Results 61 to 70 of about 1,639 (228)

A Universal van der Waals Tunneling Injector for Monolayer CMOS

Advanced Materials, EarlyView.
A universal van der Waals injector unlocks polarity‐flexible tunneling contacts for monolayer CMOS. SnSe2, an intrinsically degenerate 2D semiconductor, establishes polarity‐specific band alignments with both WSe2 and MoS2 channels, enabling steep switching, high on/off ratios, and a unified route to low‐power 2D logic.
Hanbin Cho, Jing Huang, Seonguk Yang, Subin Im, Sangwoo Park, Jeongin Yeo, Sungyeon Kim, Gilhwan Do, Wenxuan Zhu, Soobeom Shin, Jongwon Lee, Yongjoon Shin, Do‐Sun Lee, Hu Young Jeong, Tae‐Eon Park, Jun Kang, Kyungmin Ko, Joonki Suh   +17 more
wiley   +1 more source

Reducing the Impact of Reverse Currents in Tunnel FET Rectifiers for Energy Harvesting Applications

IEEE Journal of the Electron Devices Society, 2017
RF to dc passive rectifiers can benefit from the superior performance at low voltage of tunnel transistors. They have shown higher power conversion efficiency (PCE) at low input power than Si FinFETs counterparts.
Juan Nunez, Maria J. Avedillo
doaj   +1 more source

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

Advanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Fiorenza Esposito, Igor Píš, Federica Bondino, Antonino Madonia, Marco Cannas, Simonpietro Agnello, Luca Seravalli, Filippo Giannazzo   +12 more
wiley   +1 more source

Bandgap‐Dependent Band‐to‐Band Tunneling in Carbon Nanotube Transistors

Advanced Materials Interfaces, EarlyView.
We systematically investigate bandgap‐dependent BTBT in SWCNT transistors by comparing wide‐bandgap (6,5) (Eg≈1.13 eV), medium‐bandgap HiPco, and narrow‐bandgap Arc‐discharge (Eg≈0.59 eV) SWCNT networks. The narrow‐bandgap networks show stronger BTBT, higher off‐state leakage, and lower on/off ratio, while wide‐bandgap (6,5) devices suppress BTBT and ...
Yuxiang Wei, Yimin Lei, Peixian Li, Hong Wang, Meisen Yi, Qing Zhu, Jiejie Zhu, Zhen Zhang, Yang Yang, Xiaohua Ma, Yue Hao   +10 more
wiley   +1 more source

Switching Performance of Nanotube Core-Shell Heterojunction Electrically Doped Junctionless Tunnel Field Effect Transistor [PDF]

Journal of Optoelectronical Nanostructures, 2020
: In this paper, a novel tunnel field effect transistor (TFET) is introduced, thatdue to its superior gate controllability, can be considered as a promising candidate forthe conventional TFET. The proposed electrically doped heterojunction TFET(EDHJTFET)
Zahra Ahangari
doaj  

Grafted Low‐Leakage Si/AlN p‐n Diodes Enabled by Fluorinated AlN Interface

Advanced Materials Interfaces, EarlyView.
This work demonstrates a fluorination‐based interface engineering strategy that transforms oxygen‐terminated AlN surfaces into fluorine‐terminated interfaces for grafted p‐Si/n‐AlN diodes. By combining pseudo‐ALE oxide removal, XeF2 fluorination, and ultrathin SiNx stabilization, the engineered interface suppresses defect‐assisted reverse leakage by ...
Yi Lu, Tsung‐Han Tsai, Qingxiao Wang, Haicheng Cao, Jie Zhou, You Jin Koo, Chenyu Wang, Yang Liu, Yuyue Hao, Michael Eller, Connor Bailey, Stephanie Liu, Nicholas J. Tanen, Zhiyuan Liu, Mingtao Nong, Robert M. Jacobberger, Tien Khee Ng, Katherine Fountaine, Vincent Gambin, Boon S. Ooi, Xiaohang Li, Zhenqiang Ma   +21 more
wiley   +1 more source

Nano-biosensors with subthreshold swing tunnel field effect transistor: A cutting-edge review

Sensing and Bio-Sensing Research
A thorough investigation into the development and performance assessment of biosensors that utilize Tunnel Field Effect Transistors (TFETs), showcasing a departure from conventional bio-sensing approaches is carried out.
M. Poorna Sundari, G. Lakshmi Priya
doaj   +1 more source

Rigorous Study on Hump Phenomena in Surrounding Channel Nanowire (SCNW) Tunnel Field-Effect Transistor (TFET)

Applied Sciences, 2020
In this paper, analysis and optimization of surrounding channel nanowire (SCNW) tunnel field-effect transistor (TFET) has been discussed with the help of technology computer-aided design (TCAD) simulation.
Seung-Hyun Lee, Jeong-Uk Park, Garam Kim, Dong-Woo Jee, Jang Hyun Kim, Sangwan Kim   +5 more
doaj   +1 more source

Generation of Probabilistic Bits by Exploiting Orthogonal Spin Currents in Magnetic Trilayers

Advanced Science, EarlyView.
Fe/Ti/CoFeB trilayers generate orthogonal spin currents that drive stochastic spin–orbit‐torque switching for probabilistic‐bit operation. The switching probability is continuously controlled by the in‐plane magnetic field and drive current, enabling tunable random bit generation.
Donghyeon Han, Chaehyeon Shin, Seok‐Jong Kim, Yunho Jang, Daekyu Koh, Taehwan Kim, Jaeheon Jung, Geon‐Woo Baek, Minseok Kang, Eunseok Kim, Geun‐Hee Lee, Jeongchun Ryu, Makoto Kohda, Junsaku Nitta, Kab‐Jin Kim, Jongsun Park, Kyung‐Jin Lee, Byong‐Guk Park   +17 more
wiley   +1 more source

Ferroelectric Devices for In‐Memory and In‐Sensor Computing

Advanced Science, EarlyView.
Inspired by biological systems, in‐memory and in‐sensor computing overcome von Neumann bottlenecks. Ferroelectric devices can mimic synaptic functions and sense stimuli like light or force, therefore are ideal for these paradigms. This review introduces the ferroelectric devices applied for in‐memory and in‐sensor computing, covering their structures ...
Hong Fang, Ronghuan Xie, Qiang Cao, Shishen Yan, Xiaolin Wang, Limei Zheng   +5 more
wiley   +1 more source