Results 1 to 10 of about 720 (167)
Band‐to‐Band Tunneling Control by External Forces: A Key Principle and Applications
Advanced Electronic Materials, 2023 Band‐to‐band tunneling (BTBT) devices with superior subthreshold swing directly related to on/off switching speed and power consumption efficiency have emerged as a breakthrough of the limitation in conventional metal‐oxide‐semiconductor field‐effect ...
Gunhoo Woo, Taesung Kim, Hocheon Yoo
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Micromachines, 2019 The main challenge for tunnel field-effect transistors (TFETs) is achieving high on-current (Ion) and low subthreshold swing (SS) with reasonable ambipolar characteristics.
Garam Kim +3 more
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IEEE Journal of the Electron Devices Society, 2023 We reported three temperature regimes in subthreshold characteristics of 22-nm FD-SOI p-MOSFETs at operation ${T}\,\,=$ 300 K – 4.5 K. Subthreshold swing (SS)-plateau at 125 K – 50 K in combination with SS-linearity at ${T}\,\,=$ 300 K &
Yo-Ming Chang +4 more
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Investigation of Tunneling Effect for a N-Type Feedback Field-Effect Transistor
Micromachines, 2022 In this paper, the tunneling effect for a N-type feedback field-effect transistor (NFBFET) was investigated. The NFBFET has highly doped N-P junction in the channel region.
Jong Hyeok Oh, Yun Seop Yu
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A Study on Dominant Mechanism and Analytical Model of Low-Frequency Noise in FD-SOI pTFET
IEEE Journal of the Electron Devices Society, 2022 The origin of low-frequency noise (LFN) properties and the accuracy of LFN model were demonstrated in a fully depleted silicon-on-insulator p-type tunneling field-effect transistor (pTFET).
Hyun-Jin Shin +7 more
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Micromachines, 2023 In this paper, a new SiGe/Si heterojunction double-gate heterogate dielectric tunneling field-effect transistor with an auxiliary tunneling barrier layer (HJ-HD-P-DGTFET) is proposed and investigated using TCAD tools. SiGe material has a smaller band gap
Qing Chen +7 more
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Integration of resonant band with asymmetry in ferroelectric tunnel junctions
npj Computational Materials, 2022 We propose that the asymmetry-induced tunneling electroresistance (TER) effect in a ferroelectric tunnel junction (FTJ) could be improved by integrating a polarization-controlled resonant band. Using first-principles calculations and a quantum-mechanical
Jing Su +4 more
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Nano-buffer controlled electron tunneling to regulate heterojunctional interface emission
Opto-Electronic Advances, 2021 Interface emission from heterojunction is a shortcoming for electroluminescent devices. A buffer layer introduced in the heterojunctional interfaces is a potential solution for the challenge.
Wei Liu +5 more
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Crystals, 2022 Models describing the tunneling of electrons and holes through parabolic InxGa1−xN/GaN quantum well/LED structures with respect to strain were developed. The transmission coefficient, tunneling lifetime, and efficiency of LED structures were evaluated by
Hind Althib
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A Novel L-Gate InGaAs/GaAsSb TFET with Improved Performance and Suppressed Ambipolar Effect
Micromachines, 2022 A heterojunction tunneling field effect transistor with an L-shaped gate (HJ-LTFET), which is very applicable to operate at low voltage, is proposed and studied by TCAD tools in this paper.
Boyang Ma +7 more
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