Results 11 to 20 of about 8,495,694 (247)
Artwork contributed to publication 'Dark Mountain' (issue 21) [PDF]
, 2022 Artwork contributed to publication 'Dark Mountain' (issue 21) "Our twenty-first issue revolves around the theme of confluence. The image of watersmeet, of two streams merging into one, has long had sacred connotations, as shown by the votive ...
Carter, Justin
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Limits on spin-dependent WIMP-proton cross-sections using the DRIFT-IId directional dark matter detector [PDF]
, 2011 The nature of dark matter remains one of the biggest questions in physics today. Weakly Interacting Massive Particles (WIMPs) are a particularly well motivated candidate for the missing matter that makes up 85% of the mass of the Universe.
Pipe, Mark
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Fully Depleted, Trench-Pinned Photo Gate for CMOS Image Sensor Applications
Sensors, 2020 Tackling issues of implantation-caused defects and contamination, this paper presents a new complementary metal−oxide−semiconductor (CMOS) image sensor (CIS) pixel design concept based on a native epitaxial layer for photon detection, charge ...
Francois Roy +10 more
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Sensors, 2023 The application of TiO2 nanorods in the field of ultraviolet (UV) photodetectors is hindered by a high dark current, which is attributed to crystal surface defects and intrinsic excitation by carrier thermal diffusion.
Yupeng Zhang +7 more
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Applied Sciences, 2022 In this paper, we report on temperature dependence performances of a midwave infrared (MWIR) Ga-free InAs/InAsSb type-II superlattice (T2SL) barrier (XBn) photodetector grown by molecular beam epitaxy on n-type GaSb substrate.
Maxime Bouschet +6 more
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Temperature Sensors Integrated into a CMOS Image Sensor
Proceedings, 2017 In this work, a novel approach is presented for measuring relative temperature variations inside the pixel array of a CMOS image sensor itself. This approach can give important information when compensation for dark (current) fixed pattern noise (FPN) is
Accel Abarca +3 more
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“GeSn Rule-23”—The Performance Limit of GeSn Infrared Photodiodes
Sensors, 2023 Group-IV GeSn photodetectors (PDs) compatible with standard complementary metal–oxide-semiconductor (CMOS) processing have emerged as a new and non-toxic infrared detection technology to enable a wide range of infrared applications.
Guo-En Chang, Shui-Qing Yu, Greg Sun
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Identification of radiation induced dark current sources in pinned photodiode CMOS image sensors [PDF]
, 2011 This paper presents an investigation of Total Ionizing Dose induced dark current sources in Pinned PhotoDiodes (PPD) CMOS Image Sensors based on pixel design variations. The influence of several layout parameters is studied. Only one parameter is changed
V. Goiffon +15 more
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Applied Sciences, 2023 The performance of long-wave infrared (LWIR) quantum well (QWIP) detection systems is seriously affected by the dark current of the detectors. Tiny variations in the focal-plane temperature of the devices cause fluctuations in the dark current, which in ...
Haoting Du +6 more
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Similarities Between Proton and Neutron Induced Dark Current Distribution in CMOS Image Sensors [PDF]
, 2012 Several CMOS image sensors were exposed to neutron or proton beams (displacement damage dose range from 4 TeV/g to 1825 TeV/g) and their radiation-induced dark current distributions are compared.
Bardoux, A. +13 more
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