Results 1 to 10 of about 1,083 (193)
Controlling Drain Side Tunneling Barrier Width in Electrically Doped PNPN Tunnel FET
Micromachines, 2023 In this paper, we propose and investigate an electrically doped (ED) PNPN tunnel field effect transistor (FET), in which the drain side tunneling barrier width is effectively controlled to obtain a suppressed ambipolar current.
Chan Shan +4 more
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Micromachines, 2023 Biosensors based on tunnel FET for label-free detection in which a nanogap is introduced under gate electrode to electrically sense the characteristics of biomolecules, have been studied widely in recent years.
Haiwu Xie, Hongxia Liu
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1T Capacitor-Less DRAM Cell Based on Asymmetric Tunnel FET Design
IEEE Journal of the Electron Devices Society, 2015 In this work we propose and demonstrate the use of a Tunnel FET (TFET) as capacitorless DRAM cell based on TCAD simulations and experiments. We report more experimental results on Tunnel FETs implemented as a double-gate (DG) fully-depleted Silicon-On ...
Arnab Biswas, Adrian M. Ionescu
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A Novel Barrier Controlled Tunnel FET
IEEE Electron Device Letters, 2014 A novel structure of tunnel field-effect transistor (FET) is introduced with the gate composed of three segments of different work functions. The tunnel current is controlled by an in channel potential barrier as well as the source-channel tunnel ...
Sheng Chang, Yue Hu, Hongyu He
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IEEE Open Journal of NanotechnologyIn this paper, using calibrated simulation we have reported a dielectric modulated epitaxial tunnel layer TFET (DM ETL-TFET) for the label-free detection of biomolecules. We have shown that due to vertical tunneling direction, the ETL-TFET exhibits $\sim$
Kunal Aggarwal, Avinash Lahgere
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A Novel Tunnel FET Design With Stacked Source Configuration for Average Subthreshold Swing Reduction
IEEE Transactions on Electron Devices, 2016 In this paper, a novel heterostacked tunnel FET (HS-TFET) is proposed for steeper average subthreshold swing (SS). Different from conventional TFETs, HS-TFETs owns a stacked source configuration consisting of an upper source layer with a relatively ...
Chunlei Wu, Qianqian Huang
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IEEE Journal of the Electron Devices Society, 2020 Spiking neural networks (SNNs) have attracted considerable attention as next-generation neural networks. As SNNs consist of devices that have spike-timing-dependent plasticity (STDP) characteristics, STDP is one of the critical characteristics we need to
Hisashi Kino +2 more
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Analysis on Tunnel Field-Effect Transistor with Asymmetric Spacer
Applied Sciences, 2020 Tunnel field-effect transistor (Tunnel FET) with asymmetric spacer is proposed to obtain high on-current and reduced inverter delay simultaneously.
Hyun Woo Kim, Daewoong Kwon
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Steep Switching Characteristics of L-Shaped Tunnel FET With Doping Engineering
IEEE Journal of the Electron Devices Society, 2021 In this work, a L-shaped tunnel FET (TFET), which has the dominant tunneling current in the normal direction to the gate, is introduced with the doping engineering and its electrical characteristics are analyzed using TCAD device simulations.
Hyun Woo Kim, Daewoong Kwon
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Numerical Investigations of Nanowire Gate-All-Around Negative Capacitance GaAs/InN Tunnel FET
IEEE Access, 2022 We demonstrated a nanowire gate-all-around (GAA) negative capacitance (NC) tunnel field-effect transistor (TFET) based on the GaAs/InN heterostructure using TCAD simulation.
Abdullah Al Mamun Mazumder +3 more
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