Results 51 to 60 of about 2,904 (271)

Single Grain Boundary Dopingless PNPN Tunnel FET on Recrystallized Polysilicon: Proposal and Theoretical Analysis

IEEE Journal of the Electron Devices Society, 2015
A single grain boundary dopingless PNPN tunnel field effect transistor (TFET) on recrystallized polycrystalline silicon is studied by varying the position of the grain boundary in the channel.
Mamidala Saketh Ram, Dawit Burusie Abdi
doaj   +1 more source

Tunnel field effect transistor (TFET) with lateral oxidation

, 2011
A vertical-mode tunnel field-effect transistor (TFET) is provided with an oxide region that may be laterally positioned relative to a source region.
Lee, Jack C., Zhao, Han
core   +1 more source

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source

In-plane tunnelling field-effect transistor integrated on Silicon [PDF]

Scientific Reports, 2015
AbstractSilicon has persevered as the primary substrate of microelectronics during last decades. During last years, it has been gradually embracing the integration of ferroelectricity and ferromagnetism. The successful incorporation of these two functionalities to silicon has delivered the desired non-volatility via charge-effects and giant magneto ...
Fina, Ignasi, Apachitei, Geanina, Preziosi, Daniele, Deniz, Hakan, Kriegner, Dominik, Martí Rovirosa, Xavier, Alexe, Marin   +6 more
openaire   +4 more sources

Nanoscale tunnel field-effect transistor based on a complex-oxide lateral heterostructure [PDF]

, 2019
We demonstrate a tunnel field-effect transistor based on a lateral heterostructure patterned from an LaAlO3/SrTiO3 electron gas. Charge is injected by tunneling from the LaAlO3/SrTiO3 contacts and the current through a narrow channel of insulating SrTiO3
Şahin, C., Fuhrmann, B., Minhas, M.Z., Schmidt, OG, Müller, A., Flatté, M.E., Minhas, M Z, Fuhrmann, B, Schmidt, G., Müller, A, Flatté, ME Michael, Şahin, C   +11 more
core   +1 more source

Enhanced Terahertz Thermoelectricity Via Engineered Van Hove Singularities and Nernst Effect in Moiré Superlattices

Advanced Functional Materials, EarlyView.
Moiré band engineering in graphene/hexagonal boron nitride–based superlattices unlocks van Hove singularities (VHSs) for terahertz (THz) optoelectronics. Tuning the Fermi level near these singularities, associated with secondary neutrality points (SNPs), enhances the photothermoelectric response.
Leonid Elesin, Arthur L. Shilov, Subhajit Jana, Ilya Mazurenko, Pierre A. Pantaleon, Mikhail Kashchenko, Nikita Krivovichev, Viacheslav Dremov, Igor Gayduchenko, Takashi Taniguchi, Kenji Watanabe, Yibo Wang, Kostya S. Novoselov, Dmitry A. Svintsov, Grigory Goltsman, Elena I. Titova, Denis A. Bandurin   +16 more
wiley   +1 more source

SymFET: A Proposed Symmetric Graphene Tunneling Field-Effect Transistor [PDF]

IEEE Transactions on Electron Devices, 2012
In this work, an analytical model to calculate the channel potential and current-voltage characteristics in a Symmetric tunneling Field-Effect-Transistor (SymFET) is presented. The current in a SymFET flows by tunneling from an n-type graphene layer to a p-type graphene layer.
Zhao, Pei, Feenstra, Randall M., Gu, Gong, Jena, Debdeep   +3 more
openaire   +2 more sources

Dopant-segregated metal source tunnel field-effect transistors with Schottky barrier and band-to-band tunneling

, 2017
Metallic junction engineering and tunnel field-effect architecture are the two major techniques to resolve the power dissipation issue of future transistor technologies.
Chun-Hsing Shih, Nguyễn, Đăng Chiến, Ting-Shiuan Kang, Hung-Jin Teng, Yu-Hsuan Chen   +4 more
core   +1 more source

Oxygen‐Tunnel Indium Tin Oxide Vertical Channel Transistors with Enhanced Current Density and Reliability for Monolithic 3D Compute‐In‐Memory Systems

Advanced Functional Materials, EarlyView.
Oxygen‐tunnel (OT) indium tin oxide (ITO) vertical channel transistors (VCTs) enable reliable, high‐density gain‐cell memory for monolithic 3D integration. A sandwiched SiN/SiO2/SiN OT stack selectively regulates oxygen transport, suppressing parasitic electrode oxidation while stabilizing channel oxygen vacancies, thereby suppressing carrier injection
Hyeonho Gu, Haksoon Jung, Yongwoo Lee, Hoichang Jeong, Yanfeng Zhao, Heesoo Yang, Minho Park, Hyeonjin Lee, Seunghun Baek, Minju Song, Junghwan Kim, Youngmin Jo, Hyunjin Park, Munhyeon Kim, Jae‐Joon Kim, Kyuho Jason Lee, Byungjo Kim, Jimin Kwon   +17 more
wiley   +1 more source

FS-iTFET: advancing tunnel FET technology with Schottky-inductive source and GAA design

Discover Nano
In this paper, we introduce a novel Forkshape nanosheet Inductive Tunnel Field-Effect Transistor (FS-iTFET) featuring a Gate-All-Around structure and a full-line tunneling heterojunction channel.
Jyi-Tsong Lin, Wei-Heng Tai
doaj   +1 more source