Results 21 to 30 of about 86,770,437 (171)

Optimization of Tunnel Field-Effect Transistor-Based ESD Protection Network

Crystals, 2021
The tunnel field-effect transistor (TFET) is a potential candidate for replacing the reverse diode and providing a secondary path in a whole-chip electrostatic discharge (ESD) protection network.
Zhihua Zhu, Zhaonian Yang, Xiaomei Fan, Yingtao Zhang, Juin Jei Liou, Wenbing Fan   +5 more
doaj   +1 more source

Comprehensive Analysis of Gate-Induced Drain Leakage in Emerging FET Architectures: Nanotube FETs Versus Nanowire FETs

IEEE Access, 2017
In this paper, we have performed a comprehensive analysis of the gate-induced drain leakage (GIDL) in emerging nanotube (NT) and nanowire (NW) FET architectures.
Shubham Sahay, Mamidala Jagadesh Kumar
doaj   +1 more source

Transistor-Level Activation Functions via Two-Gate Designs: From Analog Sigmoid and Gaussian Control to Real-Time Hardware Demonstrations. [PDF]

Adv Mater
Screen gate‐based transistors are presented, enabling tunable analog sigmoid and Gaussian activations. The SA‐transistor improves MRI classification accuracy, while the GA‐transistor supports precise Gaussian kernel tuning for forecasting. Both functions are implemented in a single device, offering compact, energy‐efficient analog AI processing ...
Cho J, Han Y, Lee WW, Yoo Y, Mohanan KU, Kim CH, Choi J, Kim YJ, Shin W, Yoo H.   +9 more
europepmc   +2 more sources

University Concert Band, University Symphonic Band, November 13, 1980

, 2019
Recorded during a live performance at Miller Auditorium, Western Michigan University, Kalamazoo, Michigan on November 13, 1980, 8:00 p.m., program no.
Western Michigan University. Concert Band
core   +2 more sources

Improving the Gate-Induced Drain Leakage and On-State Current of Fin-Like Thin Film Transistors with a Wide Drain

Applied Sciences, 2018
Polycrystalline silicon (poly-Si) thin film transistors (TFT) with a tri-gate fin-like structure and wide drain were designed and simulated to improve gate-induced drain leakage (GIDL), ON-state current, and breakdown voltage.
Hsin-Hui Hu, Yan-Wei Zeng, Kun-Ming Chen
doaj   +1 more source

Comparative performance analysis of different gate structure engineering on double gate tunnel FET

Next Materials
Through band-to-band tunneling, Tunnel Field Effect Transistors (TFETs) reduce leakage and subthreshold swing, giving them an advantage over MOSFET. However, ambipolar conduction and low ON state current are problems with traditional TFET.
Sudha Subhalaxmi Muduli, Ananya Dastidar, Aruna Tripathy, Sukanta Kumar Swain   +3 more
doaj   +1 more source

The Programming Optimization of Capacitorless 1T DRAM Based on the Dual-Gate TFET

Nanoscale Research Letters, 2017
The larger volume of capacitor and higher leakage current of transistor have become the inherent disadvantages for the traditional one transistor (1T)-one capacitor (1C) dynamic random access memory (DRAM).
Wei Li, Hongxia Liu, Shulong Wang, Shupeng Chen, Qianqiong Wang   +4 more
doaj   +1 more source

University Concert Band, University Symphonic Band, February 17, 1980

, 2018
Recorded during a live performance at Miller Auditorium, Western Michigan University, Kalamazoo, Michigan, February 17, 1980, program no. 205 of the Department of Music's 1979-1980 season.University Concert Band, Gregory Talford, conductor (1st-4th works)
Western Michigan University. Concert Band
core   +2 more sources

Synergy of Electrostatic and Chemical Doping to Improve the Performance of Junctionless Carbon Nanotube Tunneling Field-Effect Transistors: Ultrascaling, Energy-Efficiency, and High Switching Performance

Nanomaterials, 2022
The low on-current and direct source-to-drain tunneling (DSDT) issues are the main drawbacks in the ultrascaled tunneling field-effect transistors based on carbon nanotube and ribbons.
Khalil Tamersit, Abdellah Kouzou, Hocine Bourouba, Ralph Kennel, Mohamed Abdelrahem   +4 more
doaj   +1 more source

Monolayer Transition Metal Dichalcogenide Channel-Based Tunnel Transistor

IEEE Journal of the Electron Devices Society, 2013
We investigate the gate controlled direct band-to-band tunneling (BTBT) current in monolayer transition-metal dichalcogenide (MX2) channel-based tunnel field effect transistor (TFET).
Ram Krishna Ghosh, Santanu Mahapatra
doaj   +1 more source