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Ge photodetectors integrated in CMOS photonic circuits
SPIE Proceedings, 2008ABSTRACT We describe our approach to the monolithic integration of Ge photodetectors in a photonics-enabled CMOS technology.Ge waveguide photodetectors allow fast and efficient conversion of optical signals in the near infrared (1.55um) to theelectrical domain thus enabling the fabrication of compact, high speed (10Gbps) receivers.Keywords: Ge ...
G. MASINI +6 more
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Terahertz CMOS integrated circuits
2014 IEEE International Symposium on Radio-Frequency Integration Technology, 2014Advances in circuit techniques, aided by continued lithographic scaling, will deliver CMOS technology capable of operation in the submillimeter-wave bands. Many building blocks operating at near-THz frequencies in silicon-based technologies (SiGe and CMOS) have appeared in the recent literature.
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Paths to terahertz CMOS integrated circuits
2009 IEEE Custom Integrated Circuits Conference, 2009A 140-GHz fundamental mode VCO in 90-nm CMOS and a 410-GHz push-push VCO in 45-nm CMOS, and a 125-GHz Schottky diode frequency doubler, a 50-GHz phase locked loop with a frequency doubled output at 100 GHz, a 180-GHz Schottky diode detector and a 700-GHz plasma wave detector in 130-nm CMOS have been demonstrated. Based on these, paths to terahertz CMOS
D. Shim +7 more
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Noise immunity of CMOS integrated circuits
Microelectronics Journal, 1979Sources of noise in logic circuits are discussed and definitions stated. The good noise performance of CMOS devices is then explained.
T. Chesney, R. Funk
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CMOS-bipolar monolithic integrated-circuit technology
1973 International Electron Devices Meeting, 1973This paper describes a new integrated circuit process in which CMOS and bipolar integrated-circuit technologies have been monolithically mated without compromising the performance characteristics of either the bipolar or the CMOS devices. The approach taken has been the addition of the required steps for fabricating CMOS devices to the basic linear ...
M.A. Polinsky, O. Schade, J.P. Keller
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Integrated Circuits Beyond CMOS
2008Semiconductor microelectronics, based on silicon CMOS circuits, is arguably the most successful technology ever developed by mankind because it sustained its fast, exponential (Moore’s Law) progress for several decades. As a result, this technology has become the basis of all current information technology revolution.
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CMOS/bipolar linear integrated circuits
1974 IEEE International Solid-State Circuits Conference. Digest of Technical Papers, 1974A simple, high-performance operational amplifier using an economical monolithic CMOS/bipolar process will be described, and circuit components, layout and performance discussed.
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Hybrid CMOS/Molecular Integrated Circuits
2009Despite revolutionary advances enabled by process scaling in the past few decades, CMOS silicon technology is likely to run out of steam in the next 10–15 years [1]. The prospect of nanoelectronics offers many potential alternatives; single electron tunneling (SET) devices, resonant tunneling diodes (RTD), rapid single flux quantum logic (RSFQ), spin ...
M. R. Stan, G. S. Rose, M. M. Ziegler
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CMOS Integrated Circuits for DNA Sensing
Qatar Foundation Annual Research Conference Proceedings Volume 2016 Issue 1, 2016BackgroundWith the advance of semiconductor technologies, bio-technological application-specific integrated circuits (ASICs) have become a major trend of the industry. Examples include Microelectrode measurement array systems for in-vitro and in-vivo physiological research at the cellular level [1] [2].
Amine Bermak, Saqib Mohamad
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CMOS integrated circuits for multivalued logic
International Journal of Electronics, 1985ABSTRACT The use of CMOS integrated circuits in the design of multivalued logic systems is extended. Circuit design of basic quaternary operators (inverters, NAND, NOR, cycling and inverse cycling gates) is presented. These basic quaternary operators can be used as building blocks in four-valued digital systems.
H. T. MOUFTAH, K. C. SMITH
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