Results 21 to 30 of about 86,811,437 (336)
Ab initio simulation study of defect assisted Zener tunneling in GaAs diode
The band to band tunneling of defective GaAs nano-junction is studied by using the non-equilibrium Green’s function formalism with density functional theory.
Juan Lu +3 more
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University Concert Band, University Symphonic Band, November 13, 1980
Recorded during a live performance at Miller Auditorium, Western Michigan University, Kalamazoo, Michigan on November 13, 1980, 8:00 p.m., program no.
Western Michigan University. Concert Band
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Tunnel Field-Effect Transistors (TFETs) have been considered one of the most promising technologies to complement or replace CMOS for ultra-low-power applications, thanks to their subthreshold slope below the well-known limit of 60 mV/dec at room ...
Chiara Elfi Spano +6 more
doaj +1 more source
Tunnel FET (TFET) has potential applications in the next generation ultra-low power transistor to substitute the conventional FETs. It can offer very steep inverse subthreshold swing slope to maintain a low leakage current, thus it can be very essential ...
E. D. Kurniawan +3 more
semanticscholar +1 more source
University Concert Band, University Symphonic Band, February 17, 1980
Recorded during a live performance at Miller Auditorium, Western Michigan University, Kalamazoo, Michigan, February 17, 1980, program no. 205 of the Department of Music's 1979-1980 season.University Concert Band, Gregory Talford, conductor (1st-4th works)
Western Michigan University. Concert Band
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Comparative performance analysis of different gate structure engineering on double gate tunnel FET
Through band-to-band tunneling, Tunnel Field Effect Transistors (TFETs) reduce leakage and subthreshold swing, giving them an advantage over MOSFET. However, ambipolar conduction and low ON state current are problems with traditional TFET.
Sudha Subhalaxmi Muduli +3 more
doaj +1 more source
Performance Analysis of a Steep-Slope Bi-Channel GaSb-GaAs Extended Source Tunnel Field Effect Transistor with Enhanced Band-to-Band Tunneling Current [PDF]
This paper presents a comprehensive investigation of the electrical properties of a heterojunction tunnel field effect transistor with enhanced electrical tunneling current.
Zahra Ahangari
doaj +1 more source
An analytical model for the transport phenomena of a heterojunction triple metal gate all around tunneling field effect transistor (HTM GAA TFET) is developed for the first time in this paper. The continuous surface potential profile of the staggered-gap
Marjana Mahdia, Quazi Deen Mohd Khosru
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Exploiting Within-Channel Tunneling in a Nanoscale Tunnel Field-Effect Transistor
In this paper, using device simulations, we investigate electrical characteristics of a tunnel field-effect transistor (TFET) in which band-to-band tunneling (BTBT) occurs dominantly within the channel, rather than at source-channel junction.
Shelly Garg, Sneh Saurabh
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University Concert Band, University Symphonic Band, December 16, 1979
Recorded during a live performance at Miller Auditorium, Western Michigan University, Kalamazoo, Michigan, December 16, 1979, program no. 142 of the Department of Music's 1979-1980 season.1st-4th works: University Concert Band, Gregory Talford, conductor.
Western Michigan University. Concert Band,
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