Results 21 to 30 of about 8,495,694 (247)

Identification of radiation induced dark current sources in pinned photodiode CMOS image sensors [PDF]

, 2012
This paper presents an investigation of Total Ionizing Dose induced dark current sources in Pinned PhotoDiodes (PPD) CMOS Image Sensors based on pixel design variations. The influence of several layout parameters is studied. Only one parameter is changed
Goiffon, Vincent, Place, Sébastien, Gaillardin, Marc, Estribeau, Magali, Virmontois, Cédric, Girard, Sylvain, Magnan, P., Gaillardin, M., Martin-Gonthier, P., Cervantes, P., Paillet, Philippe, Cervantes, Paola, Magnan, Pierre, Martin-Gonthier, Philippe   +13 more
core   +1 more source

Defects formation on the surface of Si-substrates during thermal sputtering of gold

Технологія та конструювання в електронній апаратурі, 2023
Silicon photodetectors, in particular p–i–n photodiodes, are widely used as sensors of optical radiation. With technological advances, the requirements for the parameters and reliability of these elements of solid-state electronics are increasing sharply,
Mykola Kukurudziak, Anastasiya Kukurudziak   +1 more
doaj   +1 more source

Sensitivity projections for a dual-phase argon TPC optimized for light dark matter searches through the ionization channel

, 2023
Dark matter lighter than 10 GeV=c2 encompasses a promising range of candidates. A conceptual design for a new detector, DarkSide-LowMass, is presented, based on the DarkSide-50 detector and progress toward DarkSide-20k, optimized for a low-threshold ...
G. Paternoster, A. Gola, Global Argon Dark Matter Collaboration   +2 more
core   +1 more source

Total ionizing dose versus displacement damage dose induced dark current random telegraph signals in CMOS image sensors [PDF]

, 2011
Dark current Random Telegraph Signals due to total ionizing dose (TID) and displacement damage dose (DDD) are investigated in CMOS image sensors.
A. Bardoux, Bardoux, A., V. Goiffon, Goiffon, Vincent, Bardoux, Alain, O. Saint-Pe, P. Magnan, Petit, S., Virmontois, Cédric, Saint-Pé, O., Girard, Sylvain, Magnan, P., Cedric Virmontois, Petit, Sophie, Rolland, Guy, S. Petit, Saint-Pé, Olivier, S. Girard, G. Rolland, Magnan, Pierre   +19 more
core   +1 more source

Displacement Damage Effects in Pinned Photodiode CMOS Image Sensors [PDF]

, 2012
This paper investigates the effects of displacement damage in Pinned Photodiode (PPD) CMOS Image Sensors (CIS) using proton and neutron irradiations. The DDD ranges from 12 TeV/g to ${1.2 times 10^{6}}$ TeV/g.
Bardoux, A., Goiffon, Vincent, Corbière, Franck, Bardoux, Alain, Virmontois, Cédric, Goiffon, V., Girard, Sylvain, Corbiere, F., Magnan, Pierre, Magnan, P.   +9 more
core   +1 more source

Reduction of Uncorrelated Striping Noise—Applications for Hyperspectral Pushbroom Acquisitions

Remote Sensing, 2014
Hyperspectral images are of increasing importance in remote sensing applications. Imaging spectrometers provide semi-continuous spectra that can be used for physics based surface cover material identification and quantification.
Christian Rogass, Christian Mielke, Daniel Scheffler, Nina K. Boesche, Angela Lausch, Christin Lubitz, Maximilian Brell, Daniel Spengler, Andreas Eisele, Karl Segl, Luis Guanter   +10 more
doaj   +1 more source

A Physics-Based Analytical Model for Current–Voltage Characteristics of Perovskite Solar Cells Incorporating Bulk Recombination

Energies, 2021
A physics-based compact analytical model for studying the current–voltage characteristics of perovskite solar cells has been proposed by considering the external voltage-dependent carrier transport, exponential photon absorption, and bulk charge carrier ...
M. Zahangir Kabir
doaj   +1 more source

Design and Fabrication of High Performance InGaAs near Infrared Photodetector

Nanomaterials, 2023
InGaAs photodiodes have a wide range of important applications; for example, NIR imaging, fiber optical communication, and spectroscopy. In this paper, we studied InGaAs photodiodes with different doping concentration absorber layers.
Hezhuang Liu, Jingyi Wang, Daqian Guo, Kai Shen, Baile Chen, Jiang Wu   +5 more
doaj   +1 more source

Tuille Aire [PDF]

, 2023
This is the author accepted manuscript.
Moore, K
core  

Research of dynamic characteristics of Si-photodiodes in the region of small currents using a computerized measuring complex

Технологія та конструювання в електронній апаратурі
Studying the current-voltage characteristics (IVC) of photodiodes, as well as any other device with a p–n junction, allows us to determine their quality and compliance with the stated requirements for reverse dark current. However, in the development and
Oleg Kshevetskyi, Yuriy Dobrovolsky, Rostyslav Diachuk   +2 more
doaj   +1 more source