Results 71 to 80 of about 2,904 (271)

Opportunities of Semiconducting Oxide Nanostructures as Advanced Luminescent Materials in Photonics

Advanced Materials, EarlyView.
The review discusses the challenges of wide and ultrawide bandgap semiconducting oxides as a suitable material platform for photonics. They offer great versatility in terms of tuning microstructure, native defects, doping, anisotropy, and micro‐ and nano‐structuring. The review focuses on their light emission, light‐confinement in optical cavities, and
Ana Cremades, Pedro Hidalgo, David Maestre, Ruth Martínez‐Casado, Emilio Nogales, Beatriz Rodríguez, G. Cristian Vásquez, Bianchi Méndez   +7 more
wiley   +1 more source

Switching performance assessment of gate-all-around InAs–Si vertical TFET with triple metal gate, a simulation study

Discover Nano, 2023
This study presents a gate-all-around InAs–Si vertical tunnel field-effect transistor with a triple metal gate (VTG-TFET). We obtained improved switching characteristics for the proposed design because of the improved electrostatic control on the channel
Dariush Madadi, Saeed Mohammadi
doaj   +1 more source

Characterization of silicon tunnel field effect transistor based on charge plasma

, 2022
The aim of the proposed paper is an analytical model and realization of the characteristics for tunnel field-effect transistor (TFET) based on charge plasma (CP). One of the most applications of the TFET device which operates based on CP technique is the
Taha, Faris Hassan, Abdul-kadir, Firas Natheer   +1 more
core   +1 more source

Large‐Area 2D Metasurface‐Based Triboelectric E‐Skin Arrays: Contact & Proximity Tactile Mapping with Broadband Acoustic Readouts

Advanced Materials, EarlyView.
Metasurface‐engineered NC‐TENG arrays integrate tactile pressure mapping, non‐contact gesture sensing, and acoustic signal readouts in one ultrathin module, and outperforms pristine PDMS in terms of electrical output and real‐time spatial mapping for next‐gen wearables.
Injamamul Arief, Swagato Sarkar, Anik Kumar Ghosh, Osvalds Verners, Kamal Kumar Meena, Su‐Hyeong Lee, Soosang Chae, Tobias A. F. König, Beate Krause, Andreas Fery, Mehmet Sait Özer, Anindya Nag, Amit Das   +12 more
wiley   +1 more source

Improvements in reliability and radio frequency performance of junctionless tunnelling field effect transistor using p+ pocket and metal strip

IET Circuits, Devices and Systems, 2023
In this article, a new p+ pocket stacked gate oxide junctionless tunnelling field effect transistor (junction less tunnelling field effect transistor (JLTFET)) which has metal strip in gate oxide layer is proposed for analogue/RF circuit applications ...
Alireza Zirak
doaj   +1 more source

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source

Improvement of Tunnel Field Effect Transistor Performance Using Auxiliary Gate and Retrograde Doping in the Channel [PDF]

Journal of Electrical and Computer Engineering Innovations, 2018
Background and Objectives: In this work, a dual workfunction gate-source pocket-retrograde doping-tunnel field effect transistor (DWG SP RD-TFET) is proposed and investigated.Methods: The dual workfunction gate-source pocket-retrograde doping-tunnel ...
M. Karbalaei, D. Dideban, N. Moezi
doaj   +1 more source

Rethinking Charge Transport and Recombination in Donor‐Diluted Organic Solar Cells

Advanced Materials, EarlyView.
Organic solar cells with 1–45% PM6 content in Y12 were studied to link structure and charge dynamics to performance. The conductivity follows a 3D percolation model without a sharp threshold. Donor dilution preserves the photogeneration yield, but limits the fill factor due to transport resistance losses.
Chen Wang, Christopher Wöpke, Toni Seiler, Jared Faisst, Mathias List, Meike Kuhn, Bekcy Joseph, Alexander Ehm, Dietrich R. T. Zahn, Yana Vaynzof, Eva M. Herzig, Roderick C. I. Mackenzie, Uli Würfel, Maria Saladina, Carsten Deibel   +14 more
wiley   +1 more source

Performance Projections for a Reconfigurable Tunnel NanoFET

IEEE Journal of the Electron Devices Society, 2017
Theoretical performance projections of a reconfigurable tunnel (RT) field-effect transistor (FET) employing multiple parallel 1-D channels are given. The RT-nanoFET can be reconfigured on demand from pto n-type and from low power (LP) to high performance
Stefan Blawid, Denise L. M. de Andrade, Sven Mothes, Martin Claus   +3 more
doaj   +1 more source

Si/Ge hetero-structure nanotube tunnel field effect transistor

, 2015
We discuss the physics of conventional channel material (silicon/germanium hetero-structure) based transistor topology mainly core/shell (inner/outer) gated nanotube vs. gate-all-around nanowire architecture for tunnel field effect transistor application.
A. N. Hanna, Hanna, Amir, Hussain, Muhammad Mustafa, M. M. Hussain   +3 more
core   +1 more source