Results 31 to 40 of about 720 (167)

Role of Intrinsic Electron Trapping in Negative Charging of Amorphous Alumina

Advanced Functional Materials, EarlyView.
Intrinsic electron trapping in amorphous Al2O3 is examined using hybrid‐DFT models spanning a wide density range. Both spontaneous and thermally activated trapping are identified, with pronounced spontaneous localization in dense, partly crystallized structures.
Jack W. Strand, Kaja H. Hiorth, David Gao, Valeri Afanas'ev, Jaakko Akola, Alexander L. Shluger   +5 more
wiley   +1 more source

Enhanced Terahertz Thermoelectricity Via Engineered Van Hove Singularities and Nernst Effect in Moiré Superlattices

Advanced Functional Materials, EarlyView.
Moiré band engineering in graphene/hexagonal boron nitride–based superlattices unlocks van Hove singularities (VHSs) for terahertz (THz) optoelectronics. Tuning the Fermi level near these singularities, associated with secondary neutrality points (SNPs), enhances the photothermoelectric response.
Leonid Elesin, Arthur L. Shilov, Subhajit Jana, Ilya Mazurenko, Pierre A. Pantaleon, Mikhail Kashchenko, Nikita Krivovichev, Viacheslav Dremov, Igor Gayduchenko, Takashi Taniguchi, Kenji Watanabe, Yibo Wang, Kostya S. Novoselov, Dmitry A. Svintsov, Grigory Goltsman, Elena I. Titova, Denis A. Bandurin   +16 more
wiley   +1 more source

Structural defects and recombination behavior of excited carriers in Cu(In,Ga)Se2 solar cells

AIP Advances, 2016
The carriers’ behavior in neutral region (NTR) and space charged region (SCR) of Cu(In,Ga)Se2 thin film based solar cells has been investigated by temperature dependent photoluminescence (PL-T), electroluminescence (EL-T) and current-voltage (IV-T) from ...
J. Yang, H. W. Du, Y. Li, M. Gao, Y. Z. Wan, F. Xu, Z. Q. Ma   +6 more
doaj   +1 more source

An InGaN/SiNx/Si Uniband Diode Photodetector

Advanced Photonics Research, 2022
A novel self‐powered InGaN/SiNx/Si uniband diode photodetector (PD) is introduced. The full band structure is first constructed from the transition of direct tunneling to Fowler‐Nordheim tunneling of holes through the ultrathin SiNx interlayer at forward
Jiaxun Song, Xingyu Wang, Jinyou Xu, Yongjie Chen, Hedong Chen, Yingzhi Zhao, Guofu Zhou, Richard Nötzel   +7 more
doaj   +1 more source

Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor

Advanced Functional Materials, EarlyView.
Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben, Nicolas Gauquelin, Arno Annys, Zhaoliang Liao, Jo Verbeeck, Guus Rijnders, Gertjan Koster   +6 more
wiley   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

Advanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva   +13 more
wiley   +1 more source

A VERY LOW BANDGAP LINE-TUNNEL FIELD EFFECT TRANSISTOR WITH CHANNEL-BURIED OXIDE AND LATERALLY DOPED POCKET

Tạp chí Khoa học Đại học Đà Lạt
Low bandgap and line tunneling techniques have demonstrated the most effectiveness in enhancing the on-current of tunnel field-effect transistors (TFETs).
Huu Thai Bui, Chun-Hsing Shih, Dang Chien Nguyen   +2 more
doaj   +1 more source

Comprehensive Analysis of Gate-Induced Drain Leakage in Emerging FET Architectures: Nanotube FETs Versus Nanowire FETs

IEEE Access, 2017
In this paper, we have performed a comprehensive analysis of the gate-induced drain leakage (GIDL) in emerging nanotube (NT) and nanowire (NW) FET architectures.
Shubham Sahay, Mamidala Jagadesh Kumar
doaj   +1 more source

Orbital Geometry‐Governed Response of Pressure‐Tunable Quantum Defects in hBN

Advanced Functional Materials, EarlyView.
Defects in hBN act as ultrasensitive quantum manometers when the energy of the intradefect optical transitions is modified by lattice compression. The orbital geometry of the electron wave functions governs how electron hopping and Coulomb interactions react uniquely to the reduction of the van der Waals gap and in‐plane compression, leading to robust ...
Magdalena Grzeszczyk, Danis I. Badrtdinov, Kenji Watanabe, Takashi Taniguchi, Cyrus E. Dreyer, Malte Rösner, Maciej Koperski   +6 more
wiley   +1 more source

Photon-assisted tunneling through a topological superconductor with Majorana bound states

AIP Advances, 2015
Employing the Keldysh Nonequilibrium Green’s function method, we investigate time-dependent transport through a topological superconductor with Majorana bound states in the presence of a high frequency microwave field.
Han-Zhao Tang, Ying-Tao Zhang, Jian-Jun Liu   +2 more
doaj   +1 more source