Results 231 to 240 of about 72,784 (298)

Harnessing Phase Dynamics Across Diverse Frequencies with Multifrequency Oscillatory Neural Networks

open access: yesAdvanced Intelligent Discovery, EarlyView.
Oscillatory Neural Networks (ONNs) are an emerging computing paradigm that encodes information in the phases of coupled oscillators. Traditionally, ONNs have been investigated using homogeneous frequency oscillators. However, physical hardware implementations are inherently subject to frequency mismatches, device variability, and nonuniformities.
Nil Dinç   +2 more
wiley   +1 more source

Cryogenic Neuromorphic Synaptic Behavior in 180 nm Silicon Transistors for Emerging Computing Systems

open access: yesAdvanced Intelligent Systems, EarlyView.
This study investigates the neuromorphic plasticity behavior of 180 nm bulk complementary metal oxide semiconductor (CMOS) transistors at cryogenic temperatures. The observed hysteresis data reveal a signature of synaptic behavior in CMOS transistors at 4 K.
Fiheon Imroze   +8 more
wiley   +1 more source

Fully CMOS‐Compatible 3‐T Embedded NOR Flash Memory Achieving 28 ns Long‐Term Potentiation/Long‐Term Depression for High‐Speed Online Training Accelerators

open access: yesAdvanced Intelligent Systems, EarlyView.
A fully complementary metal–oxide–semiconductor process‐compatible novel 3‐T embedded NOR flash is demonstrated on a 28 nm fully depleted silicon‐on‐insulator platform. The proposed memory achieves record‐fast 28‐long‐term potentiation and depression , offering high‐speed and highly reliable synaptic behavior for online training in neuromorphic ...
Jae Seung Woo   +4 more
wiley   +1 more source

Wafer-scale integration of photonic integrated circuits and atomic vapor cells. [PDF]

open access: yesNanophotonics
Grosman A   +4 more
europepmc   +1 more source

Ternary Content‐Addressable Memory Using One Capacitor and One Nanoelectromechanical Memory Switch for Data‐Intensive Applications

open access: yesAdvanced Intelligent Systems, EarlyView.
A charge‐domain ternary content‐addressable memory using one capacitor one nanoelectromechanical memory switch (1C‐1N TCAM) is proposed for energy‐efficient, high‐reliability computations. Integrated with the back‐end‐of‐line process, the 1C‐1N TCAM leverages the air gap capacitance to achieve a high capacitance ratio and ternary functionality.
Jin Wook Lee   +5 more
wiley   +1 more source

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