Results 1 to 10 of about 86,811,437 (336)

High On-Current Ge-Channel Heterojunction Tunnel Field-Effect Transistor Using Direct Band-to-Band Tunneling [PDF]

Micromachines, 2019
The main challenge for tunnel field-effect transistors (TFETs) is achieving high on-current (Ion) and low subthreshold swing (SS) with reasonable ambipolar characteristics.
Garam Kim, Jaehong Lee, Jang Hyun Kim, Sangwan Kim   +3 more
doaj   +5 more sources

Large Variation in Temperature Dependence of Band-to-Band Tunneling Current in Tunnel Devices

IEEE Electron Device Letters, 2019
The observation of a significant temperature-dependent variation in the ${I}$ – ${V}$ characteristics of tunneling devices is often interpreted as a signature of a trap-assisted-tunneling dominated current. In this letter, we use a ballistic 2D quantum-mechanical simulator, calibrated using the measured temperature-dependent ${I ...
Jasper Bizindavyi, Devin Verreck
exaly   +5 more sources

Band‐to‐Band Tunneling Control by External Forces: A Key Principle and Applications

Advanced Electronic Materials, 2023
Band‐to‐band tunneling (BTBT) devices with superior subthreshold swing directly related to on/off switching speed and power consumption efficiency have emerged as a breakthrough of the limitation in conventional metal‐oxide‐semiconductor field‐effect ...
Gunhoo Woo, Taesung Kim, Hocheon Yoo
doaj   +2 more sources

Interlayer Band‐to‐Band Tunneling and Negative Differential Resistance in van der Waals BP/InSe Field‐Effect Transistors [PDF]

Advanced Functional Materials, 2020
Atomically thin layers of van der Waals (vdW) crystals offer an ideal material platform to realize tunnel field‐effect transistors (TFETs) that exploit the tunneling of charge carriers across the forbidden gap of a vdW heterojunction. This type of device
Nobuya Mori, Kaiyou Wang, Faguang Yan
exaly   +2 more sources

Band-to-Band Tunneling Based Ultra-Energy-Efficient Silicon Neuron [PDF]

IEEE Transactions on Electron Devices, 2020
The human brain comprises about a hundred billion neurons connected through quadrillion synapses. Spiking Neural Networks (SNNs) take inspiration from the brain to model complex cognitive and learning tasks. Neuromorphic engineering implements SNNs in hardware, aspiring to mimic the brain at scale (i.e., 100 billion neurons) with biological area and ...
Tanmay Chavan, Sangya Dutta, Nihar R. Mohapatra, Udayan Ganguly   +3 more
openaire   +5 more sources

A resilient type-III broken gap Ga2O3/SiC van der Waals heterogeneous bilayer with band-to-band tunneling effect and tunable electronic property [PDF]

Scientific Reports
The potential of van der Waals (vdW) heterostructure to incorporate the outstanding features of stacked materials to meet a variety of application requirements has drawn considerable attention.
Naim Ferdous, Md. Sherajul Islam, Jeongwon Park   +2 more
doaj   +2 more sources

Gate-tunable negative differential resistance in multifunctional van der Waals heterostructure [PDF]

Scientific Reports
Two-dimensional (2D) semiconductors have emerged as exciting candidates for the development of low-power and multifunctional computing applications, thanks to their qualities such as layer-dependent band gap tunability, high carrier mobility, and ...
Richa Mitra, Konstantina Iordanidou, Naveen Shetty, Md Anamul Hoque, Anushree Datta, Alexei Kalaboukhov, Julia Wiktor, Sergey Kubatkin, Saroj Prasad Dash, Samuel Lara-Avila   +9 more
doaj   +2 more sources

Bandgap‐Dependent Band‐to‐Band Tunneling in Carbon Nanotube Transistors

Advanced Materials Interfaces
Single‐walled carbon nanotubes (SWCNTs) are considered promising channel materials for post‐Moore nanoelectronics due to their excellent carrier transport properties.
Yuxiang Wei, Yimin Lei, Peixian Li, Hong Wang, Meisen Yi, Qing Zhu, Jiejie Zhu, Zhen Zhang, Yang Yang, Xiaohua Ma, Yue Hao   +10 more
doaj   +2 more sources

Reliability assessment of Z-shaped gate TFET under interface trap charges and thermal variations for low-power applications [PDF]

Scientific Reports
This work investigates the reliability of a Z-shaped gate elevated-source TFET (ZG-ES-TFET) by examining the effects of interface trap charges (ITCs) and ambient temperature variations on its DC and analog/RF performance.
Tammisetti Ashok, Chandan Kumar Pandey
doaj   +2 more sources

Three Temperature Regimes in Subthreshold Characteristics of FD-SOI pMOSFETs From Room-Temperature to Cryogenic Temperatures

IEEE Journal of the Electron Devices Society, 2023
We reported three temperature regimes in subthreshold characteristics of 22-nm FD-SOI p-MOSFETs at operation ${T}\,\,=$ 300 K – 4.5 K. Subthreshold swing (SS)-plateau at 125 K – 50 K in combination with SS-linearity at ${T}\,\,=$ 300 K &
Yo-Ming Chang, Ting Tsai, Yu-Wen Chiu, Horng-Chih Lin, Pei-Wen Li   +4 more
doaj   +1 more source