Results 91 to 100 of about 3,872 (182)

Study of dark current random telegraph signal in proton-irradiated backside illuminated CMOS image sensors

open access: yesResults in Physics, 2020
The dark current random telegraph signal (DC-RTS) has been investigated in a four-transistor pinned photodiode 0.18-μm backside illuminated CMOS image sensor (BSI CIS). The sensors were irradiated by high energy protons of 50, 60 and 70 MeV, respectively.
Bingkai Liu   +9 more
doaj   +1 more source

Vulnerability of CMOS image sensors in megajoule class laser harsh environment [PDF]

open access: yes, 2012
CMOS image sensors (CIS) are promising candidates as part of optical imagers for the plasma diagnostics devoted to the study of fusion by inertial confinement.
Baggio, Jacques   +14 more
core   +3 more sources

“Alien versus predator”: predatory effect of coccinellid Exochomus quadripustulatus on the scale insect Toumeyella parvicornis. An open‐field experimentation on the Pinus pinea of Rome

open access: yesInsect Science, EarlyView.
The release of gravid Exochomus quadripustulatus females proved to be effective in containing Toumeyella parvicornis infestations on stone pine trees, under open‐field condition. The ladybugs caused a lower infestation level compared to the trees that did not receive any ladybugs during the observation season.
Nicolò Di Sora   +4 more
wiley   +1 more source

Pig Seminal Plasma Extracellular Vesicles Enhance Motility During Preservation of Epididymal Spermatozoa but Impair Capacitation and IVF Parameters

open access: yesAndrology, EarlyView.
ABSTRACT Background Extracellular vesicles (EVs) produced by accessory sex glands play a key role in sperm functionality, influencing motility, viability, acrosome integrity, metabolic activity, and capacitation. Most studies on the effects of EVs on spermatozoa have focused on ejaculated spermatozoa, which have already been exposed to their own native
Ana Moya‐Fernández   +4 more
wiley   +1 more source

A 250 m Direct Time-of-Flight Ranging System Based on a Synthesis of Sub-Ranging Images and a Vertical Avalanche Photo-Diodes (VAPD) CMOS Image Sensor

open access: yesSensors, 2018
We have developed a direct time-of-flight (TOF) 250 m ranging Complementary Metal Oxide Semiconductor (CMOS) image sensor (CIS) based on a 688 × 384 pixels array of vertical avalanche photodiodes (VAPD).
Yutaka Hirose   +14 more
doaj   +1 more source

GravityCam: higher resolution visible wide-field imaging [PDF]

open access: yes, 2018
The limits to the angular resolution has, during the latest 70 years, been obtainable from the ground only through extremely expensive adaptive optics facilities at large telescopes, and covering extremely small spatial areas per exposure.
Downing   +7 more
core   +1 more source

Surveillance patterns in non‐muscle‐invasive bladder cancer across risk groups: a real‐world analysis

open access: yesBJU International, EarlyView.
Objective To provide insight into real‐world surveillance practices for patients with low‐risk (LR), intermediate‐risk (IR), and (very) high‐risk (HR) non‐muscle invasive bladder cancer (NMIBC). Patients and Methods Cystoscopy surveillance patterns were analysed using real‐world data from two population‐based cohort studies in the Netherlands ...
Lisa M. C. van Hoogstraten   +6 more
wiley   +1 more source

A High Speed CMOS Image Sensor with a Novel Digital Correlated Double Sampling and a Differential Difference Amplifier

open access: yesSensors, 2015
In order to increase the operating speed of a CMOS image sensor (CIS), a new technique of digital correlated double sampling (CDS) is described. In general, the fixed pattern noise (FPN) of a CIS has been reduced with the subtraction algorithm between ...
Daehyeok Kim, Jaeyoung Bae, Minkyu Song
doaj   +1 more source

Optoelectrical performance evolution of CMOS image sensors exposed to gamma radiation [PDF]

open access: yes, 2009
In this paper we present a study of ionizing radiation effects, up to 5 kGy, in several CMOS image sensors manufactured using a commercial 0.18 μm technology dedicated to ...
Estribeau, Magali   +2 more
core  

Ionization versus displacement damage effects in proton irradiated CMOS sensors manufactured in deep submicron process [PDF]

open access: yes, 2009
Proton irradiation effects have been studied on CMOS image sensors manufactured in a 0.18 μm technology dedicated to imaging. The ionizing dose and displacement damage effects were discriminated and localized thanks to 60Co irradiations and large ...
Bernard, Frédéric   +4 more
core   +2 more sources

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