +3 more
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Applied Sciences, 2023 The performance of long-wave infrared (LWIR) quantum well (QWIP) detection systems is seriously affected by the dark current of the detectors. Tiny variations in the focal-plane temperature of the devices cause fluctuations in the dark current, which in ...
Haoting Du +6 more
doaj +1 more source
Defects formation on the surface of Si-substrates during thermal sputtering of gold
Технологія та конструювання в електронній апаратурі, 2023 Silicon photodetectors, in particular p–i–n photodiodes, are widely used as sensors of optical radiation. With technological advances, the requirements for the parameters and reliability of these elements of solid-state electronics are increasing sharply,
Mykola Kukurudziak +1 more
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