Results 41 to 50 of about 360 (132)
FlexMat, EarlyView.Different wavelength photonic synapses are used for biomimetic visual applications. Abstract Bionic intelligent visual perception systems have significant application prospects in fields such as autonomous driving and robotics, medical imaging and auxiliary diagnosis, security and monitoring.
Longlong Jiang +6 more
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IEEE Journal of the Electron Devices Society, 2020 In this article, we propose a high Schottky barrier source/drain contacts based bilateral gate and assistant Gate controlled bidirectional tunnel field Effect transistor (HSB-BTFET).
Xi Liu +5 more
doaj +1 more source
From Doping to Polarity Control: Transport Switching in Silicon Nanowire Field‐Effect Transistors
physica status solidi (a), Volume 223, Issue 15, 5 August 2026.Junctionless nanowire transistors (JNTs) based on phosphorus‐doped silicon demonstrate electrostatic polarity control, ambipolar and unipolar modes, and scalable short‐channel performance. Tunable gate configurations and doping levels enable high on/off ratios and CMOS compatibility, highlighting JNTs as promising candidates for reconfigurable, next ...
Sayantan Ghosh +7 more
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Steep switching in trimmed-gate tunnel FET
AIP Advances, 2018 We propose a tunnel field-effect transistor (TFET) having a trimmed gate (TG) structure, which considerably improves the subthreshold swing (SS). The TG structure truncates the needless long band-to-band tunneling (BTBT) paths to a “channel”, which ...
Hidehiro Asai +5 more
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Strained Si and SiGe Nanowire Tunnel FETs for Logic and Analog Applications
IEEE Journal of the Electron Devices Society, 2015 Guided by the Wentzel-Kramers-Brillouin approximation for band-to-band tunneling (BTBT), various performance boosters for Si TFETs are presented and experimentally verified.
Qing-Tai Zhao +11 more
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Electron‐Wave Interference in Zener Tunneling Induced by Dopant Clusters in Silicon pn Junctions
Advanced Quantum Technologies, Volume 9, Issue 7, July 2026.Current oscillations are revealed in the Zener tunneling regime of Si nanoscale pn junctions and are attributed to the interference of coherent electron‐waves in band‐to‐band tunneling transport. Temperature dependence, simulations of random dopant distributions, and numerical interference calculations collectively demonstrate that the interference ...
Daris Alfafa +4 more
wiley +1 more source
Micromachines, 2023 In this article, the particle irradiation effect of a lightly doped Gaussian source heterostructure junctionless tunnel field-effect transistor (DMG-GDS-HJLTFET) is discussed.
Haiwu Xie, Hongxia Liu
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Sub-10 nm Scalability of Junctionless FETs Using a Ground Plane in High-K BOX: A Simulation Study
IEEE Access, 2020 The leakage mechanisms of inefficient volume depletion and lateral band to band tunneling (L-BTBT) restrict the scaling of SOI-junctionless (JL) FETs. Therefore, in this article, we investigate the scalability of the SOI-JLFETs by incorporating a ground ...
Aakash Kumar Jain +1 more
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Steep Switching Characteristics of L-Shaped Tunnel FET With Doping Engineering
IEEE Journal of the Electron Devices Society, 2021 In this work, a L-shaped tunnel FET (TFET), which has the dominant tunneling current in the normal direction to the gate, is introduced with the doping engineering and its electrical characteristics are analyzed using TCAD device simulations.
Hyun Woo Kim, Daewoong Kwon
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Advanced Energy Materials, Volume 16, Issue 23, 17 June 2026.We identify two decisive levers for SAM interfaces: molecular design (carboxylic acid‐based, phosphonic acid, other anchoring chemistries, and polymeric SAMs) and mixing routes (co‐assembly, in situ assembly, pre‐ and post‐treatment). Coordinated tuning of headgroups and assembly pathways optimises energy alignment and film formation, suppresses ...
Jiaxu Zhang, Bochun Kang, Feng Yan
wiley +1 more source