Results 41 to 50 of about 15,872,973 (276)

Fabrication of a submicron-channel organic field-effect transistor using a controllable electrospun single fibre as a shadow mask [PDF]

, 2011
We demonstrate a simple and versatile method for the fabrication of a submicron channel for an organic field-effect transistor (OFET) using a single electrospun fibre as a shadow mask.
Sakai, H, Ishii, Y, H Sakai, Y Ishii, Murata, H, H Murata   +5 more
core   +1 more source

Generation of STDP With Non-Volatile Tunnel-FET Memory for Large-Scale and Low-Power Spiking Neural Networks

IEEE Journal of the Electron Devices Society, 2020
Spiking neural networks (SNNs) have attracted considerable attention as next-generation neural networks. As SNNs consist of devices that have spike-timing-dependent plasticity (STDP) characteristics, STDP is one of the critical characteristics we need to
Hisashi Kino, Takafumi Fukushima, Tetsu Tanaka   +2 more
doaj   +1 more source

State of the art and perspectives of graphene field-effect transistor [PDF]

, 2022
openAnalisi scientifica dei transistor a effetto di campo in grafene. L’elaborato segue lo sviluppo e il percorso di vita in ambito elettronico di questo conosciuto materiale dalle ottime potenzialità a prima vista, ma con diverse criticità e ...
CESCHIN, MATTEO
core  

Drain Current Model for Double Gate Tunnel-FETs with InAs/Si Heterojunction and Source-Pocket Architecture

Nanomaterials, 2019
The practical use of tunnel field-effect transistors is retarded by the low on-state current. In this paper, the energy-band engineering of InAs/Si heterojunction and novel device structure of source-pocket concept are combined in a single tunnel field ...
Hongliang Lu, Bin Lu, Yuming Zhang, Yimen Zhang, Zhijun Lv   +4 more
doaj   +1 more source

Simulation of Dual-Material Hetero-Double Gate Tunnel Field Effect Transistor (TFET) in Sub-Micron Region

Journal of Engineering Technology and Applied Physics, 2023
To meet the performance requirements of low power mobile devices, a device with a high ION/IOFF ratio at low-VDD is needed. TFETs are gaining popularity due to their low subthreshold slope and high transconductance compared to MOSFETs.
Tan Chun Fui, Ajay Kumar Singh
doaj   +1 more source

Configurable Electrostatically Doped High Performance Bilayer Graphene Tunnel FET

IEEE Journal of the Electron Devices Society, 2016
A bilayer graphene-based electrostatically doped tunnel field-effect transistor (BED-TFET) is proposed. Unlike graphene nanoribbon TFETs in which the edge states deteriorate the OFF-state performance, BED-TFETs operate based on bandgaps induced by ...
Fan W. Chen, Hesameddin Ilatikhameneh, Gerhard Klimeck, Zhihong Chen, Rajib Rahman   +4 more
doaj   +1 more source

Sub-10nm tunnel field-effect transistor with graded Si/Ge heterojunction

, 2011
This study presents a new sub-10-nm tunnel field-effect transistor (TFET) with bandgap engineering using a graded Si/Ge heterojunction. Both the height and width of the tunneling barrier are highly controlled by applying gate voltages to ensure a near ...
Chun-Hsing Shih, Nguyễn, Đăng Chiến   +1 more
core   +1 more source

Single Grain Boundary Dopingless PNPN Tunnel FET on Recrystallized Polysilicon: Proposal and Theoretical Analysis

IEEE Journal of the Electron Devices Society, 2015
A single grain boundary dopingless PNPN tunnel field effect transistor (TFET) on recrystallized polycrystalline silicon is studied by varying the position of the grain boundary in the channel.
Mamidala Saketh Ram, Dawit Burusie Abdi
doaj   +1 more source

Tunnel field-effect transistor without gate-drain overlap

, 2007
Tunnel field-effect transistors are promising successors of metal-oxide-semiconductor field-effect transistors because of the absence of short-channel effects and of a subthreshold-slope limit.
Vandenberghe, William, Groeseneken, Guido, Guido Groeseneken, William G. Vandenberghe, Karen Maex, Anne S. Verhulst, Maex, Karen, Verhulst, Anne   +7 more
core   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source