Results 51 to 60 of about 86,811,437 (336)

Functionalizing Micro‐to‐Mesoscopic Electrode Architectures for Regulating Electron Transfer Behaviors in Electrocatalysis

Advanced Functional Materials, EarlyView.
A systematic review is conducted to assess the influence of electrode architecture across micro‐ to mesoscopic length scales on electron‐transfer pathways in electrocatalysis. We discuss the structure‐activity relationships in electrocatalytic applications, including resource recovery and environmental remediation, and provide cost‐effective, efficient
Manshu Zhao, Jiaojiao Zhang, Shideng Yuan, Xinmeng Yu, Keming Wan, Xiaoguang Duan, Zhining Wang   +6 more
wiley   +1 more source

University Band concert, February 15, 1981

, 2019
Recorded during a live performance at Miller Auditorium, Western Michigan University, Kalamazoo, Michigan on February 15, 1981, 3:00 p.m., program no.
Western Michigan University. Concert Band
core   +2 more sources

Comprehensive Analysis of Gate-Induced Drain Leakage in Emerging FET Architectures: Nanotube FETs Versus Nanowire FETs

IEEE Access, 2017
In this paper, we have performed a comprehensive analysis of the gate-induced drain leakage (GIDL) in emerging nanotube (NT) and nanowire (NW) FET architectures.
Shubham Sahay, Mamidala Jagadesh Kumar
doaj   +1 more source

Imaging real-space flat band localization in kagome magnet FeSn

Communications Materials, 2023
Direct imaging and tuning of flat band localization in kagome materials remains a challenge. Here, scanning tunneling microscopy and photoemission spectroscopy are used to study FeSn, revealing real-space localization and magnetic tuning of the flat band
Daniel Multer, Jia-Xin Yin, Md. Shafayat Hossain, Xian Yang, Brian C. Sales, Hu Miao, William R. Meier, Yu-Xiao Jiang, Yaofeng Xie, Pengcheng Dai, Jianpeng Liu, Hanbin Deng, Hechang Lei, Biao Lian, M. Zahid Hasan   +14 more
doaj   +1 more source

Simulation of phonon-assisted band-to-band tunneling in carbon nanotube field-effect transistors [PDF]

, 2005
Electronic transport in a carbon nanotube metal-oxide-semiconductor field effect transistor (MOSFET) is simulated using the nonequilibrium Green’s functions method with the account of electron-phonon scattering.
S. Koswatta, Mark S. Lundstrom, M. Anantram, D. Nikonov   +3 more
semanticscholar   +1 more source

Two Coexisting Pathways to Volatility in Valence‐Change Memory Devices

Advanced Functional Materials, EarlyView.
Volatile VCM‐type memristive devices exhibit current relaxation after resistive switching, but their microscopic origin remains debated. Using pulsed measurements and a new Tunnel‐DLTS approach on Pt/SrTiO3/Nb:SrTiO3 devices, we show that post‐SET volatility is predominantly ionic, while electronic contributions—arising from quasi‐Fermi‐level ...
Johannes Hellwig, Clemens Wittberg, Dimitrios Spithouris, Regina Dittmann   +3 more
wiley   +1 more source

Structural defects and recombination behavior of excited carriers in Cu(In,Ga)Se2 solar cells

AIP Advances, 2016
The carriers’ behavior in neutral region (NTR) and space charged region (SCR) of Cu(In,Ga)Se2 thin film based solar cells has been investigated by temperature dependent photoluminescence (PL-T), electroluminescence (EL-T) and current-voltage (IV-T) from ...
J. Yang, H. W. Du, Y. Li, M. Gao, Y. Z. Wan, F. Xu, Z. Q. Ma   +6 more
doaj   +1 more source

Binary‐to‐Ternary Reconfigurable Transistors Using Plasma‐Assisted MoS2

Advanced Functional Materials, EarlyView.
A binary‐to‐ternary reconfigurable transistor is demonstrated using a dual‐gated molybdenum disulfide homojunction with localized O2 plasma treatment. The device exhibits on/intermediate and intermediate/off current ratios of 102 and 104, respectively, and the intermediate state is electrically tunable in the ternary mode.
Yeonghyeon Ko, Jungi Song, Minsu Kim, Yongwook Seok, Seongje Moon, Kenji Watanabe, Takashi Taniguchi, Kayoung Lee   +7 more
wiley   +1 more source

A VERY LOW BANDGAP LINE-TUNNEL FIELD EFFECT TRANSISTOR WITH CHANNEL-BURIED OXIDE AND LATERALLY DOPED POCKET

Tạp chí Khoa học Đại học Đà Lạt
Low bandgap and line tunneling techniques have demonstrated the most effectiveness in enhancing the on-current of tunnel field-effect transistors (TFETs).
Huu Thai Bui, Chun-Hsing Shih, Dang Chien Nguyen   +2 more
doaj   +1 more source

Light‐Induced Field‐Tunneling Synapses in Solution‐Processed Van Der Waals Heterostructures for Scalable, Retina‐Inspired Optical Sensing

Advanced Functional Materials, EarlyView.
A scalable, solution‐processed WSe2/ZrO2‐x van der Waals heterostructure realizes a light‐induced field‐tunneling synapse (LIFTS) that activates exclusively under bright illumination, emulating the photopic adaptation of the human retina at the device level.
Kijeong Nam, Jihyun Kim, Soobeen Ji, In Soo Kim, Sejin Kim, Eungseon Yeon, Do Kyung Hwang, Iva Plutnarová, Zdeněk Sofer, Sang Min Won, Joohoon Kang   +10 more
wiley   +1 more source