Results 11 to 20 of about 801,069 (309)

Dark Current Modeling for a Polyimide—Amorphous Lead Oxide-Based Direct Conversion X-ray Detector [PDF]

open access: yesSensors, 2022
The reduction of the dark current (DC) to a tolerable level in amorphous selenium (a-Se) X-ray photoconductors was one of the key factors that led to the successful commercialization of a-Se-based direct conversion flat panel X-ray imagers (FPXIs) and ...
Tristen Thibault   +3 more
doaj   +2 more sources

Proximity Gettering Design of Hydrocarbon–Molecular–Ion–Implanted Silicon Wafers Using Dark Current Spectroscopy for CMOS Image Sensors [PDF]

open access: yesSensors, 2019
We developed silicon epitaxial wafers with high gettering capability by using hydrocarbon−molecular−ion implantation. These wafers also have the effect of hydrogen passivation on process-induced defects and a barrier to out-diffusion of ...
Kazunari Kurita   +7 more
doaj   +2 more sources

Correction of dark current in consumer cameras

open access: yesJournal of Electronic Imaging, 2010
A study of dark current in digital imagers in digital single- lens reflex (DSLR) and compact consumer-grade digital cameras is presented. Dark current is shown to vary with temperature, expo- sure time, and ISO setting. Further, dark current is shown to in- crease in successive images during a series of images.
Justin C. Dunlap   +2 more
openaire   +5 more sources

Analysis of Dark Current in BRITE Nanostellite CCD Sensors. [PDF]

open access: yesSensors (Basel), 2018
The BRightest Target Explorer (BRITE) is the pioneering nanosatellite mission dedicated for photometric observations of the brightest stars in the sky. The BRITE charge coupled device (CCD) sensors are poorly shielded against extensive flux of energetic particles which constantly induce defects in the silicon lattice.
Popowicz A.
europepmc   +4 more sources

Carrier Transport Control for Enhanced Performance in Dual-Color Quantum Well Infrared Photodetectors [PDF]

open access: yesNanomaterials
Infrared photodetectors are important for military, medical, and environmental applications. Dual-color quantum well infrared photodetectors (QWIPs) are attractive because they can provide multi-spectral information, but their performance is often ...
Zhen Chen   +3 more
doaj   +2 more sources

Dark current measurements in a CMOS imager

open access: yesSPIE Proceedings, 2008
We present data for the dark current of a commercially available CMOS image sensor for different gain settings and bias offsets over the temperature range of 295 to 340 K and exposure times of 0 to 500 ms. The analysis of hot pixels shows two different sources of dark current.
William C. Porter   +4 more
openaire   +4 more sources

Dark current behavior in DSLR cameras

open access: yesSPIE Proceedings, 2009
Digital single-lens reflex (DSLR) cameras are examined and their dark current behavior is presented. We examine the influence of varying temperature, exposure time, and gain setting on dark current. Dark current behavior unique to sensors within such cameras is observed.
Dunlap, Justin Charles   +3 more
openaire   +5 more sources

Development of Low Parasitic Light Sensitivity and Low Dark Current 2.8 μm Global Shutter Pixel [PDF]

open access: yesSensors, 2018
: We developed a low parasitic light sensitivity (PLS) and low dark current 2.8 μm global shutter pixel. We propose a new inner lens design concept to realize both low PLS and high quantum efficiency (QE).
Toshifumi Yokoyama   +5 more
doaj   +2 more sources

Simulating dark current in NLC structures [PDF]

open access: yesNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 2006
Dark current generation and capture are of great importance in high gradient accelerating structure R&D especially for the NLC which aims to operate at 65 MV/m with specific limits on dark current and RF breakdown rates. Although considerable effort has been devoted to building and testing various types of structures to meet these requirements, few ...
Ng, C. K.   +7 more
openaire   +2 more sources

Reduction of Fluorine Diffusion and Improvement of Dark Current Using Carbon Implantation in CMOS Image Sensor

open access: yesCrystals, 2021
Recently, the demand of a high resolution complementary metal-oxide semiconductor (CMOS) image sensor is dramatically increasing. As the pixel size reduces to submicron, however, the quality of the sensor image decreases.
Su-Young Chai, Sung-Hoon Choa
doaj   +1 more source

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