Results 11 to 20 of about 67,272 (298)

Bootstrapping techniques to improve the bandwidth of transimpedance amplifiers. [PDF]

open access: yes, 1998
Transimpedance amplifiers using voltage feedback operational amplifiers are widely used for current to voltage conversion in applications when a moderate/high bandwidth and a high sensitivity are required, such as photodiodes, photomultipliers, electron ...
Hoyle, C., Peyton, A. J.
core   +5 more sources

Development of CMOS active pixel sensors [PDF]

open access: yes, 2008
This thesis was submitted for the degree of Doctor of Philosophy and awarded by Brunel University.This thesis describes an investigation into the suitability of complementary metal oxide semiconductor (CMOS) active pixel sensor (APS) devices for ...
Greig, Thomas Alexander
core   +7 more sources

Silicon four element p-i-n photodiode with improved characteristics

open access: yesРадіоелектронні і комп'ютерні системи, 2023
This article presents the results of the development of silicon coordinate p-i-n photodiodes (PD) with improved parameters. The technological possibilities of reducing the gaps between the responsive areas of multi-element PDs were studied.
Mykola Kukurudziak
doaj   +1 more source

Developing a Portable Spectrometer to Detect Chemical Contaminants in Irrigation Water

open access: yesAgriculture, 2023
Water pollution is a critical issue since it can severely affect health and the environment. The purpose of the study is to develop a portable spectrometer (ESP32-based spectrometer) to detect chemical contaminants in irrigation water by observing the ...
Siti Nadhirah Zainurin   +4 more
doaj   +1 more source

Model and algorithm of creation of silicon photodiod with high sensitivity in the middle infrared area of the spectrum

open access: yesРадіоелектронні і комп'ютерні системи, 2022
The sensitivity of the photodiode will depend on the amount of radiation power that it must register. The characteristics of a photodiode, as is known, are determined by its design.
Yuri Dobrovolsky, Yurii Sorokatyi
doaj   +1 more source

A Silicon Carbide 256 Pixel UV Image Sensor Array Operating at 400 °C

open access: yesIEEE Journal of the Electron Devices Society, 2020
An image sensor based on wide band gap silicon carbide (SiC) has the merits of high temperature operation and ultraviolet (UV) detection. To realize a SiC-based image sensor the challenge of opto-electronic on-chip integration of SiC photodetectors and ...
Shuoben Hou   +5 more
doaj   +1 more source

Scalable MoS<sub>2</sub>/Si Photodiode Arrays From Roll-to-Roll Mechanical Exfoliation. [PDF]

open access: yesAdv Sci (Weinh)
A dry roll‐to‐roll route transforms mechanically exfoliated MoS2 flake networks into silicon‐integrated photodiode arrays. The MoS2/Si junctions generate photovoltaic output without applied bias, allowing illuminated pixels to locate light spots and reconstruct simple images.
Sozen Y, Pucher T, Castellanos-Gomez A.
europepmc   +2 more sources

Single-Point Detection Architecture via Liquid Crystal Modulation for Hyperspectral Imaging Systems

open access: yesIEEE Access, 2020
Hyperspectral imaging (HSI) architectures can acquire one-dimension of spatial information and one-dimension of spectral information on a two-dimensional image sensor for an image, such as in the traditional line-scan HSI architecture.
C. Harrison Brodie   +1 more
doaj   +1 more source

The Effect of Bias and Frequency on Amplitude to Phase Conversion of Photodiodes

open access: yesIEEE Photonics Journal, 2020
Fluctuation of the optical power incident on a photodiode will cause phase variation of the electrical signal. This phenomenon is known as amplitude-to-phase (AM-to-PM) conversion. The effects of bias voltage and test frequency on AM-to-PM conversion are
Jiazheng Sun   +4 more
doaj   +1 more source

Radiation Effects in Pinned Photodiode CMOS Image Sensors: Pixel Performance Degradation Due to Total Ionizing Dose [PDF]

open access: yes, 2012
Several Pinned Photodiode (PPD) CMOS Image Sensors (CIS) are designed, manufactured, characterized and exposed biased to ionizing radiation up to 10 kGy(SiO2 ).
Goiffon, Vincent   +20 more
core   +1 more source

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