Results 211 to 220 of about 12,477 (256)
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2011
Image sensors are widely used in today’s consumer electronics and have been integrated with various hand held devices like cell phones. Growing interest has been placed on CMOS image sensor as technology scales and imager sizes approach that of CCDs [79]. This chapter will give a simplified mock 3D example of an active pixel CMOS image sensor.
Simon Li, Yue Fu
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Image sensors are widely used in today’s consumer electronics and have been integrated with various hand held devices like cell phones. Growing interest has been placed on CMOS image sensor as technology scales and imager sizes approach that of CCDs [79]. This chapter will give a simplified mock 3D example of an active pixel CMOS image sensor.
Simon Li, Yue Fu
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CMOS Image Sensor with Watermarking Capabilities
2005 IEEE International Symposium on Circuits and Systems, 2005The problem of authenticity for digital images has been helped by the development of digital watermarking. As an extension of the current state-of-the-art, a CMOS active pixel sensor (APS) imager with built-in watermarking of the output image is presented.
Graham R. Nelson +2 more
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A CMOS Image Sensor for DNA Microarrays
2007 IEEE Custom Integrated Circuits Conference, 2007An image sensor designed with standard 0.18 mum CMOS technology is used to construct a DNA microarray scanner. The detection limit of 4590 fluorophores/mum2 is compared with 4.49 fluorophores/mum2 of a commercial photomultiplier-tube-based microarray scanner.
Samir Parikh, P. Glenn Gulak, Paul Chow
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A time-based CMOS image sensor
2004 IEEE International Symposium on Circuits and Systems (IEEE Cat. No.04CH37512), 2004A two-degree of freedom time-based CMOS image sensor is proposed in this paper for wide dynamic range imaging. Instead of reading analog voltages off chip, a time representation is used to record when the photodetector voltage drops below a time-varying threshold.
Qiang Luo, John G. Harris
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CMOS image sensors for sensor networks
Analog Integrated Circuits and Signal Processing, 2006We report on two generations of CMOS image sensors with digital output fabricated in a 0.6 ?m CMOS process. The imagers embed an ALOHA MAC interface for unfettered self-timed pixel read-out targeted to energy-aware sensor network applications. Collision on the output is monitored using contention detector circuits.
Eugenio Culurciello, Andreas G. Andreou
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On-Chip Digital Temperature Sensor for CMOS Image Sensor
2018 International Conference on Biomedical Engineering and Applications (ICBEA), 2018The Digital Temperature Sensors relies on two main parts: temperature sensor with analogue output and analogue-to-digital converter. The analogue temperature sensor architecture developed in this work consists on having a circuit with MOSFETs producing an output voltage proportional to absolute temperature the most linear possible. This voltage is then
Ruben Gomes +2 more
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2017
In the image sensing optical receiver, such as CMOS Image Sensors (CIS), in general, comprise of photodiode and analog-mixed -signal circuits to amplify small photocurrent into digital signals. The CMOS image sensors are now the technology of choice for most imaging applications, such as digital video cameras, scanner and numerous other.
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In the image sensing optical receiver, such as CMOS Image Sensors (CIS), in general, comprise of photodiode and analog-mixed -signal circuits to amplify small photocurrent into digital signals. The CMOS image sensors are now the technology of choice for most imaging applications, such as digital video cameras, scanner and numerous other.
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CMOS Image Sensors and the Quanta Image Sensor
2018 International Conference on Optical MEMS and Nanophotonics (OMN), 2018This paper briefly reviews CMOS image sensor invention and development. The focus of the paper is on a possible successor - the Quanta Image Sensor – a photon-counting image sensor that operates at room temperature without avalanche multiplication. Experimental results with 1Mpixel array devices are described.
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A CMOS Sensor for Nano-Imaging
2006 Sixth IEEE Conference on Nanotechnology, 2006We report on the design and measurements of a new direct electron imaging sensor. The active pixel sensor array consists of 512 by 550 pixels, each 5 by 5 μm in size, with a ∼8 μm epitaxial layer, to achieve an effective fill factor of 100%. Spatial resolution of 2.3 μm for a single incident e-has been measured.
null Shengdong Li +3 more
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