Results 71 to 80 of about 1,639 (228)

Advances and Perspectives in Graphene‐Based Quantum Dots Enabled Neuromorphic Devices

Advanced Science, EarlyView.
Graphene‐based QDs are zero‐dimensional carbon nanomaterials with pronounced quantum confinement and tunable electronic structures. Herein, we summarize their synthesis strategies and functionalization methods, and highlight their functional roles and operating mechanisms in devices, as well as recent advances in neuromorphic electronics. We anticipate
Yulin Zhen, Wei Zeng, Zherui Zhao, JiYu Zhao, Ziyan Huang, Zhuo Chen, Kui Zhou, Guanglong Ding, Su‐Ting Han, Ye Zhou   +9 more
wiley   +1 more source

Flexoelectricity in Photoconversion: Fundamentals, Materials, and Outlooks

Advanced Science, EarlyView.
Mechanical bending of a flexible cantilever induces a strain gradient in the photoactive material. The resulting flexoelectric field couples with photovoltaic and photoconductive effects, modulating charge generation, separation, and collection. A comparative analysis of oxide perovskites, halide perovskites, and two‐dimensional materials is presented,
Xiang Huang, Feng Li, Rongkun Zheng
wiley   +1 more source

Performance Analysis of a Steep-Slope Bi-Channel GaSb-GaAs Extended Source Tunnel Field Effect Transistor with Enhanced Band-to-Band Tunneling Current [PDF]

Journal of Applied Research in Electrical Engineering
This paper presents a comprehensive investigation of the electrical properties of a heterojunction tunnel field effect transistor with enhanced electrical tunneling current.
Zahra Ahangari
doaj   +1 more source

Neuromorphic Near‐Sensor and In‐Sensor Computing Enabled by Next‐Generation Material‐Based Sensors

Advanced Science, EarlyView.
This Review presents a structural framework that classifies neuromorphic sensing into near‐sensor and in‐sensor architectures, clarifying physical coupling between sensing and computation. The framework connects neural and synaptic device functions with recent advances in optical, mechanical, and chemical sensing, compares energy consumption and ...
Su Yeon Jung, Gwang Ya Kim, Sejin Kim, Hyunjong Seo, Se Gi Lee, Sang Min Won, Dongjoon Rhee, Joohoon Kang   +7 more
wiley   +1 more source

Sub-10-nm Asymmetric Junctionless Tunnel Field-Effect Transistors

IEEE Journal of the Electron Devices Society, 2014
This study presents a new asymmetric junctionless tunnel field-effect transistor (AJ-TFET) to scale TFETs into sub-10-nm regimes. The asymmetric junctionless p+ source/body and junctional n/p+ drain/body separately optimize the lateral source and drain ...
Chun-Hsing Shih, Nguyen Van Kien
doaj   +1 more source

Photoelectric‐Coupled Ferroelectric Heterojunctions for Ultrahigh NO2 Sensing With Polarization‐Memory‐Assisted Interfacial Modulation

Advanced Science, EarlyView.
This study demonstrates a Bi2WO6/SrBi2Ta2O9 heterojunction where light‐driven ferroelectric polarization reversal couples with persistent photoconductivity, enabling exclusive NO2 selective room‐temperature sensing. The device achieves a two‐order‐of‐magnitude sensitivity enhancement over an unpolarized device, a sub‐ppb detection limit, and robust ...
Liping Tan, Xuefeng Hu, Ming Zhou, Weiwei Qing, Along Li, Zilong Wang, Mudan Feng, Shuang Zhao, Xiaoliang Wang, Peipei Li, Yali Bi, Wei Zhang   +11 more
wiley   +1 more source

Electrically Tunable Piezotronic Transistor by Coupling Interface Polar Symmetry and Strain Gradient

Advanced Science, EarlyView.
A macroscale tip‐induced strain gradient generates bulk piezo‐charges in GaN, enabling bias‐controlled shielding and selective Schottky barrier modulation. This strain‐gradient piezotronic transistor exhibits electrically switchable high‐ and low‐sensitivity states, providing ultrahigh strain sensitivity and wide tunability for adaptive mechanical ...
Gongwei Hu, Xiaoming Dong, Yihan Zhang, Yong Chao, Menglu Li, Min Liu, Liqing Pan, Lijie Li, Wei Huang, Fobao Huang   +9 more
wiley   +1 more source

Nanoscale Optical Inhomogeneities From Compositional Segregation Within Individual GaN‐on‐Si Quantum Wells

Advanced Science, EarlyView.
This work visualizes local variations in luminescence and relates them to nanoscale chemical inhomogeneities in single InxGa1−xN quantum wells. We demonstrate that the elemental segregation is only inherent to quantum wells with high indium content. Density functional theory shows this to be the result of strain‐induced phase stabilization, explaining ...
Jing‐Yang Chung, Tara P. Mishra, Zackaria Mahfoud, Thomas E. Gage, Jianguo Wen, Katherine P. Rice, Isabelle Martin, Li Zhang, Govindo J. Syaranamual, Stephen J. Pennycook, Silvija Gradečak, Pieremanuele Canepa, Michel Bosman   +12 more
wiley   +1 more source

Giant tunnel electroresistance through a Van der Waals junction by external ferroelectric polarization

Nature Communications
The burgeoning interest in two-dimensional semiconductors stems from their potential as ultrathin platforms for next-generation transistors. Nonetheless, there persist formidable challenges in fully obtaining high-performance complementary logic ...
Guangdi Feng, Yifei Liu, Qiuxiang Zhu, Zhenyu Feng, Shengwen Luo, Cuijie Qin, Luqiu Chen, Yu Xu, Haonan Wang, Muhammad Zubair, Ke Qu, Chang Yang, Shenglan Hao, Fangyu Yue, Chungang Duan, Junhao Chu, Bobo Tian   +16 more
doaj   +1 more source

Electrically Doped PNPN Tunnel Field-Effect Transistor Using Dual-Material Polarity Gate with Improved DC and Analog/RF Performance. [PDF]

Micromachines (Basel), 2023
Shan C, Liu Y, Liu Y, Wang Y, Cai R, Su L.   +5 more
europepmc   +1 more source