Results 1 to 10 of about 2,142 (219)
Study of line-TFET analog performance comparing with other TFET and MOSFET architectures [PDF]
Solid-State Electronics, 2017 Abstract In this work the Line-TFET performance is compared with MOSFET and Point-TFET devices, with different architectures (FinFET and GAA:Gate-All-Around) at both room and high temperatures. This analysis is based on the experimental basic analog parameters such as transconductance (gm), output conductance (gD) and intrinsic voltage gain (AV ...
João Antonio Martino +2 more
exaly +5 more sources
F-Shaped Tunnel Field-Effect Transistor (TFET) for the Low-Power Application
Micromachines, 2019 In this report, a novel tunnel field-effect transistor (TFET) named ‘F-shaped TFET’ has been proposed and its electrical characteristics are analyzed and optimized by using a computer-aided design simulation.
Garam Kim, Yoon Kim, Jang Hyun Kim
exaly +4 more sources
IET Circuits, Devices and Systems, 2021 This article presents an investigation report of the effects of temperature variation in the range of 300 to 480 K on electrical performance parameters of conventional dual‐material double‐gate tunnel field effect transistor (DMDG‐TFET) and dual‐material
Satyendra Kumar
doaj +2 more sources
Design of a gate-all-around arch-shaped tunnel-field-effect-transistor-based capacitorless DRAM [PDF]
Discover NanoIn this study, we designed and analyzed a single-transistor dynamic random-access memory (1 T-DRAM) based on an arch-shaped gate-all-around tunnel field-effect transistor (GAA ARCH-TFET), featuring an Si/SiGe heterostructure, for high-density memory ...
Seung Ji Bae +9 more
doaj +2 more sources
Novel Ge-Based Plasma TFET with High Rectification Efficiency for 2.45 GHz Microwave Wireless Weak Energy Transmission [PDF]
MicromachinesThe enhancement of rectification efficiency in 2.45 GHz microwave wireless weak energy transmission systems is centred on rectifier device selection.
Weifeng Liu, Sihan Bi, Jianjun Song
doaj +2 more sources
Optimization of Tunnel Field-Effect Transistor-Based ESD Protection Network
Crystals, 2021 The tunnel field-effect transistor (TFET) is a potential candidate for replacing the reverse diode and providing a secondary path in a whole-chip electrostatic discharge (ESD) protection network.
Zhihua Zhu +5 more
doaj +1 more source
Journal of Engineering Technology and Applied Physics, 2022 Although, dynamic power in portable mobile devices can be reduced by reducing power supply VDDon the cost of increased leakage current. Therefore, maintaining low leakage current in the device is serious issue for minimizing overall ...
Tan Chun Fui +2 more
doaj +1 more source
Journal of Engineering Technology and Applied Physics, 2023 To meet the performance requirements of low power mobile devices, a device with a high ION/IOFF ratio at low-VDD is needed. TFETs are gaining popularity due to their low subthreshold slope and high transconductance compared to MOSFETs.
Tan Chun Fui, Ajay Kumar Singh
doaj +1 more source
Performance Evaluation of Epitaxial Layer Based Gate Modulated TFET (GM-TFET) [PDF]
Silicon, 2021 Abstract This paper reports the performance of an epitaxial layer (ETL) based gate modulated (GM-TFET) through 3D Technology Computer Aided Design (TCAD) simulations. The architecture utilizes effects of both vertical tunneling and lateral tunneling phenomena to improve the device performance.
Rajesh Saha +3 more
openaire +1 more source
Investigation of Radiation Hardened TFET SRAM Cell for Mitigation of Single Event Upset
IEEE Journal of the Electron Devices Society, 2020 This study analyzes the soft error sensitivity of SRAM cell which employs double-gate tunnel field effect transistor (DG TFET). The mitigation technique for the data recovery after the heavy ion strike is discussed.
M. Pown, B. Lakshmi
doaj +1 more source