Results 41 to 50 of about 573 (171)

Ternary CMOS Compact Model for Low Power On-Chip Memory Applications

IEEE Journal of the Electron Devices Society
In this work, we present a tunneling based ternary CMOS (T-CMOS) compact model for low power ternary-SRAM (T-SRAM) design using CMOS technology. By designing compact model parameters of band-to-band tunneling current $(I_{\mathrm { BTBT}})$ according ...
Young-Eun Choi, Woo-Seok Kim, Myoung Kim, Junyoung Park, Min Woo Ryu, Kyung Rok Kim   +5 more
doaj   +1 more source

Progress in Strain Engineering of 2D‐Integrated Heterostructures for Ultrasensitive Sensors

Advanced Science, Volume 13, Issue 33, 15 June 2026.
 . ABSTRACT Two‐dimensional (2D) integrated heterostructures have emerged as a cornerstone in the advancement of next‐generation sensor technologies. These heterostructures, which combine materials with different dimensionalities, have led to significant breakthroughs in sensing performance and device integration.
That Buu Ton, Tuan Sang Tran, Duc Khanh Tran, Van Thanh Dau, Dzung Viet Dao   +4 more
wiley   +1 more source

Deformation Potentials for Band-To-Band Tunneling in Silicon and Germanium from First Principles

, 2015
The deformation potentials for phonon-assisted band-to-band tunneling (BTBT) in silicon and germanium are calculated using a plane-wave density functional theory code. Using hybrid functionals, we obtain: D(TA) = 4.1 x 10⁸ eV/cm, D(TO) = 1.2 x 10⁹ eV/cm,
Vandenberghe, William G., Fischetti, Massimo V.   +1 more
core   +1 more source

Bandgap-dependent deviations of local and nonlocal from mixed band-to-band tunneling models

, 2016
The nonlocal electric field approach has been widely accepted for Kane’s band-to-band tunneling (BTBT) model to calculate, both analytically and numerically, the tunneling current in tunnel field-effect transistors (TFETs).
Dinh Sy Hien, Chun-Hsing Shih, Nguyễn, Đăng Chiến, Hoang Sy Duc   +3 more
core   +1 more source

Impact of Band-to-Band Tunneling in the Charge Trap Layer of NAND Flash Memory

IEEE Journal of the Electron Devices Society
This article investigates the impact of band-to-band tunneling (BTBT) occurring in the charge trap layer (CTL) of vertical NAND (V−NAND) flash memory under excessive erasure conditions and aggressive program operation. Strong local electric fields
Seongwoo Kim, Beomgeun Lee, Seungjae Baik, Myounggon Kang   +3 more
doaj   +1 more source

Operation Mechanism of a MoS2/BP Heterojunction FET

Nanomaterials, 2018
The electrical characteristics and operation mechanism of a molybdenum disulfide/black phosphorus (MoS2/BP) heterojunction device are investigated herein. Even though this device showed a high on-off ratio of over 1 × 107, with a lower subthreshold
Sung Kwan Lim, Soo Cheol Kang, Tae Jin Yoo, Sang Kyung Lee, Hyeon Jun Hwang, Byoung Hun Lee   +5 more
doaj   +1 more source

A Novel High Schottky Barrier Based Bilateral Gate and Assistant Gate Controlled Bidirectional Tunnel Field Effect Transistor

IEEE Journal of the Electron Devices Society, 2020
In this article, we propose a high Schottky barrier source/drain contacts based bilateral gate and assistant Gate controlled bidirectional tunnel field Effect transistor (HSB-BTFET).
Xi Liu, Kailu Ma, Yicheng Wang, Meile Wu, Jong-Ho Lee, Xiaoshi Jin   +5 more
doaj   +1 more source

Steep switching in trimmed-gate tunnel FET

AIP Advances, 2018
We propose a tunnel field-effect transistor (TFET) having a trimmed gate (TG) structure, which considerably improves the subthreshold swing (SS). The TG structure truncates the needless long band-to-band tunneling (BTBT) paths to a “channel”, which ...
Hidehiro Asai, Takahiro Mori, Takashi Matsukawa, Junichi Hattori, Kazuhiko Endo, Koichi Fukuda   +5 more
doaj   +1 more source

Toward 4R Electronics: Liquid‐Metal‐Enabled Thin Film, and Field‐Effect Transistors for Sustainability and E‐Waste Reduction

Advanced Materials Technologies, Volume 11, Issue 7, 6 April 2026.
The 4R principle—Resilience, Repairability, Recyclability, and Renewability—enables sustainable liquid‐metal transistors. LM materials provide stretchable, damage‐tolerant architectures, allow rapid circuit repair, permit full material recovery through dissolution, and support renewable fabrication cycles, forming a closed‐loop pathway toward ...
Elahe Parvini, Abdollah Hajalilou
wiley   +1 more source

Band-to-Band Tunneling Based Ultra-Energy-Efficient Silicon Neuron

, 2020
The human brain comprises about a hundred billion neurons connected through quadrillion synapses. Spiking neural networks (SNNs) take inspiration from the brain to model complex cognitive and learning tasks.
Mohapatra, Nihar R., Chavan, Tanmay, Ganguly, Udayan, Dutta, Sangya   +3 more
core   +1 more source