Results 1 to 10 of about 1,227 (164)
Low-power-consumption CMOS inverter array based on CVD-grown p-MoTe2 and n-MoS2 [PDF]
iScience, 2021 Summary: Two-dimensional (2D) semi-conductive transition metal dichalcogenides (TMDCs) have shown advantages for logic application. Complementary metal-oxide-semiconductor (CMOS) inverter is an important component in integrated circuits in view of low ...
Wanying Du +5 more
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GaN-Based GAA Vertical CMOS Inverter [PDF]
IEEE Journal of the Electron Devices Society, 2022 In this work, we simulate the static and dynamic characteristics of gallium nitride (GaN)-based gate-all-around (GAA) vertical nanowire complementary metal–oxide–semiconductor (CMOS) inverter. Based on the 3-D simulator of Silvaco-TCAD, the
Xinke Liu +7 more
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Structurally optimized SiC CMOS FinFET for high-temperature and low-power SoC logic integration [PDF]
Scientific ReportsA high-temperature-operable binary inverter was designed through structural optimization of SiC-based CMOS FinFETs using 3D TCAD simulations. A FinFET architecture was incorporated into SiC CMOS with an optimized fin structure to overcome the critical ...
Tae Seong Kwon +7 more
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Break-before-Make CMOS Inverter for Power-Efficient Delay Implementation [PDF]
The Scientific World Journal, 2014 A modified static CMOS inverter with two inputs and two outputs is proposed to reduce short-circuit current in order to increment delay and reduce power overhead where slow operation is required.
Janez Puhan +3 more
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Understanding the behavior of RTD-loaded NMOS inverter through compact-form analysis
Ain Shams Engineering Journal, 2018 Resonant-tunneling diodes (RTDs) find a wide variety of applications in oscillators, digital circuits, and latches due to their reduced circuit complexity, low power, and high speed.
Sherif M. Sharroush
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Energy-Efficient circuits with improved diode free adiabatic logic design methodology
Ain Shams Engineering Journal, 2023 This paper demonstrates a detailed analysis of an unique improved diode-free adiabatic logic (IDFAL) circuit. The IDFAL is operated based on adiabatic switching principle.
Reginald H. Vanlalchaka +2 more
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IEEE Journal of the Electron Devices Society, 2023 In this study, we experimentally demonstrated concepts for realizing doping-free Tungsten Diselenide (WSe2) complementary metal-oxide-semiconductor (CMOS) inverter by developing alloys and compound metals used as source/drain (S/D) contacts.
Takamasa Kawanago +8 more
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Scientific Reports, 2022 A low-cost, flexible processor is essential to realise affordable flexible electronic systems and transform everyday objects into smart-objects. Thin film transistors (TFTs) based on metal-oxides (or organics) are ideal candidates as they can be ...
N. C. A. van Fraassen +4 more
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Journal of Information Display, 2023 Semiconductors processed at low temperature for complementary metal–oxide semiconductors (CMOS) devices are receiving considerable attention in the field of integrated electronic applications.
Muhammad Naqi +7 more
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Low-Voltage High-Speed Ring Oscillator With a-InGaZnO TFTs
IEEE Journal of the Electron Devices Society, 2020 This paper presents a high-speed ring oscillator (RO) with amorphous Indium-Gallium-Zinc-Oxide Thin-film transistors (a-IGZO TFTs). The proposed RO reduces the delay of a single stage inverter using intermediate signals generated within the RO, hence ...
Bhawna Tiwari +8 more
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