Results 11 to 20 of about 720 (167)

Bilayer tunneling field effect transistor with oxide-semiconductor and group-IV semiconductor hetero junction: Simulation analysis of electrical characteristics

AIP Advances, 2019
Operation mechanisms and electrical characteristics of tunneling field-effect transistors (TFETs) employing a hetero tunneling junction by utilizing an n-type oxide-semiconductor (OS) and a p-type group-IV-semiconductor are comprehensibly analyzed.
Kimihiko Kato, Hiroaki Matsui, Hitoshi Tabata, Mitsuru Takenaka, Shinichi Takagi   +4 more
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Ab initio simulation study of defect assisted Zener tunneling in GaAs diode

AIP Advances, 2017
The band to band tunneling of defective GaAs nano-junction is studied by using the non-equilibrium Green’s function formalism with density functional theory.
Juan Lu, Zhi-Qiang Fan, Jian Gong, Xiang-Wei Jiang   +3 more
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Analytical modeling of transport phenomena in heterojunction triple metal gate all around tunneling field effect transistor

AIP Advances, 2020
An analytical model for the transport phenomena of a heterojunction triple metal gate all around tunneling field effect transistor (HTM GAA TFET) is developed for the first time in this paper. The continuous surface potential profile of the staggered-gap
Marjana Mahdia, Quazi Deen Mohd Khosru
doaj   +1 more source

Tunnel Field-Effect Transistor: Impact of the Asymmetric and Symmetric Ambipolarity on Fault and Performance in Digital Circuits

Journal of Low Power Electronics and Applications, 2022
Tunnel Field-Effect Transistors (TFETs) have been considered one of the most promising technologies to complement or replace CMOS for ultra-low-power applications, thanks to their subthreshold slope below the well-known limit of 60 mV/dec at room ...
Chiara Elfi Spano, Fabrizio Mo, Roberta Antonina Claudino, Yuri Ardesi, Massimo Ruo Roch, Gianluca Piccinini, Marco Vacca   +6 more
doaj   +1 more source

Exploiting Within-Channel Tunneling in a Nanoscale Tunnel Field-Effect Transistor

IEEE Open Journal of Nanotechnology, 2020
In this paper, using device simulations, we investigate electrical characteristics of a tunnel field-effect transistor (TFET) in which band-to-band tunneling (BTBT) occurs dominantly within the channel, rather than at source-channel junction.
Shelly Garg, Sneh Saurabh
doaj   +1 more source

Comparative performance analysis of different gate structure engineering on double gate tunnel FET

Next Materials
Through band-to-band tunneling, Tunnel Field Effect Transistors (TFETs) reduce leakage and subthreshold swing, giving them an advantage over MOSFET. However, ambipolar conduction and low ON state current are problems with traditional TFET.
Sudha Subhalaxmi Muduli, Ananya Dastidar, Aruna Tripathy, Sukanta Kumar Swain   +3 more
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Operation Mechanism of a MoS2/BP Heterojunction FET

Nanomaterials, 2018
The electrical characteristics and operation mechanism of a molybdenum disulfide/black phosphorus (MoS2/BP) heterojunction device are investigated herein. Even though this device showed a high on-off ratio of over 1 × 107, with a lower subthreshold
Sung Kwan Lim, Soo Cheol Kang, Tae Jin Yoo, Sang Kyung Lee, Hyeon Jun Hwang, Byoung Hun Lee   +5 more
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Highly Sensitive SOI-TFET Gas Sensor Utilizing Tailored Conducting Polymers for Selective Molecular Detection and Microbial Biosensing Integration

Biosensors
We present a highly sensitive and selective gas sensor based on an advanced silicon-on-insulator tunnel field-effect transistor (SOI-TFET) architecture, enhanced through the integration of customized conducting polymers. In this design, traditional metal
Mohammad K. Anvarifard, Zeinab Ramezani
doaj   +1 more source

Performance Study and Analysis of Heterojunction Gate All Around Nanowire Tunneling Field Effect Transistor [PDF]

Journal of Optoelectronical Nanostructures, 2019
In this paper, we have presented a heterojunction gate all around nanowiretunneling field effect transistor (GAA NW TFET) and have explained its characteristicsin details.
Mahsa Roohy, Reza Hosseini
doaj  

Band-Tails Tunneling Resolving the Theory-Experiment Discrepancy in Esaki Diodes

IEEE Journal of the Electron Devices Society, 2018
Discrepancies exist between the theoretically predicted and experimentally measured performance of band-to-band tunneling devices, such as Esaki diodes and tunnel field-effect transistors (TFETs).
Jasper Bizindavyi, Anne S. Verhulst, Quentin Smets, Devin Verreck, Bart Soree, Guido Groeseneken   +5 more
doaj   +1 more source