Results 1 to 10 of about 86,770,437 (171)

Band‐to‐Band Tunneling Control by External Forces: A Key Principle and Applications

Advanced Electronic Materials, 2023
Band‐to‐band tunneling (BTBT) devices with superior subthreshold swing directly related to on/off switching speed and power consumption efficiency have emerged as a breakthrough of the limitation in conventional metal‐oxide‐semiconductor field‐effect ...
Gunhoo Woo, Taesung Kim, Hocheon Yoo
doaj   +2 more sources

Ultra-sensitive label-free bio-detection via dielectric-modulated GOSC-SOI-TFET [PDF]

Scientific Reports
In this work, a highly sensitive label-free dielectric-modulated biosensor based on a Gate-Over-Source-Channel Silicon-on-Insulator Tunnel Field-Effect Transistor (GOSC-SOI-TFET) is proposed and systematically investigated. The novelty of the design lies
S. N. Vittal Kollapudi, Manish Kumar Singh   +1 more
doaj   +2 more sources

A resilient type-III broken gap Ga2O3/SiC van der Waals heterogeneous bilayer with band-to-band tunneling effect and tunable electronic property [PDF]

Scientific Reports
The potential of van der Waals (vdW) heterostructure to incorporate the outstanding features of stacked materials to meet a variety of application requirements has drawn considerable attention.
Naim Ferdous, Md. Sherajul Islam, Jeongwon Park   +2 more
doaj   +2 more sources

New tunneling source follower with low 1/f noise and high voltage gain [PDF]

Scientific Reports
We have designed a tunneling source follower (TSF) for image sensors that achieves high voltage gain (A v ) and low 1/f noise simultaneously. The TSF is composed of N-P-N-N, especially the p-doped grounded area, which serves to amplify the insufficient ...
Ki Yeong Kim, Hyangwoo Kim, Minkeun Choi, Kyounghwan Oh, Hyeongseok Yoo, Yijoon Kim, Yoon Sol, Sungbong Park, Jae-Kyu Lee, Chang-Ki Baek   +9 more
doaj   +2 more sources

Harnessing chaotic bifurcation in positive feedback transistors for secure and scalable random key generation [PDF]

Nature Communications
In the era of big data, robust data security is more critical than ever. One promising way to create unpredictable random keys is to use the intrinsic physical randomness of electronic devices. However, controlling and reproducing this randomness remains
Jiseong Im, Jonghyun Ko, Jisung Im, Joon Hwang, Ryun-Han Koo, Sung-Ho Park, Jangsaeng Kim, Wonjun Shin, Sung Yun Woo, Jong-Ho Lee   +9 more
doaj   +2 more sources

Investigation of Tunneling Effect for a N-Type Feedback Field-Effect Transistor

Micromachines, 2022
In this paper, the tunneling effect for a N-type feedback field-effect transistor (NFBFET) was investigated. The NFBFET has highly doped N-P junction in the channel region.
Jong Hyeok Oh, Yun Seop Yu
doaj   +1 more source

Effect of band to band tunnelling (BTBT) on multi-gate Tunnel field effect transistors (TFETs)-A Review

IOP Conference Series: Materials Science and Engineering, 2021
Abstract TFETs (tunnel field effect transistor) are providing solution to affairs associated with conventional MOSFET devices such as short-channel effects (SCEs) and limitation of minimum (60 mV/decade) subthreshold slope (SS). TFET is a p-i-n diode which conducts in reverse bias and behaves like a transistor due to tunnelling mechanism
P Shilla, V Verma, R Kumar, A Kumar
openaire   +1 more source

A Study on Dominant Mechanism and Analytical Model of Low-Frequency Noise in FD-SOI pTFET

IEEE Journal of the Electron Devices Society, 2022
The origin of low-frequency noise (LFN) properties and the accuracy of LFN model were demonstrated in a fully depleted silicon-on-insulator p-type tunneling field-effect transistor (pTFET).
Hyun-Jin Shin, Sunil Babu Eadi, Seong-Hyun Kim, Tae-Gyu Ryu, Yeong-Jin An, Do-Woo Kim, Hi-Deok Lee, Hyuk-Min Kwon   +7 more
doaj   +1 more source

Novel SiGe/Si Heterojunction Double-Gate Tunneling FETs with a Heterogate Dielectric for High Performance

Micromachines, 2023
In this paper, a new SiGe/Si heterojunction double-gate heterogate dielectric tunneling field-effect transistor with an auxiliary tunneling barrier layer (HJ-HD-P-DGTFET) is proposed and investigated using TCAD tools. SiGe material has a smaller band gap
Qing Chen, Rong Sun, Ruixia Miao, Hanxiao Liu, Lulu Yang, Zengwei Qi, Wei He, Jianwei Li   +7 more
doaj   +1 more source

Exploiting Within-Channel Tunneling in a Nanoscale Tunnel Field-Effect Transistor

IEEE Open Journal of Nanotechnology, 2020
In this paper, using device simulations, we investigate electrical characteristics of a tunnel field-effect transistor (TFET) in which band-to-band tunneling (BTBT) occurs dominantly within the channel, rather than at source-channel junction.
Shelly Garg, Sneh Saurabh
doaj   +1 more source