Results 71 to 80 of about 15,872,973 (276)
IET Circuits, Devices and Systems, 2023 In this article, a new p+ pocket stacked gate oxide junctionless tunnelling field effect transistor (junction less tunnelling field effect transistor (JLTFET)) which has metal strip in gate oxide layer is proposed for analogue/RF circuit applications ...
Alireza Zirak
doaj +1 more source
Battery-Inspired Electrochemical Synapses for Neuromorphic Applications. [PDF]
Adv Sci (Weinh)Battery‐ion‐inspired synaptic devices integrate diverse electrolyte systems (solid, ion‐gel, liquid) with transition metal oxides, two‐dimensional materials, and organic channels to regulate ion‐electron coupling. By tailoring ion transport and host interactions, these platforms enable controllable plasticity and energy‐efficient implementations for ...
Lee WW +6 more
europepmc +2 more sources
“Smelltronics”—From Gas to Smell Sensing
Advanced Materials, EarlyView.The emerging field of smelltronics, encompassing sensing technologies for complex volatile organic compounds, holds significant potential for extracting valuable chemical information. It facilitates the noninvasive, real‐time monitoring of humans, food, and the environment.
Takeshi Ono +7 more
wiley +1 more source
Performance Projections for a Reconfigurable Tunnel NanoFET
IEEE Journal of the Electron Devices Society, 2017 Theoretical performance projections of a reconfigurable tunnel (RT) field-effect transistor (FET) employing multiple parallel 1-D channels are given. The RT-nanoFET can be reconfigured on demand from pto n-type and from low power (LP) to high performance
Stefan Blawid +3 more
doaj +1 more source
Improvement of Tunnel Field Effect Transistor Performance Using Auxiliary Gate and Retrograde Doping in the Channel [PDF]
Journal of Electrical and Computer Engineering Innovations, 2018 Background and Objectives: In this work, a dual workfunction gate-source pocket-retrograde doping-tunnel field effect transistor (DWG SP RD-TFET) is proposed and investigated.Methods: The dual workfunction gate-source pocket-retrograde doping-tunnel ...
M. Karbalaei, D. Dideban, N. Moezi
doaj +1 more source
Probabilistic Computing via Gate-Tunable Random Telegraph Noise. [PDF]
Adv Sci (Weinh)Intrinsic random telegraph noise in metal–oxide–semiconductor field‐effect transistors is harnessed to create gate‐tunable probabilistic bits. By modulating carrier‐trapping dynamics, the device produces stochastic binary outputs with a continuous bias‐to‐probability transfer.
Yun G +8 more
europepmc +2 more sources
Rethinking Charge Transport and Recombination in Donor‐Diluted Organic Solar Cells
Advanced Materials, EarlyView.Organic solar cells with 1–45% PM6 content in Y12 were studied to link structure and charge dynamics to performance. The conductivity follows a 3D percolation model without a sharp threshold. Donor dilution preserves the photogeneration yield, but limits the fill factor due to transport resistance losses.
Chen Wang +14 more
wiley +1 more source
, 2017 Metallic junction engineering and tunnel field-effect architecture are the two major techniques to resolve the power dissipation issue of future transistor technologies.
Chun-Hsing Shih +4 more
core +1 more source
Nanoscale tunnel field-effect transistor based on a complex-oxide lateral heterostructure [PDF]
, 2019 We demonstrate a tunnel field-effect transistor based on a lateral heterostructure patterned from an LaAlO3/SrTiO3 electron gas. Charge is injected by tunneling from the LaAlO3/SrTiO3 contacts and the current through a narrow channel of insulating SrTiO3
Şahin, C. +11 more
core +2 more sources
Tunnel field-effect transistors with graphene channels
, 2022 S.279-284The lack of an OFF-state has been the main obstacle to the application of graphene-based transistors in digital circuits. Recently vertical graphene tunnel field-effect transistors with a low OFF-state current have been reported; however, they ...
Lukichev, V.F. +5 more
core +1 more source