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Reduction in Dark Current in Photodiodes: A Review [PDF]

open access: yesMicromachines
Dark current represents a fundamental limiting factor in photodiode performance, establishing the noise floor and constraining detectivity in low-light applications.
Alper Ülkü   +7 more
doaj   +2 more sources

Preliminary investigation on performance of photodiode sensor as a dosimeter

open access: yesBiomedical Photonics, 2021
Radiation dosimetry in the health and medicine field is crucial to ensure there is no unnecessary ionizing radiation exposure to patients and personnel.
Y. Md Radzi, N. Zulkafli, A. Omar
doaj   +1 more source

Silicon four element p-i-n photodiode with improved characteristics

open access: yesРадіоелектронні і комп'ютерні системи, 2023
This article presents the results of the development of silicon coordinate p-i-n photodiodes (PD) with improved parameters. The technological possibilities of reducing the gaps between the responsive areas of multi-element PDs were studied.
Mykola Kukurudziak
doaj   +1 more source

Developing a Portable Spectrometer to Detect Chemical Contaminants in Irrigation Water

open access: yesAgriculture, 2023
Water pollution is a critical issue since it can severely affect health and the environment. The purpose of the study is to develop a portable spectrometer (ESP32-based spectrometer) to detect chemical contaminants in irrigation water by observing the ...
Siti Nadhirah Zainurin   +4 more
doaj   +1 more source

Model and algorithm of creation of silicon photodiod with high sensitivity in the middle infrared area of the spectrum

open access: yesРадіоелектронні і комп'ютерні системи, 2022
The sensitivity of the photodiode will depend on the amount of radiation power that it must register. The characteristics of a photodiode, as is known, are determined by its design.
Yuri Dobrovolsky, Yurii Sorokatyi
doaj   +1 more source

A Silicon Carbide 256 Pixel UV Image Sensor Array Operating at 400 °C

open access: yesIEEE Journal of the Electron Devices Society, 2020
An image sensor based on wide band gap silicon carbide (SiC) has the merits of high temperature operation and ultraviolet (UV) detection. To realize a SiC-based image sensor the challenge of opto-electronic on-chip integration of SiC photodetectors and ...
Shuoben Hou   +5 more
doaj   +1 more source

Single-Point Detection Architecture via Liquid Crystal Modulation for Hyperspectral Imaging Systems

open access: yesIEEE Access, 2020
Hyperspectral imaging (HSI) architectures can acquire one-dimension of spatial information and one-dimension of spectral information on a two-dimensional image sensor for an image, such as in the traditional line-scan HSI architecture.
C. Harrison Brodie   +1 more
doaj   +1 more source

The Effect of Bias and Frequency on Amplitude to Phase Conversion of Photodiodes

open access: yesIEEE Photonics Journal, 2020
Fluctuation of the optical power incident on a photodiode will cause phase variation of the electrical signal. This phenomenon is known as amplitude-to-phase (AM-to-PM) conversion. The effects of bias voltage and test frequency on AM-to-PM conversion are
Jiazheng Sun   +4 more
doaj   +1 more source

Silicon p-i-n photodiode with increased pulse sensitivity

open access: yesTekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2021
P-n junction semiconductor photodetectors are widely used in various fields of science and technology, including automation and telecontrol, instrumentation equipment, tracking systems, guidance, etc. The most demanded photoelectronic devices are silicon
Mykola Kukurudziak, Yuriy Dobrovolsky
doaj   +1 more source

Performance evaluation of a new 30 μm thick GaAs x-ray detector grown by MBE

open access: yesMaterials Research Express, 2021
A circular mesa (400 μm diameter) GaAs p ^+ -i-n ^+ photodiode with a 30 μm thick i layer was characterized for its performance as a detector in photon counting x-ray spectroscopy at 20 °C.
G Lioliou   +5 more
doaj   +1 more source

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