Results 41 to 50 of about 720 (167)

A new line tunneling SiGe/Si iTFET with control gate for leakage suppression and subthreshold swing improvement

Discover Nano, 2023
This article presents a new line tunneling dominating metal–semiconductor contact-induced SiGe–Si tunnel field-effect transistor with control gate (CG-Line SiGe/Si iTFET). With a structure where two symmetrical control gates at the drain region are given
Jyi-Tsong Lin, Shao-Cheng Weng
doaj   +1 more source

Integrated Field‐Free SOT Domain‐Wall Synapses and MTJ Stochastic Neurons for Hardware Boltzmann Machines

Advanced Functional Materials, EarlyView.
Field‐free spin‐orbit torque domain‐wall synapses integrated with stochastic MTJ neurons enable compact hardware Boltzmann machines. Leveraging intrinsic stochasticity and multi‐level conductance, the system achieves efficient probabilistic learning with high accuracy, demonstrating a scalable spintronic platform for energy‐efficient edge AI.
Aijaz H. Lone, Meng Tang, Camelia Florica, Bin He, Jingkai Xu, Selma Amara, Georgian Melinte, Xixiang Zhang, Gianluca Setti   +8 more
wiley   +1 more source

3D‐Printed Piezoionic/Bioelectronic Hydrogel for Electro‐Metabolic Regulation of Osteogenic Differentiation

Advanced Healthcare Materials, EarlyView.
A 3D‐printed piezoionic GPMx hydrogel enables stable electromechanical signal generation under mechanical loading, exhibiting long‐term durability and low fatigue. As a bioactive patch, it restores endogenous bioelectricity to stimulate osteogenesis via Ca2+ influx and mitochondrial activation, while simultaneously enabling label‐free alkaline ...
Sayan Deb Dutta, Myoung Joon Jeon, Youjin Seol, Ki‐Taek Lim   +3 more
wiley   +1 more source

Ferroelectric Quantum Dots for Retinomorphic In‐Sensor Computing

Advanced Materials, EarlyView.
This work has provided a protocol for fabricating retinomorphic phototransistors by integrating ferroelectric ligands with quantum dots. The resulting device combines ferroelectricity, optical responsiveness, and low‐power operation to enable adaptive signal amplification and high recognition accuracy under low‐light conditions, while supporting ...
Tingyu Long, Huanyu Zhou, Jaewan Ko, Hongwei Tan, Jaemin Lim, Yanfei Zhao, Daehan Kang, Eojin Yoon, Gyeong‐Tak Go, Somin Kim, Seung‐Woo Lee, Chan‐Yul Park, Hyojun Choi, Hyeran Kim, Hyung Joong Yun, Sung Hyuk Park, Kwan Sik Park, Jeong Woo Park, Mungeun Kim, Yong Soo Cho, Ho Won Jang, Wenqiang Yang, Min Hyuk Park, Wan Ki Bae, Sebastiaan van Dijken, Joona Bang, Tae‐Woo Lee   +26 more
wiley   +1 more source

Stepwise On‐Surface Synthesis and Transformations of Two‐Dimensional Covalent Organic Frameworks by Controlled Thermal Stimuli

Advanced Materials, EarlyView.
The seminal transformation of a 2D‐COF (SURFCOF‐IMDEA1) into a 2D porous COF (SURFCOF‐IMDEA2) on Au(111) by a sequential C‐C coupling and ladderization triggered by thermal annealing steps at increasing temperatures is reported. Abstract The development of covalent organic frameworks (COFs) is currently a primary objective in materials science, taking ...
Ana Barragán, Elena Pérez‐Elvira, Diego J. Vicent, Marco Lozano, Diego Soler‐Polo, Koen Lauwaet, José M. Gallego, Rodolfo Miranda, José I. Urgel, Pavel Jelínek, Nazario Martín, David Écija   +11 more
wiley   +1 more source

Band-Offset Engineering for GeSn-SiGeSn Hetero Tunnel FETs and the Role of Strain

IEEE Journal of the Electron Devices Society, 2015
In this paper a simulation study of the effect of conduction and valence band offsets on the subthreshold swing (SS) of a double-gate tunnel field-effect transistor (TFET) with gate-overlapped source is presented.
Saurabh Sant, Andreas Schenk
doaj   +1 more source

Kelvin Probe Force Microscopy in Bionanotechnology: Current Advances and Future Perspectives

Advanced Materials, EarlyView.
Kelvin probe force microscopy (KPFM) enables the nanoscale mapping of electrostatic surface potentials. While widely applied in materials science, its use in biological systems remains emerging. This review presents recent advances in KPFM applied to biological samples and provides a critical perspective on current limitations and future directions for
Ehsan Rahimi, Mario Palacios‐Corella, Arjan Mol, Salvador Pané, Josep Puigmartí‐Luis   +4 more
wiley   +1 more source

Design and Performance Optimization of a Bi-Channel Ge-GaAs Vertical Tunnel Field Effect Transistor with High Switching Speed and Improved Tunneling Rate [PDF]

Iranian Journal of Electrical and Electronic Engineering
In this paper, an innovative vertical bi-channel tunnel field effect transistor is presented that exploits line tunneling mechanism to achieve improved electrical performance.
Zahra Ahangari
doaj  

Spin and Charge Control of Topological End States in Chiral Graphene Nanoribbons on a 2D Ferromagnet

Advanced Materials, EarlyView.
Chiral graphene nanoribbons on a ferromagnetic gadolinium‐gold surface alloy display tunable spin and charge states at their termini. Atomic work function variations and exchange fields enabe transitions between singlet, doublet, and triplet configurations.
Leonard Edens, Francisco Romero‐Lara, Trisha Sai, Kalyan Biswas, Manuel Vilas‐Varela, Thomas Frederiksen, Diego Peña, Fabian Schulz, Jose Ignacio Pascual   +8 more
wiley   +1 more source

High Performance Drain Engineered InGaN Heterostructure Tunnel Field Effect Transistor

Micromachines, 2019
A drain engineered InGaN heterostructure tunnel field effect transistor (TFET) is proposed and investigated by Silvaco Atlas simulation. This structure uses an additional metal on the drain region to modulate the energy band near the drain/channel ...
Xiaoling Duan, Jincheng Zhang, Jiabo Chen, Tao Zhang, Jiaduo Zhu, Zhiyu Lin, Yue Hao   +6 more
doaj   +1 more source