Results 31 to 40 of about 86,770,437 (171)

University Concert Band, University Symphonic Band, December 16, 1979

, 2018
Recorded during a live performance at Miller Auditorium, Western Michigan University, Kalamazoo, Michigan, December 16, 1979, program no. 142 of the Department of Music's 1979-1980 season.1st-4th works: University Concert Band, Gregory Talford, conductor.
Western Michigan University. Concert Band,
core   +2 more sources

TCAD Simulation Study of ESD Behavior of InGaAs/InP Heterojunction Tunnel FETs

Crystals, 2020
For the first time, we investigated the electrostatic discharge (ESD) behavior of an InGaAs/InP heterojunction tunneling field effect transistor (HTFET). The device structure in this study has a high on-state current without extra process steps.
Zhihua Zhu, Zhaonian Yang, Yingtao Zhang, Xiaomei Fan, Juin Jei Liou, Wenbing Fan   +5 more
doaj   +1 more source

Single-Charge Tunneling in Codoped Silicon Nanodevices

Nanomaterials, 2023
Silicon (Si) nano-electronics is advancing towards the end of the Moore’s Law, as gate lengths of just a few nanometers have been already reported in state-of-the-art transistors.
Daniel Moraru, Tsutomu Kaneko, Yuta Tamura, Taruna Teja Jupalli, Rohitkumar Shailendra Singh, Chitra Pandy, Luminita Popa, Felicia Iacomi   +7 more
doaj   +1 more source

Improving the Scalability of SOI-Based Tunnel FETs Using Ground Plane in Buried Oxide

IEEE Journal of the Electron Devices Society, 2019
Tunnel field-effect transistors (TFETs) are known to exhibit degraded electrical characteristics at smaller channel lengths, primarily due to direct source-to-drain band-to-band tunneling (BTBT).
Shelly Garg, Sneh Saurabh
doaj   +1 more source

A new line tunneling SiGe/Si iTFET with control gate for leakage suppression and subthreshold swing improvement

Discover Nano, 2023
This article presents a new line tunneling dominating metal–semiconductor contact-induced SiGe–Si tunnel field-effect transistor with control gate (CG-Line SiGe/Si iTFET). With a structure where two symmetrical control gates at the drain region are given
Jyi-Tsong Lin, Shao-Cheng Weng
doaj   +1 more source

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source

A Universal van der Waals Tunneling Injector for Monolayer CMOS

Advanced Materials, EarlyView.
A universal van der Waals injector unlocks polarity‐flexible tunneling contacts for monolayer CMOS. SnSe2, an intrinsically degenerate 2D semiconductor, establishes polarity‐specific band alignments with both WSe2 and MoS2 channels, enabling steep switching, high on/off ratios, and a unified route to low‐power 2D logic.
Hanbin Cho, Jing Huang, Seonguk Yang, Subin Im, Sangwoo Park, Jeongin Yeo, Sungyeon Kim, Gilhwan Do, Wenxuan Zhu, Soobeom Shin, Jongwon Lee, Yongjoon Shin, Do‐Sun Lee, Hu Young Jeong, Tae‐Eon Park, Jun Kang, Kyungmin Ko, Joonki Suh   +17 more
wiley   +1 more source

Advances and Perspectives in Graphene‐Based Quantum Dots Enabled Neuromorphic Devices

Advanced Science, EarlyView.
Graphene‐based QDs are zero‐dimensional carbon nanomaterials with pronounced quantum confinement and tunable electronic structures. Herein, we summarize their synthesis strategies and functionalization methods, and highlight their functional roles and operating mechanisms in devices, as well as recent advances in neuromorphic electronics. We anticipate
Yulin Zhen, Wei Zeng, Zherui Zhao, JiYu Zhao, Ziyan Huang, Zhuo Chen, Kui Zhou, Guanglong Ding, Su‐Ting Han, Ye Zhou   +9 more
wiley   +1 more source

Physics‐Based Compact Modeling of Advanced 3D Nanoscale Vertical NAND Flash Memory

Advanced Electronic Materials, EarlyView.
For advanced 3D NAND flash memory, a unified compact model for SPICE is proposed that spans from the intrinsic unit cell to the full string and captures the electrostatic coupling with adjacent inhibit strings. It can successfully predict read behavior, program/erase dynamics, and interactions between neighboring cells, reflecting array‐level behavior ...
Ilho Myeong, Seonho Shin, Ickhyun Song
wiley   +1 more source

Impact of Band-to-Band Tunneling in the Charge Trap Layer of NAND Flash Memory

IEEE Journal of the Electron Devices Society
This article investigates the impact of band-to-band tunneling (BTBT) occurring in the charge trap layer (CTL) of vertical NAND (V−NAND) flash memory under excessive erasure conditions and aggressive program operation. Strong local electric fields
Seongwoo Kim, Beomgeun Lee, Seungjae Baik, Myounggon Kang   +3 more
doaj   +1 more source