Results 11 to 20 of about 13,608 (259)

Integration of resonant band with asymmetry in ferroelectric tunnel junctions

npj Computational Materials, 2022
We propose that the asymmetry-induced tunneling electroresistance (TER) effect in a ferroelectric tunnel junction (FTJ) could be improved by integrating a polarization-controlled resonant band. Using first-principles calculations and a quantum-mechanical
Jing Su, Jing Li, Xingwen Zheng, Shijie Xie, Xiaohui Liu   +4 more
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Nano-buffer controlled electron tunneling to regulate heterojunctional interface emission

Opto-Electronic Advances, 2021
Interface emission from heterojunction is a shortcoming for electroluminescent devices. A buffer layer introduced in the heterojunctional interfaces is a potential solution for the challenge.
Wei Liu, Zhuxin Li, Zengliang Shi, Ru Wang, Yizhi Zhu, Chunxiang Xu   +5 more
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Band-to-Band Tunneling Based Ultra-Energy-Efficient Silicon Neuron [PDF]

IEEE Transactions on Electron Devices, 2020
The human brain comprises about a hundred billion neurons connected through quadrillion synapses. Spiking Neural Networks (SNNs) take inspiration from the brain to model complex cognitive and learning tasks. Neuromorphic engineering implements SNNs in hardware, aspiring to mimic the brain at scale (i.e., 100 billion neurons) with biological area and ...
Tanmay Chavan, Sangya Dutta, Nihar R. Mohapatra, Udayan Ganguly   +3 more
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Resonant Tunneling of Electrons and Holes through the In_xGa_1−xN/GaN Parabolic Quantum Well/LED Structure

Crystals, 2022
Models describing the tunneling of electrons and holes through parabolic InxGa1−xN/GaN quantum well/LED structures with respect to strain were developed. The transmission coefficient, tunneling lifetime, and efficiency of LED structures were evaluated by
Hind Althib
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A Novel L-Gate InGaAs/GaAsSb TFET with Improved Performance and Suppressed Ambipolar Effect

Micromachines, 2022
A heterojunction tunneling field effect transistor with an L-shaped gate (HJ-LTFET), which is very applicable to operate at low voltage, is proposed and studied by TCAD tools in this paper.
Boyang Ma, Shupeng Chen, Shulong Wang, Tao Han, Hao Zhang, Chenyu Yin, Yaolin Chen, Hongxia Liu   +7 more
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Bilayer tunneling field effect transistor with oxide-semiconductor and group-IV semiconductor hetero junction: Simulation analysis of electrical characteristics

AIP Advances, 2019
Operation mechanisms and electrical characteristics of tunneling field-effect transistors (TFETs) employing a hetero tunneling junction by utilizing an n-type oxide-semiconductor (OS) and a p-type group-IV-semiconductor are comprehensibly analyzed.
Kimihiko Kato, Hiroaki Matsui, Hitoshi Tabata, Mitsuru Takenaka, Shinichi Takagi   +4 more
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Ab initio simulation study of defect assisted Zener tunneling in GaAs diode

AIP Advances, 2017
The band to band tunneling of defective GaAs nano-junction is studied by using the non-equilibrium Green’s function formalism with density functional theory.
Juan Lu, Zhi-Qiang Fan, Jian Gong, Xiang-Wei Jiang   +3 more
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Tunnel Field-Effect Transistor: Impact of the Asymmetric and Symmetric Ambipolarity on Fault and Performance in Digital Circuits

Journal of Low Power Electronics and Applications, 2022
Tunnel Field-Effect Transistors (TFETs) have been considered one of the most promising technologies to complement or replace CMOS for ultra-low-power applications, thanks to their subthreshold slope below the well-known limit of 60 mV/dec at room ...
Chiara Elfi Spano, Fabrizio Mo, Roberta Antonina Claudino, Yuri Ardesi, Massimo Ruo Roch, Gianluca Piccinini, Marco Vacca   +6 more
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Performance Analysis of a Steep-Slope Bi-Channel GaSb-GaAs Extended Source Tunnel Field Effect Transistor with Enhanced Band-to-Band Tunneling Current [PDF]

Journal of Applied Research in Electrical Engineering
This paper presents a comprehensive investigation of the electrical properties of a heterojunction tunnel field effect transistor with enhanced electrical tunneling current.
Zahra Ahangari
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Exploiting Within-Channel Tunneling in a Nanoscale Tunnel Field-Effect Transistor

IEEE Open Journal of Nanotechnology, 2020
In this paper, using device simulations, we investigate electrical characteristics of a tunnel field-effect transistor (TFET) in which band-to-band tunneling (BTBT) occurs dominantly within the channel, rather than at source-channel junction.
Shelly Garg, Sneh Saurabh
doaj   +1 more source