Results 11 to 20 of about 2,457,234 (292)
Dark Current Noise Correction Method Based on Dark Pixels for LWIR QWIP Detection Systems
Applied Sciences, 2022 The long-wave infrared (LWIR) quantum-well photodetector (QWIP) operates at low temperatures, but is prone to focal plane temperature changes when imaging in complex thermal environments.
Haoting Du +4 more
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Photostability Improvement of Organic Photodiodes with ZnO Electron Transport Layer
Advanced Photonics Research, 2023 The stable performance of organic photodiodes (OPDs) is crucial for realizing reliable photosensing and their facile integration into larger systems. However, OPDs with the commonly used ZnO electron transport layer (ETL) suffer from photoinstability ...
Theodorus Jonathan Wijaya +5 more
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IEEE Open Journal of the Communications Society, 2021 Optical beam center position on an array of detectors is an important parameter that is essential for estimating the angle-of-arrival of the incoming signal beam.
Muhammad Salman Bashir +2 more
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Sensors, 2023 The application of TiO2 nanorods in the field of ultraviolet (UV) photodetectors is hindered by a high dark current, which is attributed to crystal surface defects and intrinsic excitation by carrier thermal diffusion.
Yupeng Zhang +7 more
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Fully Depleted, Trench-Pinned Photo Gate for CMOS Image Sensor Applications
Sensors, 2020 Tackling issues of implantation-caused defects and contamination, this paper presents a new complementary metal−oxide−semiconductor (CMOS) image sensor (CIS) pixel design concept based on a native epitaxial layer for photon detection, charge ...
Francois Roy +10 more
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Applied Sciences, 2022 In this paper, we report on temperature dependence performances of a midwave infrared (MWIR) Ga-free InAs/InAsSb type-II superlattice (T2SL) barrier (XBn) photodetector grown by molecular beam epitaxy on n-type GaSb substrate.
Maxime Bouschet +6 more
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“GeSn Rule-23”—The Performance Limit of GeSn Infrared Photodiodes
Sensors, 2023 Group-IV GeSn photodetectors (PDs) compatible with standard complementary metal–oxide-semiconductor (CMOS) processing have emerged as a new and non-toxic infrared detection technology to enable a wide range of infrared applications.
Guo-En Chang, Shui-Qing Yu, Greg Sun
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Applied Sciences, 2023 The performance of long-wave infrared (LWIR) quantum well (QWIP) detection systems is seriously affected by the dark current of the detectors. Tiny variations in the focal-plane temperature of the devices cause fluctuations in the dark current, which in ...
Haoting Du +6 more
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Displacement damage effects due to neutron and proton irradiations on CMOS image sensors manufactured in deep submicron technology [PDF]
, 2010 Displacement damage effects due to proton and neutron irradiations of CMOS image sensors dedicated to imaging are presented through the analysis of the dark current behavior in pixel arrays and isolated photodiodes. The mean dark current increase and the
Girard, Sylvain +7 more
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Temperature Sensors Integrated into a CMOS Image Sensor
Proceedings, 2017 In this work, a novel approach is presented for measuring relative temperature variations inside the pixel array of a CMOS image sensor itself. This approach can give important information when compensation for dark (current) fixed pattern noise (FPN) is
Accel Abarca +3 more
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