High On-Current Ge-Channel Heterojunction Tunnel Field-Effect Transistor Using Direct Band-to-Band Tunneling [PDF]
Micromachines, 2019 The main challenge for tunnel field-effect transistors (TFETs) is achieving high on-current (Ion) and low subthreshold swing (SS) with reasonable ambipolar characteristics.
Garam Kim +3 more
doaj +4 more sources
A resilient type-III broken gap Ga2O3/SiC van der Waals heterogeneous bilayer with band-to-band tunneling effect and tunable electronic property [PDF]
Scientific ReportsThe potential of van der Waals (vdW) heterostructure to incorporate the outstanding features of stacked materials to meet a variety of application requirements has drawn considerable attention.
Naim Ferdous +2 more
doaj +2 more sources
Large Variation in Temperature Dependence of Band-to-Band Tunneling Current in Tunnel Devices
IEEE Electron Device Letters, 2019 The observation of a significant temperature-dependent variation in the ${I}$ – ${V}$ characteristics of tunneling devices is often interpreted as a signature of a trap-assisted-tunneling dominated current. In this letter, we use a ballistic 2D quantum-mechanical simulator, calibrated using the measured temperature-dependent ${I ...
Jasper Bizindavyi, , Devin Verreck
exaly +4 more sources
Reliability assessment of Z-shaped gate TFET under interface trap charges and thermal variations for low-power applications [PDF]
Scientific ReportsThis work investigates the reliability of a Z-shaped gate elevated-source TFET (ZG-ES-TFET) by examining the effects of interface trap charges (ITCs) and ambient temperature variations on its DC and analog/RF performance.
Tammisetti Ashok, Chandan Kumar Pandey
doaj +2 more sources
Peroral endoscopic tunneling stricturotomy for diverticulum treatment: novel procedure for pediatric esophageal anastomotic diverticula [PDF]
VideoGIEBackground and Aims: This case details an 8-year-old female patient with a type C tracheoesophageal fistula and esophageal atresia who developed a symptomatic diverticulum proximal to an anastomotic scar band.
Taylor J. Kratochvil, MD, MS +4 more
doaj +2 more sources
IEEE Journal of the Electron Devices Society, 2023 We reported three temperature regimes in subthreshold characteristics of 22-nm FD-SOI p-MOSFETs at operation ${T}\,\,=$ 300 K – 4.5 K. Subthreshold swing (SS)-plateau at 125 K – 50 K in combination with SS-linearity at ${T}\,\,=$ 300 K &
Yo-Ming Chang +4 more
doaj +1 more source
Investigation of Tunneling Effect for a N-Type Feedback Field-Effect Transistor
Micromachines, 2022 In this paper, the tunneling effect for a N-type feedback field-effect transistor (NFBFET) was investigated. The NFBFET has highly doped N-P junction in the channel region.
Jong Hyeok Oh, Yun Seop Yu
doaj +1 more source
A Study on Dominant Mechanism and Analytical Model of Low-Frequency Noise in FD-SOI pTFET
IEEE Journal of the Electron Devices Society, 2022 The origin of low-frequency noise (LFN) properties and the accuracy of LFN model were demonstrated in a fully depleted silicon-on-insulator p-type tunneling field-effect transistor (pTFET).
Hyun-Jin Shin +7 more
doaj +1 more source
Band‐to‐Band Tunneling Control by External Forces: A Key Principle and Applications
Advanced Electronic Materials, 2023 Band‐to‐band tunneling (BTBT) devices with superior subthreshold swing directly related to on/off switching speed and power consumption efficiency have emerged as a breakthrough of the limitation in conventional metal‐oxide‐semiconductor field‐effect ...
Gunhoo Woo, Taesung Kim, Hocheon Yoo
doaj +1 more source
Micromachines, 2023 In this paper, a new SiGe/Si heterojunction double-gate heterogate dielectric tunneling field-effect transistor with an auxiliary tunneling barrier layer (HJ-HD-P-DGTFET) is proposed and investigated using TCAD tools. SiGe material has a smaller band gap
Qing Chen +7 more
doaj +1 more source