Results 11 to 20 of about 86,811,437 (336)

Band-to-band tunneling switches based on two-dimensional van der Waals heterojunctions

Applied Physics Reviews, 2023
Quantum mechanical band-to-band tunneling is a type of carrier injection mechanism that is responsible for the electronic transport in devices like tunnel field effect transistors (TFETs), which hold great promise in reducing the subthreshold swing below
P. Chava, Z. Fekri, Yagnika Vekariya, T. Mikolajick, A. Erbe   +4 more
semanticscholar   +1 more source

Investigation of Tunneling Effect for a N-Type Feedback Field-Effect Transistor

Micromachines, 2022
In this paper, the tunneling effect for a N-type feedback field-effect transistor (NFBFET) was investigated. The NFBFET has highly doped N-P junction in the channel region.
Jong Hyeok Oh, Yun Seop Yu
doaj   +1 more source

A Study on Dominant Mechanism and Analytical Model of Low-Frequency Noise in FD-SOI pTFET

IEEE Journal of the Electron Devices Society, 2022
The origin of low-frequency noise (LFN) properties and the accuracy of LFN model were demonstrated in a fully depleted silicon-on-insulator p-type tunneling field-effect transistor (pTFET).
Hyun-Jin Shin, Sunil Babu Eadi, Seong-Hyun Kim, Tae-Gyu Ryu, Yeong-Jin An, Do-Woo Kim, Hi-Deok Lee, Hyuk-Min Kwon   +7 more
doaj   +1 more source

Novel SiGe/Si Heterojunction Double-Gate Tunneling FETs with a Heterogate Dielectric for High Performance

Micromachines, 2023
In this paper, a new SiGe/Si heterojunction double-gate heterogate dielectric tunneling field-effect transistor with an auxiliary tunneling barrier layer (HJ-HD-P-DGTFET) is proposed and investigated using TCAD tools. SiGe material has a smaller band gap
Qing Chen, Rong Sun, Ruixia Miao, Hanxiao Liu, Lulu Yang, Zengwei Qi, Wei He, Jianwei Li   +7 more
doaj   +1 more source

Integration of resonant band with asymmetry in ferroelectric tunnel junctions

npj Computational Materials, 2022
We propose that the asymmetry-induced tunneling electroresistance (TER) effect in a ferroelectric tunnel junction (FTJ) could be improved by integrating a polarization-controlled resonant band. Using first-principles calculations and a quantum-mechanical
Jing Su, Jing Li, Xingwen Zheng, Shijie Xie, Xiaohui Liu   +4 more
doaj   +1 more source

Nano-buffer controlled electron tunneling to regulate heterojunctional interface emission

Opto-Electronic Advances, 2021
Interface emission from heterojunction is a shortcoming for electroluminescent devices. A buffer layer introduced in the heterojunctional interfaces is a potential solution for the challenge.
Wei Liu, Zhuxin Li, Zengliang Shi, Ru Wang, Yizhi Zhu, Chunxiang Xu   +5 more
doaj   +1 more source

Resonant Tunneling of Electrons and Holes through the In_xGa_1−xN/GaN Parabolic Quantum Well/LED Structure

Crystals, 2022
Models describing the tunneling of electrons and holes through parabolic InxGa1−xN/GaN quantum well/LED structures with respect to strain were developed. The transmission coefficient, tunneling lifetime, and efficiency of LED structures were evaluated by
Hind Althib
doaj   +1 more source

A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor

Scientific Reports, 2017
Steep-slope transistors allow to scale down the supply voltage and the energy per computed bit of information as compared to conventional field-effect transistors (FETs), due to their sub-60 mV/decade subthreshold swing at room temperature.
W. Vitale, E. Casu, A. Biswas, T. Rosca, Cem Alper, A. Krammer, G. V. Luong, Qing-Tai Zhao, S. Mantl, A. Schüler, A. Ionescu   +10 more
semanticscholar   +1 more source

Bilayer tunneling field effect transistor with oxide-semiconductor and group-IV semiconductor hetero junction: Simulation analysis of electrical characteristics

AIP Advances, 2019
Operation mechanisms and electrical characteristics of tunneling field-effect transistors (TFETs) employing a hetero tunneling junction by utilizing an n-type oxide-semiconductor (OS) and a p-type group-IV-semiconductor are comprehensibly analyzed.
Kimihiko Kato, Hiroaki Matsui, Hitoshi Tabata, Mitsuru Takenaka, Shinichi Takagi   +4 more
doaj   +1 more source

A Novel L-Gate InGaAs/GaAsSb TFET with Improved Performance and Suppressed Ambipolar Effect

Micromachines, 2022
A heterojunction tunneling field effect transistor with an L-shaped gate (HJ-LTFET), which is very applicable to operate at low voltage, is proposed and studied by TCAD tools in this paper.
Boyang Ma, Shupeng Chen, Shulong Wang, Tao Han, Hao Zhang, Chenyu Yin, Yaolin Chen, Hongxia Liu   +7 more
doaj   +1 more source