Results 21 to 30 of about 573 (171)

Comprehensive Analysis of Gate-Induced Drain Leakage in Emerging FET Architectures: Nanotube FETs Versus Nanowire FETs

IEEE Access, 2017
In this paper, we have performed a comprehensive analysis of the gate-induced drain leakage (GIDL) in emerging nanotube (NT) and nanowire (NW) FET architectures.
Shubham Sahay, Mamidala Jagadesh Kumar
doaj   +1 more source

Synergy of Electrostatic and Chemical Doping to Improve the Performance of Junctionless Carbon Nanotube Tunneling Field-Effect Transistors: Ultrascaling, Energy-Efficiency, and High Switching Performance

Nanomaterials, 2022
The low on-current and direct source-to-drain tunneling (DSDT) issues are the main drawbacks in the ultrascaled tunneling field-effect transistors based on carbon nanotube and ribbons.
Khalil Tamersit, Abdellah Kouzou, Hocine Bourouba, Ralph Kennel, Mohamed Abdelrahem   +4 more
doaj   +1 more source

Process voltage temperature variability estimation of tunneling current for band-to-band-tunneling based neuron

, 2023
Compact and energy-efficient Synapse and Neurons are essential to realize the full potential of neuromorphic computing. In addition, a low variability is indeed needed for neurons in Deep neural networks for higher accuracy. Further, process (P), voltage
Sharma, Anand, Mohapatra, Nihar Ranjan, Lashkare, Sandip, Singh, Ajay Kumar, Patil, Shubham, Kadam, Abhishek, Ganguly, Udayan, R., Gaurav   +7 more
core   +1 more source

The Programming Optimization of Capacitorless 1T DRAM Based on the Dual-Gate TFET

Nanoscale Research Letters, 2017
The larger volume of capacitor and higher leakage current of transistor have become the inherent disadvantages for the traditional one transistor (1T)-one capacitor (1C) dynamic random access memory (DRAM).
Wei Li, Hongxia Liu, Shulong Wang, Shupeng Chen, Qianqiong Wang   +4 more
doaj   +1 more source

Comparative performance analysis of different gate structure engineering on double gate tunnel FET

Next Materials
Through band-to-band tunneling, Tunnel Field Effect Transistors (TFETs) reduce leakage and subthreshold swing, giving them an advantage over MOSFET. However, ambipolar conduction and low ON state current are problems with traditional TFET.
Sudha Subhalaxmi Muduli, Ananya Dastidar, Aruna Tripathy, Sukanta Kumar Swain   +3 more
doaj   +1 more source

Improving the Gate-Induced Drain Leakage and On-State Current of Fin-Like Thin Film Transistors with a Wide Drain

Applied Sciences, 2018
Polycrystalline silicon (poly-Si) thin film transistors (TFT) with a tri-gate fin-like structure and wide drain were designed and simulated to improve gate-induced drain leakage (GIDL), ON-state current, and breakdown voltage.
Hsin-Hui Hu, Yan-Wei Zeng, Kun-Ming Chen
doaj   +1 more source

Monolayer Transition Metal Dichalcogenide Channel-Based Tunnel Transistor

IEEE Journal of the Electron Devices Society, 2013
We investigate the gate controlled direct band-to-band tunneling (BTBT) current in monolayer transition-metal dichalcogenide (MX2) channel-based tunnel field effect transistor (TFET).
Ram Krishna Ghosh, Santanu Mahapatra
doaj   +1 more source

Single-Charge Tunneling in Codoped Silicon Nanodevices

Nanomaterials, 2023
Silicon (Si) nano-electronics is advancing towards the end of the Moore’s Law, as gate lengths of just a few nanometers have been already reported in state-of-the-art transistors.
Daniel Moraru, Tsutomu Kaneko, Yuta Tamura, Taruna Teja Jupalli, Rohitkumar Shailendra Singh, Chitra Pandy, Luminita Popa, Felicia Iacomi   +7 more
doaj   +1 more source

TCAD Simulation Study of ESD Behavior of InGaAs/InP Heterojunction Tunnel FETs

Crystals, 2020
For the first time, we investigated the electrostatic discharge (ESD) behavior of an InGaAs/InP heterojunction tunneling field effect transistor (HTFET). The device structure in this study has a high on-state current without extra process steps.
Zhihua Zhu, Zhaonian Yang, Yingtao Zhang, Xiaomei Fan, Juin Jei Liou, Wenbing Fan   +5 more
doaj   +1 more source

A new line tunneling SiGe/Si iTFET with control gate for leakage suppression and subthreshold swing improvement

Discover Nano, 2023
This article presents a new line tunneling dominating metal–semiconductor contact-induced SiGe–Si tunnel field-effect transistor with control gate (CG-Line SiGe/Si iTFET). With a structure where two symmetrical control gates at the drain region are given
Jyi-Tsong Lin, Shao-Cheng Weng
doaj   +1 more source