Results 41 to 50 of about 44,940 (168)
Photodiode based on GaP sensitized to short-wave region of UV spectrum
An algorithm for the simulation and analysis of the parameters that determine the sensitivity of the photodiode surface-barrier structures based on n+–n-GaP–SnO2(F) has been developed.
Yu. G. Dobrovol’skii
doaj
Feasibility of Photosynthetically Active Radiation (PAR) Measurement Using LED and Photodiode
Photosynthetically Active Radiation (PAR) is measured by high costs commercial PAR sensors.The feasibility of economical PAR measurements became crucial since sensing numerous data instantaneously has great importance of making right decisions for ...
Barış Uzun, Vedat Demir
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Proposal for superconducting photodiode
Abstract We propose a concept of a superconducting (SC) photodiode—a device that transforms the energy and ‘spin’ of an external electromagnetic (EM) field into the rectified steady-state supercurrent and develop a microscopic theory describing its properties.
A V Parafilo +4 more
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Superlattice avalanche photodiodes
Summary form only given. InGaAsP-InAlAs superlattice avalanche photodiode (SL-APD) is applied to the receiver of the analog video transmission as well as to the high-bit-rate digital transmission. The low noise, wide bandwidth, low distortion, and wide dynamic range characteristics of the SL-APD are fully exploited in the video transmission system. All
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4H-SiC 64 pixels CMOS image sensors with 3T/4T-APS arrays
For radiation-hardened CMOS image sensors (CIS), 4H-SiC 64 pixel array CIS were developed, and real time imaging with an operation frequency of 30 Hz was demonstrated.
Tatsuya Meguro +5 more
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Photodiodes are central to high-speed communication, sensing and light-harvesting devices. While silicon and other inorganic semiconductor-based photodiodes have been widely integrated into commercial technologies, photodiodes from excitonic semiconductors continue to maintain high interest in research. Excitonic semiconductors are superior in terms of
Qixiao Zhao +10 more
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Scaling and Modeling of High Temperature 4H-SiC p-i-n Photodiodes
4H-SiC p-i-n photodiodes with various mesa areas (40 000 μm2, 2500 μm2, 1600 μm2, and 400 μm2) have been fabricated. Both C-V and I-V characteristics of the photodiodes have been measured at room temperature, 200 °C ...
Shuoben Hou +3 more
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The metrology group of radiometric and pyrometric measurements of INSAT include among others the development of detectors that will be used as a standard in the MMA Laboratory for optical radiation measurements in the visible and infrared spectral range.
Ben Achour Zahra +2 more
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The enumeration of cellular proliferation by covering from hemocytometer to flow cytometer is an important procedure in the study of cancer development. For example, hemocytometer has been popularly employed to perform manual cell counting.
Kyoungrae Cho +3 more
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Comparative Analysis of the Selected Photoreceiver Input Stages in Terms of Noise
Semiconductor radiation detectors usually use a specific signal conditioning circuit, ensuring the required detection system parameters. This paper details the noise properties of specific input stages in photoreceivers that detect various types of ...
Krzysztof Achtenberg, Zbigniew Bielecki
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