Results 1 to 10 of about 573 (171)
Band‐to‐Band Tunneling Control by External Forces: A Key Principle and Applications
Advanced Electronic Materials, 2023 Band‐to‐band tunneling (BTBT) devices with superior subthreshold swing directly related to on/off switching speed and power consumption efficiency have emerged as a breakthrough of the limitation in conventional metal‐oxide‐semiconductor field‐effect ...
Gunhoo Woo, Taesung Kim, Hocheon Yoo
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New tunneling source follower with low 1/f noise and high voltage gain [PDF]
Scientific ReportsWe have designed a tunneling source follower (TSF) for image sensors that achieves high voltage gain (A v ) and low 1/f noise simultaneously. The TSF is composed of N-P-N-N, especially the p-doped grounded area, which serves to amplify the insufficient ...
Ki Yeong Kim +9 more
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Investigation of Tunneling Effect for a N-Type Feedback Field-Effect Transistor
Micromachines, 2022 In this paper, the tunneling effect for a N-type feedback field-effect transistor (NFBFET) was investigated. The NFBFET has highly doped N-P junction in the channel region.
Jong Hyeok Oh, Yun Seop Yu
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A resilient type-III broken gap Ga2O3/SiC van der Waals heterogeneous bilayer with band-to-band tunneling effect and tunable electronic property [PDF]
Scientific ReportsThe potential of van der Waals (vdW) heterostructure to incorporate the outstanding features of stacked materials to meet a variety of application requirements has drawn considerable attention.
Naim Ferdous +2 more
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Compact Model for L-Shaped Tunnel Field-Effect Transistor Including the 2D Region
Applied Sciences, 2019 The L-shaped tunneling field-effect transistor (LTFET) is the only line-tunneling type of TFET to be experimentally demonstrated. To date, there is no literature available on the compact model of LTFET.
Faraz Najam, Yun Seop Yu
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Harnessing chaotic bifurcation in positive feedback transistors for secure and scalable random key generation [PDF]
Nature CommunicationsIn the era of big data, robust data security is more critical than ever. One promising way to create unpredictable random keys is to use the intrinsic physical randomness of electronic devices. However, controlling and reproducing this randomness remains
Jiseong Im +9 more
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IOP Conference Series: Materials Science and Engineering, 2021 Abstract TFETs (tunnel field effect transistor) are providing solution to affairs associated with conventional MOSFET devices such as short-channel effects (SCEs) and limitation of minimum (60 mV/decade) subthreshold slope (SS). TFET is a p-i-n diode which conducts in reverse bias and behaves like a transistor due to tunnelling mechanism
P Shilla, V Verma, R Kumar, A Kumar
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A Study on Dominant Mechanism and Analytical Model of Low-Frequency Noise in FD-SOI pTFET
IEEE Journal of the Electron Devices Society, 2022 The origin of low-frequency noise (LFN) properties and the accuracy of LFN model were demonstrated in a fully depleted silicon-on-insulator p-type tunneling field-effect transistor (pTFET).
Hyun-Jin Shin +7 more
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Micromachines, 2023 In this paper, a new SiGe/Si heterojunction double-gate heterogate dielectric tunneling field-effect transistor with an auxiliary tunneling barrier layer (HJ-HD-P-DGTFET) is proposed and investigated using TCAD tools. SiGe material has a smaller band gap
Qing Chen +7 more
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Exploiting Within-Channel Tunneling in a Nanoscale Tunnel Field-Effect Transistor
IEEE Open Journal of Nanotechnology, 2020 In this paper, using device simulations, we investigate electrical characteristics of a tunnel field-effect transistor (TFET) in which band-to-band tunneling (BTBT) occurs dominantly within the channel, rather than at source-channel junction.
Shelly Garg, Sneh Saurabh
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