Demonstration of Fin-Tunnel Field-Effect Transistor with Elevated Drain [PDF]
Micromachines, 2019 In this paper, a novel tunnel field-effect transistor (TFET) has been demonstrated. The proposed TFET features a SiGe channel, a fin structure and an elevated drain to improve its electrical performance. As a result, it shows high-level ON-state current (
Jang Hyun Kim +4 more
doaj +5 more sources
Reconfigurable signal modulation in a ferroelectric tunnel field-effect transistor [PDF]
Nature Communications, 2023 Reconfigurable transistors are an emerging device technology adding new functionalities while lowering the circuit architecture complexity. However, most investigations focus on digital applications.
Zhongyunshen Zhu +2 more
doaj +3 more sources
A Study on Dual-Gate Dielectric Face Tunnel Field-Effect Transistor for Ternary Inverter [PDF]
NanomaterialsIn this article, we propose a dual-gate dielectric face tunnel field-effect transistor (DGDFTFET) that can exhibit three different output voltage states.
Aoxuan Wang +4 more
doaj +3 more sources
High Performance Drain Engineered InGaN Heterostructure Tunnel Field Effect Transistor [PDF]
Micromachines, 2019 A drain engineered InGaN heterostructure tunnel field effect transistor (TFET) is proposed and investigated by Silvaco Atlas simulation. This structure uses an additional metal on the drain region to modulate the energy band near the drain/channel ...
Xiaoling Duan +6 more
doaj +3 more sources
High On-Current Ge-Channel Heterojunction Tunnel Field-Effect Transistor Using Direct Band-to-Band Tunneling [PDF]
Micromachines, 2019 The main challenge for tunnel field-effect transistors (TFETs) is achieving high on-current (Ion) and low subthreshold swing (SS) with reasonable ambipolar characteristics.
Garam Kim +3 more
doaj +4 more sources
A novel high-low-high Schottky barrier based bidirectional tunnel field effect transistor [PDF]
Heliyon, 2023 In this work, we proposed a novel High-Low-High Schottky barrier bidirectional tunnel field effect transistor (HLHSB-BTFET). Compared with previous technology which is named as High Schottky barrier BTFET (HSB-BTFET), the proposed HLHSB-BTFET requires ...
Xiaoshi Jin +4 more
doaj +2 more sources
A highly sensitive vertical plug-in source drain high Schottky barrier bilateral gate controlled bidirectional tunnel field effect transistor. [PDF]
PLoS ONE, 2023 In this article, we propose a highly sensitive vertically plug-in source drain contacts high Schottky barrier based bilateral gate and assistant gate controlled bidirectional tunnel field Effect transistor (VPISDC-HSB-BTFET).
Xi Liu +4 more
doaj +2 more sources
A Study on the Effect of the Structural Parameters and Internal Mechanism of a Bilateral Gate-Controlled S/D Symmetric and Interchangeable Bidirectional Tunnel Field Effect Transistor [PDF]
Nanoscale Research Letters, 2021 A bilateral gate-controlled S/D symmetric and interchangeable bidirectional tunnel field effect transistor (B-TFET) is proposed in this paper, which shows the advantage of bidirectional switching characteristics and compatibility with CMOS integrated ...
Xiaoshi Jin +5 more
doaj +2 more sources
F-Shaped Tunnel Field-Effect Transistor (TFET) for the Low-Power Application [PDF]
Micromachines, 2019 In this report, a novel tunnel field-effect transistor (TFET) named ‘F-shaped TFET’ has been proposed and its electrical characteristics are analyzed and optimized by using a computer-aided design simulation.
Seunghyun Yun +6 more
doaj +2 more sources
Simulation Study of the Double-Gate Tunnel Field-Effect Transistor with Step Channel Thickness [PDF]
Nanoscale Research Letters, 2020 Double-gate tunnel field-effect transistor (DG TFET) is expected to extend the limitations of leakage current and subthreshold slope. However, it also suffers from the ambipolar behavior with the symmetrical source/drain architecture.
Maolin Zhang +4 more
doaj +2 more sources