Results 231 to 240 of about 72,784 (298)
Harnessing Phase Dynamics Across Diverse Frequencies with Multifrequency Oscillatory Neural Networks
Oscillatory Neural Networks (ONNs) are an emerging computing paradigm that encodes information in the phases of coupled oscillators. Traditionally, ONNs have been investigated using homogeneous frequency oscillators. However, physical hardware implementations are inherently subject to frequency mismatches, device variability, and nonuniformities.
Nil Dinç +2 more
wiley +1 more source
A 209 ps Shutter-Time CMOS Image Sensor for Ultra-Fast Diagnosis. [PDF]
Cai H, Xie Z, Ma Y, Xiang L.
europepmc +1 more source
SiC CMOS and memory devices for high-temperature integrated circuits
Mattias Ekström
openalex +1 more source
This study investigates the neuromorphic plasticity behavior of 180 nm bulk complementary metal oxide semiconductor (CMOS) transistors at cryogenic temperatures. The observed hysteresis data reveal a signature of synaptic behavior in CMOS transistors at 4 K.
Fiheon Imroze +8 more
wiley +1 more source
Complementary and asymmetric tapered bent mid-infrared waveguide arrays for subwavelength-pitch integration and crosstalk minimization. [PDF]
Zafar H, Pereira MF.
europepmc +1 more source
A fully complementary metal–oxide–semiconductor process‐compatible novel 3‐T embedded NOR flash is demonstrated on a 28 nm fully depleted silicon‐on‐insulator platform. The proposed memory achieves record‐fast 28‐long‐term potentiation and depression , offering high‐speed and highly reliable synaptic behavior for online training in neuromorphic ...
Jae Seung Woo +4 more
wiley +1 more source
Wafer-scale integration of photonic integrated circuits and atomic vapor cells. [PDF]
Grosman A +4 more
europepmc +1 more source
Latch-up and radiation integrated circuit--LURIC: a test chip for CMOS latch-up investigation
D.B. Estreich
openalex +2 more sources
A charge‐domain ternary content‐addressable memory using one capacitor one nanoelectromechanical memory switch (1C‐1N TCAM) is proposed for energy‐efficient, high‐reliability computations. Integrated with the back‐end‐of‐line process, the 1C‐1N TCAM leverages the air gap capacitance to achieve a high capacitance ratio and ternary functionality.
Jin Wook Lee +5 more
wiley +1 more source

