Results 31 to 40 of about 86,811,437 (336)
We present a highly sensitive and selective gas sensor based on an advanced silicon-on-insulator tunnel field-effect transistor (SOI-TFET) architecture, enhanced through the integration of customized conducting polymers. In this design, traditional metal
Mohammad K. Anvarifard, Zeinab Ramezani
doaj +1 more source
Performance Study and Analysis of Heterojunction Gate All Around Nanowire Tunneling Field Effect Transistor [PDF]
In this paper, we have presented a heterojunction gate all around nanowiretunneling field effect transistor (GAA NW TFET) and have explained its characteristicsin details.
Mahsa Roohy, Reza Hosseini
doaj
Operation Mechanism of a MoS2/BP Heterojunction FET
The electrical characteristics and operation mechanism of a molybdenum disulfide/black phosphorus (MoS2/BP) heterojunction device are investigated herein. Even though this device showed a high on-off ratio of over 1 × 107, with a lower subthreshold
Sung Kwan Lim +5 more
doaj +1 more source
Band-Tails Tunneling Resolving the Theory-Experiment Discrepancy in Esaki Diodes
Discrepancies exist between the theoretically predicted and experimentally measured performance of band-to-band tunneling devices, such as Esaki diodes and tunnel field-effect transistors (TFETs).
Jasper Bizindavyi +5 more
doaj +1 more source
The cytoskeleton‐mediated transport of mitochondria via tunnelling nanotubes restores respiration, increases ATP production, rescues cells from apoptosis, activates the AKT/mTOR signalling pathway, promotes cell migration and invasiveness, contributes to cancer progression and treatment resistance.
Stanislava Martínková, Jan Trnka
wiley +1 more source
Tunneling Transistors Based on MoS2/MoTe2 Van der Waals Heterostructures
2-D transition metal dichalcogenides (TMDs) are promising materials for CMOS application due to their ultrathin channel with excellent electrostatic control.
Yashwanth Balaji +10 more
doaj +1 more source
Modeling of electrochemical oxide film growth – impact of band-to-band tunneling
The Point Defect Model (PDM) describes the corrosion resistance properties of oxide films based on interfacial reactions and defect transport, which are affected by the electric field inside the oxide film. The PDM assumes a constant electric field strength due to band-to-band tunneling (BTBT) of electrons and the separation of electrons and holes by ...
Bösing, Ingmar +2 more
openaire +2 more sources
Analysis of InAs vertical and lateral band-to-band tunneling transistors: Leveraging vertical tunneling for improved performance [PDF]
Using self-consistent quantum transport simulation on realistic devices, we show that InAs band-to-band Tunneling Field Effect Transistors (TFET) with a heavily doped pocket in the gate-source overlap region can offer larger ON current and steeper ...
K. Ganapathi +2 more
semanticscholar +1 more source
In this study, a novel esterase from the thermoacidophilic archaeon Thermoplasma acidophilum was biochemically and structurally characterized. Our results demonstrate that Ta0887 is a highly thermostable esterase that preferentially hydrolyzes p‐nitrophenyl hexanoate and possesses an α‐helical cap domain that likely contributes to its substrate ...
Alejandro Delgado‐Rey +4 more
wiley +1 more source
Critical band-to-band-tunnelling based optoelectronic memory
Abstract Neuromorphic vision hardware, embedded with multiple functions, has recently emerged as a potent platform for machine vision. To realize memory in sensor functions, reconfigurable and non-volatile manipulation of photocarriers is highly desirable.
Hangyu Xu +13 more
openaire +3 more sources

