Results 31 to 40 of about 573 (171)
Direct Band-to-Band Tunneling in Reverse Biased MoS2 Nanoribbon p-n Junctions
, 2013 We investigate the direct band-to-band tunneling (BTBT) in a reverse biased molybdenum disulfide (MoS2) nanoribbon p-n junction by analyzing the complex band structure obtained from semiempirical extended Huckel method under relaxed and strained ...
Ghosh, Ram Krishna, Mahapatra, Santanu
core +1 more source
Improving the Scalability of SOI-Based Tunnel FETs Using Ground Plane in Buried Oxide
IEEE Journal of the Electron Devices Society, 2019 Tunnel field-effect transistors (TFETs) are known to exhibit degraded electrical characteristics at smaller channel lengths, primarily due to direct source-to-drain band-to-band tunneling (BTBT).
Shelly Garg, Sneh Saurabh
doaj +1 more source
Advanced Materials, EarlyView.The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj +8 more
wiley +1 more source
Advances and Perspectives in Graphene‐Based Quantum Dots Enabled Neuromorphic Devices
Advanced Science, EarlyView.Graphene‐based QDs are zero‐dimensional carbon nanomaterials with pronounced quantum confinement and tunable electronic structures. Herein, we summarize their synthesis strategies and functionalization methods, and highlight their functional roles and operating mechanisms in devices, as well as recent advances in neuromorphic electronics. We anticipate
Yulin Zhen +9 more
wiley +1 more source
Physics‐Based Compact Modeling of Advanced 3D Nanoscale Vertical NAND Flash Memory
Advanced Electronic Materials, EarlyView.For advanced 3D NAND flash memory, a unified compact model for SPICE is proposed that spans from the intrinsic unit cell to the full string and captures the electrostatic coupling with adjacent inhibit strings. It can successfully predict read behavior, program/erase dynamics, and interactions between neighboring cells, reflecting array‐level behavior ...
Ilho Myeong, Seonho Shin, Ickhyun Song
wiley +1 more source
, 2013 We propose a novel tri-state inverter based on junction band-to-band tunneling (BTBT)-enhanced nanoscale CMOS structure. By suppressing the gate-induced drain leakage (GIDL) current, an additional stable state, '1/2', can be generated with ...
Sunhae Shin +5 more
core +1 more source
A nonvolatile bidirectional reconfigurable FET based on S/D self programmable floating gates.
PLoS ONE, 2023 A nanoscale nonvolatile bidirectional reconfigurable field effect transistor (NBRFET) based on source /drain (S/D) self programmable floating gates is proposed.
Xiaoshi Jin, Shouqiang Zhang, Xi Liu
doaj +1 more source
Role of Quasi-Fermi potential in modeling III-V TFETs: InAs as a case study
Ain Shams Engineering Journal, 2023 TFET accurate physically based models are highly required to analyze and predict the device characteristics for its future utilization in circuits.
Ahmed Shaker +5 more
doaj +1 more source
Advanced Energy Materials, EarlyView.We identify two decisive levers for SAM interfaces: molecular design (carboxylic acid‐based, phosphonic acid, other anchoring chemistries, and polymeric SAMs) and mixing routes (co‐assembly, in situ assembly, pre‐ and post‐treatment). Coordinated tuning of headgroups and assembly pathways optimises energy alignment and film formation, suppresses ...
Jiaxu Zhang, Bochun Kang, Feng Yan
wiley +1 more source
Implementation of Band-to-Band Tunneling Phenomena in a Multisubband Ensemble Monte Carlo Simulator: Application to Silicon TFETs [PDF]
, 2017 TFETs are in the way to become an alternative to conventional MOSFETs due to the possibility of achieving low subthreshold swing (SS) combined with small OFF current levels which allows operation at low VDD.
Medina Bailón, Cristina +5 more
core +1 more source