Results 1 to 10 of about 1,665 (175)
F-Shaped Tunnel Field-Effect Transistor (TFET) for the Low-Power Application
Micromachines, 2019 In this report, a novel tunnel field-effect transistor (TFET) named ‘F-shaped TFET’ has been proposed and its electrical characteristics are analyzed and optimized by using a computer-aided design simulation.
Yoon Kim, Jang Hyun Kim, Garam Kim
exaly +4 more sources
IET Circuits, Devices and Systems, 2021 This article presents an investigation report of the effects of temperature variation in the range of 300 to 480 K on electrical performance parameters of conventional dual‐material double‐gate tunnel field effect transistor (DMDG‐TFET) and dual‐material
Satyendra Kumar
doaj +2 more sources
Optimization of Tunnel Field-Effect Transistor-Based ESD Protection Network
Crystals, 2021 The tunnel field-effect transistor (TFET) is a potential candidate for replacing the reverse diode and providing a secondary path in a whole-chip electrostatic discharge (ESD) protection network.
Zhihua Zhu +5 more
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Journal of Engineering Technology and Applied Physics, 2023 To meet the performance requirements of low power mobile devices, a device with a high ION/IOFF ratio at low-VDD is needed. TFETs are gaining popularity due to their low subthreshold slope and high transconductance compared to MOSFETs.
Tan Chun Fui, Ajay Kumar Singh
doaj +1 more source
Journal of Engineering Technology and Applied Physics, 2022 Although, dynamic power in portable mobile devices can be reduced by reducing power supply VDDon the cost of increased leakage current. Therefore, maintaining low leakage current in the device is serious issue for minimizing overall ...
Tan Chun Fui +2 more
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Investigation of Radiation Hardened TFET SRAM Cell for Mitigation of Single Event Upset
IEEE Journal of the Electron Devices Society, 2020 This study analyzes the soft error sensitivity of SRAM cell which employs double-gate tunnel field effect transistor (DG TFET). The mitigation technique for the data recovery after the heavy ion strike is discussed.
M. Pown, B. Lakshmi
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Fabrication and Electrical Characteristics of ZnSnO/Si Bilayer Tunneling Filed-Effect Transistors
IEEE Journal of the Electron Devices Society, 2019 We demonstrate improvement of electrical characteristics of a bilayer tunneling field effect transistor (TFET) composed of an n-type zinc-tin-oxide (ZnSnO) channel with superior thickness uniformity and a p-type Si source.
Kimihiko Kato +4 more
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Simulation Study of the Double-Gate Tunnel Field-Effect Transistor with Step Channel Thickness
Nanoscale Research Letters, 2020 Double-gate tunnel field-effect transistor (DG TFET) is expected to extend the limitations of leakage current and subthreshold slope. However, it also suffers from the ambipolar behavior with the symmetrical source/drain architecture.
Maolin Zhang +4 more
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A Novel Dopingless Fin-Shaped SiGe Channel TFET with Improved Performance
Nanoscale Research Letters, 2020 In this paper, a dopingless fin-shaped SiGe channel TFET (DF-TFET) is proposed and studied. To form a high-efficiency dopingless line tunneling junction, a fin-shaped SiGe channel and a gate/source overlap are induced.
Shupeng Chen +5 more
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IET Circuits, Devices and Systems, 2021 In this study, the authors propose a work function engineered (WFE) triple metal (TM) tunnel field‐effect transistor (TFET) device, which exhibits lower subthreshold slope (SS) and better on to off current ratio in comparison with conventional double ...
Ria Bose, Jatindra Nath Roy
doaj +1 more source