Results 251 to 260 of about 58,142 (300)
Advanced Science, EarlyView.Low‐frequency noise fingerprints in hafnia ferroelectrics provide a quantitative handle to resolve the long‐standing debate between polarization‐mediated and defect‐mediated switching. By tuning oxygen vacancy density via ALD O3 dose time and applying a physically constrained deconvolution, we extract bias‐resolved current fractions for both mechanisms
Ryun‐Han Koo +8 more
wiley +1 more source
Advanced Science, EarlyView.The HfxZr1‐xO2‐based ferroelectric/antiferroelectric bilayer capacitor exhibits morphotropic‐phase‐boundary behavior with a high dielectric constant (∼52) at 2 V. Phase engineering stabilizes o/t‐phase coexistence and suppresses m‐phase formation, enabling capacitance enhancement and self‐optimization under cycling for scalable low‐voltage, high‐κ ...
Junseok Kim +5 more
wiley +1 more source
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IEEE Circuits and Devices Magazine, 2005
In this article, we provide a basic introduction to CMOS image-sensor technology, design and performance limits and present recent developments and future directions in this area. We also discuss image-sensor operation and describe the most popular CMOS image-sensor architectures. We note the main non-idealities that limit CMOS image sensor performance,
A. El Gamal, H. Eltoukhy
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In this article, we provide a basic introduction to CMOS image-sensor technology, design and performance limits and present recent developments and future directions in this area. We also discuss image-sensor operation and describe the most popular CMOS image-sensor architectures. We note the main non-idealities that limit CMOS image sensor performance,
A. El Gamal, H. Eltoukhy
openaire +2 more sources
Proceedings of the 2004 11th IEEE International Conference on Electronics, Circuits and Systems, 2004. ICECS 2004., 2005
Design, operation and measurement results of a CMOS camera implemented within a SOI wafer are presented. The peak of photodiode quantum efficiency is obtained for the wavelengths of 400-500 nm. In addition, noise measurements of the 1/f noise in P-MOS and N-MOS transistors for analog applications are reported under wide bias conditions ranging from ...
I. Brouk, Y. Nemirovsky
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Design, operation and measurement results of a CMOS camera implemented within a SOI wafer are presented. The peak of photodiode quantum efficiency is obtained for the wavelengths of 400-500 nm. In addition, noise measurements of the 1/f noise in P-MOS and N-MOS transistors for analog applications are reported under wide bias conditions ranging from ...
I. Brouk, Y. Nemirovsky
openaire +1 more source
CMOS image sensors for sensor networks
Analog Integrated Circuits and Signal Processing, 2006We report on two generations of CMOS image sensors with digital output fabricated in a 0.6 ?m CMOS process. The imagers embed an ALOHA MAC interface for unfettered self-timed pixel read-out targeted to energy-aware sensor network applications. Collision on the output is monitored using contention detector circuits.
Eugenio Culurciello, Andreas G. Andreou
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2011
Image sensors are widely used in today’s consumer electronics and have been integrated with various hand held devices like cell phones. Growing interest has been placed on CMOS image sensor as technology scales and imager sizes approach that of CCDs [79]. This chapter will give a simplified mock 3D example of an active pixel CMOS image sensor.
Simon Li, Yue Fu
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Image sensors are widely used in today’s consumer electronics and have been integrated with various hand held devices like cell phones. Growing interest has been placed on CMOS image sensor as technology scales and imager sizes approach that of CCDs [79]. This chapter will give a simplified mock 3D example of an active pixel CMOS image sensor.
Simon Li, Yue Fu
openaire +1 more source
CMOS active pixel image sensor
IEEE Transactions on Electron Devices, 1994A new CMOS active pixel image sensor is reported. The sensor uses a 2.0 /spl mu/m double-poly, double-metal foundry CMOS process and is realized as a 128/spl times/128 array of 40 /spl mu/m/spl times/40 /spl mu/m pixels. The sensor features TTL compatible voltages, low noise and large dynamic range, and will be useful in machine vision and smart sensor
S. Mendis, S.E. Kemeny, E.R. Fossum
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2006
After penetrating the consumer and industrial world for over a decade, digital imaging is slowly but inevitably gaining marketshare in the automotive world. Cameras will become a key sensor in increasing car safety, driving assistance and driving comfort.
S. Maddalena, A. Darmon, R. Diels
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After penetrating the consumer and industrial world for over a decade, digital imaging is slowly but inevitably gaining marketshare in the automotive world. Cameras will become a key sensor in increasing car safety, driving assistance and driving comfort.
S. Maddalena, A. Darmon, R. Diels
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2017
In the image sensing optical receiver, such as CMOS Image Sensors (CIS), in general, comprise of photodiode and analog-mixed -signal circuits to amplify small photocurrent into digital signals. The CMOS image sensors are now the technology of choice for most imaging applications, such as digital video cameras, scanner and numerous other.
openaire +1 more source
In the image sensing optical receiver, such as CMOS Image Sensors (CIS), in general, comprise of photodiode and analog-mixed -signal circuits to amplify small photocurrent into digital signals. The CMOS image sensors are now the technology of choice for most imaging applications, such as digital video cameras, scanner and numerous other.
openaire +1 more source