Results 21 to 30 of about 67,272 (298)
Silicon p-i-n photodiode with increased pulse sensitivity
P-n junction semiconductor photodetectors are widely used in various fields of science and technology, including automation and telecontrol, instrumentation equipment, tracking systems, guidance, etc. The most demanded photoelectronic devices are silicon
Mykola Kukurudziak, Yuriy Dobrovolsky
doaj +1 more source
Rad Tolerant CMOS Image Sensor Based on Hole Collection 4T Pixel Pinned Photodiode [PDF]
1.4μm pixel pitch CMOS Image sensors based on hole collection pinned photodiode (HPD) have been irradiated with 60Co source. The HPD sensors exhibit much lower dark current degradation than equivalent commercial sensors using an Electron collection ...
Place, Sébastien +5 more
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Performance evaluation of a new 30 μm thick GaAs x-ray detector grown by MBE
A circular mesa (400 μm diameter) GaAs p ^+ -i-n ^+ photodiode with a 30 μm thick i layer was characterized for its performance as a detector in photon counting x-ray spectroscopy at 20 °C.
G Lioliou +5 more
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Generic radiation hardened photodiode layouts for deep submicron CMOS image sensor processes [PDF]
Selected radiation hardened photodiode layouts, manufactured in a deep submicron CMOS Image Sensor technology, are irradiated by 60Co gamma-rays up to 2.2 Mrad(SiO2) and studied in order to identify the most efficient structures and the guidelines ...
V. Goiffon +11 more
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Displacement Damage Effects in Pinned Photodiode CMOS Image Sensors [PDF]
This paper investigates the effects of displacement damage in Pinned Photodiode (PPD) CMOS Image Sensors (CIS) using proton and neutron irradiations. The DDD ranges from 12 TeV/g to ${1.2 times 10^{6}}$ TeV/g.
Bardoux, A. +9 more
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This work presents a general and introductory review of visible light communication. Visible light communication or VLC refers to wireless communications using a spectral range from 380 to 780 nm for the transmission of information.
Juan Felipe Gutiérrez +1 more
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Identification of radiation induced dark current sources in pinned photodiode CMOS image sensors [PDF]
This paper presents an investigation of Total Ionizing Dose induced dark current sources in Pinned PhotoDiodes (PPD) CMOS Image Sensors based on pixel design variations. The influence of several layout parameters is studied. Only one parameter is changed
Goiffon, Vincent +13 more
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This is a line follower robot is a robot designed to assist humans in activities such as throw away trash in the shopping center. On robot sensors added a line that consists of photodiode and LED.
Yurni Oktarina +2 more
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Preliminary investigation on performance of photodiode sensor as a dosimeter
Radiation dosimetry in the health and medicine field is crucial to ensure there is no unnecessary ionizing radiation exposure to patients and personnel.
Y. Md Radzi, N. Zulkafli, A. Omar
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Simulation of CMOS APS Operation and Crosstalk in SPICE With Generalized Devices
We present SPICE simulations of a CMOS APS pixel element consisting of the optical sensor with the sensing circuit. The photodiode is simulated at the physics level by means of the so-called Generalized Devices, without any predefined compact model ...
Chiara Rossi, Jean-Michel Sallese
doaj +1 more source

