Results 41 to 50 of about 86,770,437 (171)
FlexMat, EarlyView.Different wavelength photonic synapses are used for biomimetic visual applications. Abstract Bionic intelligent visual perception systems have significant application prospects in fields such as autonomous driving and robotics, medical imaging and auxiliary diagnosis, security and monitoring.
Longlong Jiang +6 more
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Ternary CMOS Compact Model for Low Power On-Chip Memory Applications
IEEE Journal of the Electron Devices SocietyIn this work, we present a tunneling based ternary CMOS (T-CMOS) compact model for low power ternary-SRAM (T-SRAM) design using CMOS technology. By designing compact model parameters of band-to-band tunneling current $(I_{\mathrm { BTBT}})$ according ...
Young-Eun Choi +5 more
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A nonvolatile bidirectional reconfigurable FET based on S/D self programmable floating gates.
PLoS ONE, 2023 A nanoscale nonvolatile bidirectional reconfigurable field effect transistor (NBRFET) based on source /drain (S/D) self programmable floating gates is proposed.
Xiaoshi Jin, Shouqiang Zhang, Xi Liu
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The Evolution of Metal Halide Perovskite Transistors
Rare Metals, Volume 45, Issue 9, September 2026.ABSTRACT Metal halide perovskites (MHPs) offer a revolutionary pathway for next‐generation field‐effect transistors (FETs) because of their exceptional carrier mobilities and cost‐effective processability. However, their transition to practical electronics is significantly challenged by intrinsic instability and imbalanced charge transport. This review
Jiangnan Xia +8 more
wiley +1 more source
Operation Mechanism of a MoS2/BP Heterojunction FET
Nanomaterials, 2018 The electrical characteristics and operation mechanism of a molybdenum disulfide/black phosphorus (MoS2/BP) heterojunction device are investigated herein. Even though this device showed a high on-off ratio of over 1 × 107, with a lower subthreshold
Sung Kwan Lim +5 more
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Role of Quasi-Fermi potential in modeling III-V TFETs: InAs as a case study
Ain Shams Engineering Journal, 2023 TFET accurate physically based models are highly required to analyze and predict the device characteristics for its future utilization in circuits.
Ahmed Shaker +5 more
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From Doping to Polarity Control: Transport Switching in Silicon Nanowire Field‐Effect Transistors
physica status solidi (a), Volume 223, Issue 15, 5 August 2026.Junctionless nanowire transistors (JNTs) based on phosphorus‐doped silicon demonstrate electrostatic polarity control, ambipolar and unipolar modes, and scalable short‐channel performance. Tunable gate configurations and doping levels enable high on/off ratios and CMOS compatibility, highlighting JNTs as promising candidates for reconfigurable, next ...
Sayantan Ghosh +7 more
wiley +1 more source
Steep switching in trimmed-gate tunnel FET
AIP Advances, 2018 We propose a tunnel field-effect transistor (TFET) having a trimmed gate (TG) structure, which considerably improves the subthreshold swing (SS). The TG structure truncates the needless long band-to-band tunneling (BTBT) paths to a “channel”, which ...
Hidehiro Asai +5 more
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Strained Si and SiGe Nanowire Tunnel FETs for Logic and Analog Applications
IEEE Journal of the Electron Devices Society, 2015 Guided by the Wentzel-Kramers-Brillouin approximation for band-to-band tunneling (BTBT), various performance boosters for Si TFETs are presented and experimentally verified.
Qing-Tai Zhao +11 more
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IEEE Journal of the Electron Devices Society, 2020 In this article, we propose a high Schottky barrier source/drain contacts based bilateral gate and assistant Gate controlled bidirectional tunnel field Effect transistor (HSB-BTFET).
Xi Liu +5 more
doaj +1 more source