Results 31 to 40 of about 45,121 (264)
Silicon p-i-n Mesa-Photodiode Technology
The paper proposes the technology of silicon p-i-n mesa-photodiodes, which allows to exclude one high-temperature operation from the technological route.
Mykola S. Kukurudziak +2 more
doaj +1 more source
Titanium-Based Metasurfaces for Optoelectronics
We report on the fabrication method that enables the development of transparent conductive metasurfaces capable of the resonant absorption of light in specific frequency bands.
Stella Kavokina +8 more
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Volt-Ampere Characteristics of Hetero Film Photosensitive Structure Au-CdS-nSi-CdTe-Au
The results of studies of the current-voltage characteristics of a photodiode heterostructure are presented. Au-nCdS-nSi-pCdTe-Au, in forward and reverse directions.
Sharifa B. Utamuradova +5 more
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Design and Fabrication of High Performance InGaAs near Infrared Photodetector
InGaAs photodiodes have a wide range of important applications; for example, NIR imaging, fiber optical communication, and spectroscopy. In this paper, we studied InGaAs photodiodes with different doping concentration absorber layers.
Hezhuang Liu +5 more
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High-Speed and Broadband InGaAs/InP Photodiode with InGaAsP Graded Bandgap Layers
This study presents the development of a high-speed, broadband InGaAs/InP photodiode suitable for advanced sensing and optical detection applications across the critical wavelength range of 850–1550 nm.
Guohao Yang +4 more
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We report the design of a 112 Gb/s radiation-hardened (RH) optical transceiver applicable to intra-satellite optical interconnects. The transceiver chipset comprises a vertical-cavity surface-emitting laser (VCSEL) driver and transimpedance amplifier ...
Stavros Giannakopoulos +17 more
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Sb-Based Low-Noise Avalanche Photodiodes
Accurate detection of weak optical signals is a key function for a wide range of applications. A key performance parameter is the receiver signal-to-noise ratio, which depends on the noise of the photodetector and the following electrical circuitry.
Joe C. Campbell +2 more
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Deep‐UV (258 nm) femtosecond pulses enable uniform amorphous silicon writing on Si(100)/(111) with a six‐fold larger fluence amorphization window than NIR methods. Optimized fluence and overlap yield 20–45 nm uniform and continuous amorphous layers. Microscopy shows sharp interfaces, and real‐time reflectivity reveals nanosecond melt–resolidification ...
Wissal Benali +5 more
wiley +1 more source
Magnesium‐Based Transient Bioelectronics, Bio‐Optics and Bio‐Scaffolds
This paper reviews the state of the art and recent advances in magnesium‐based thin‐film, foils, and scaffolds for applications in transient bio‐optics, bioelectronics and tissue engineering. The design principles, fabrication methods, material properties, and integration strategies are discussed in detail.
Massimo Mariello, Yves Leterrier
wiley +1 more source
Symmetric two-coordinate photodiode [PDF]
The two-coordinate photodiode is developed and explored on the longitudinal photoeffect, which allows to get the coordinate descriptions symmetric on the steepness and longitudinal resistance great exactness.
Dobrovolskiy Yu. G. +3 more
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