Exciton-polariton photodiodes. [PDF]
Nat CommunPhotodiodes are central to high-speed communication, sensing and light-harvesting devices. While silicon and other inorganic semiconductor-based photodiodes have been widely integrated into commercial technologies, photodiodes from excitonic semiconductors continue to maintain high interest in research. Excitonic semiconductors are superior in terms of
Zhao Q +10 more
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Rad Tolerant CMOS Image Sensor Based on Hole Collection 4T Pixel Pinned Photodiode [PDF]
, 2012 1.4μm pixel pitch CMOS Image sensors based on hole collection pinned photodiode (HPD) have been irradiated with 60Co source. The HPD sensors exhibit much lower dark current degradation than equivalent commercial sensors using an Electron collection ...
Allegret, Stephane +5 more
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Ionization versus displacement damage effects in proton irradiated CMOS sensors manufactured in deep submicron process [PDF]
, 2009 Proton irradiation effects have been studied on CMOS image sensors manufactured in a 0.18 μm technology dedicated to imaging. The ionizing dose and displacement damage effects were discriminated and localized thanks to 60Co irradiations and large ...
Bernard, Frédéric +4 more
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High-speed GaAlAs/GaAs p-i-n photodiode on a semi-insulating GaAs substrate [PDF]
, 1983 A high-speed, high-responsivity GaAlAs/GaAs p-i-n photodiode has been fabricated on a GaAs semi-insulating substrate. The 75-µm-diam photodiode has a 3-dB bandwidth of 2.5 GHz and responsivity of 0.45 A/W at 8400 Å (external quantum efficiency of 65 ...
Bar-Chaim, N. +3 more
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Radiation Effects in Pinned Photodiode CMOS Image Sensors: Pixel Performance Degradation Due to Total Ionizing Dose [PDF]
, 2012 Several Pinned Photodiode (PPD) CMOS Image Sensors (CIS) are designed, manufactured, characterized and exposed biased to ionizing radiation up to 10 kGy(SiO2 ).
Cervantes, Paola +12 more
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A liquid-helium cooled large-area silicon PIN photodiode x-ray detector [PDF]
, 1995 An x-ray detector using a liquid-helium cooled large-area silicon PIN photodiode has been developed along with a tailor-made charge sensitive preamplifier whose first-stage JFET has been cooled.
Fumio Shimokoshi +13 more
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Physical and electrical bandwidths of integrated photodiodes in standard CMOS technology [PDF]
, 2003 The influence of different geometries (layouts) and structures of high-speed photodiodes in fully standard 0.18 μm CMOS technology on their intrinsic (physical) and electrical bandwidths is analyzed.
Annema, Anne Johan +2 more
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Gallium Aluminum Arsenide/Gallium Arsenide Integrated Optical Repeater [PDF]
, 1984 A low threshold buried heterostructure laser, a metal-semiconductor field effect transistor (MESFET), and a photodiode, have for the first time, been monolithically integrated on a semi-insulating GaAs substrate.
Bar-Chaim, N. +3 more
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Integrated Photodiodes in Standard CMOS Technology for CD and DVD Applications [PDF]
, 2004 The influence of two different geometries (layouts) and two structures of high-speed photodiodes in fully standard 0.18 /spl mu/m CMOS technology on their intrinsic (physical) and electrical bandwidths is analyzed.
Annema, Anne-Johan +2 more
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Generic radiation hardened photodiode layouts for deep submicron CMOS image sensor processes [PDF]
, 2011 Selected radiation hardened photodiode layouts, manufactured in a deep submicron CMOS Image Sensor technology, are irradiated by 60Co gamma-rays up to 2.2 Mrad(SiO2) and studied in order to identify the most efficient structures and the guidelines ...
Cervantes, Paola +5 more
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