Results 61 to 70 of about 720 (167)

LEAD: Literature Enhanced Ab Initio Discovery of Nitride Dusting Layers for Enhanced Tunnel Magnetoresistance and Lower Resistance Magnetic Tunnel Junctions

open access: yesAdvanced Materials, EarlyView.
Magnetic tunnel junctions (MTJs) using MgO tunnel barriers face challenges of high resistance‐area product and low tunnel magnetoresistance (TMR). To discover alternative materials, Literature Enhanced Ab initio Discovery (LEAD) is developed. The LEAD‐predicted materials are theoretically evaluated, showing that MTJs with dusting of ScN or TiN on ...
Sabiq Islam   +6 more
wiley   +1 more source

Ternary CMOS Compact Model for Low Power On-Chip Memory Applications

open access: yesIEEE Journal of the Electron Devices Society
In this work, we present a tunneling based ternary CMOS (T-CMOS) compact model for low power ternary-SRAM (T-SRAM) design using CMOS technology. By designing compact model parameters of band-to-band tunneling current $(I_{\mathrm { BTBT}})$ according ...
Young-Eun Choi   +5 more
doaj   +1 more source

Photo-Induced Unpinning of Fermi Level in WO3

open access: yesSensors, 2005
Atomic force and high resolution scanning tunneling analyses were carried out onnanostructured WO3 films. It turned out that the band gap measured by scanning tunnelingspectroscopy at surface is lower than the band gap reported in the literature.
Steve P. Wilks   +9 more
doaj   +1 more source

Gapless Superconductivity From Extremely Dilute Magnetic Disorder in 2H‐NbSe2‐xSx

open access: yesAdvanced Materials, EarlyView.
We demonstrate that 2H‐NbSe2‐xSx hosts gapless superconductivity at unexpectedly low magnetic impurity concentrations. Combining STM, Bogoliubovde Gennes simulations, DFT, and quasiparticle interference, we comprehensively study the development of gapless behavior and show that SeS substitution reshapes the band structure, enhances nesting, and drives ...
Jose Antonio Moreno   +16 more
wiley   +1 more source

Geometric effect in a vertical stack-up metal-insulator-metal tunnel diode

open access: yesAIP Advances, 2017
The geometric effect was investigated in a vertically designed metal-insulator-metal (MIM) tunnel diode for which a narrow tunneling distance can be controlled easily and reliably, with the goal of enhancing rectifying efficiency, based on the angle of a
Jeong Hee Shin   +3 more
doaj   +1 more source

Self‐Assembled Monolayers in p–i–n Perovskite Solar Cells: Molecular Design, Interfacial Engineering, and Machine Learning–Accelerated Material Discovery

open access: yesAdvanced Materials, EarlyView.
This review highlights the role of self‐assembled monolayers (SAMs) in perovskite solar cells, covering molecular engineering, multifunctional interface regulation, machine learning (ML) accelerated discovery, advanced device architectures, and pathways toward scalable fabrication and commercialization for high‐efficiency and stable single‐junction and
Asmat Ullah, Ying Luo, Stefaan De Wolf
wiley   +1 more source

Peroral endoscopic tunneling stricturotomy for diverticulum treatment: novel procedure for pediatric esophageal anastomotic diverticula

open access: yesVideoGIE
Background and Aims: This case details an 8-year-old female patient with a type C tracheoesophageal fistula and esophageal atresia who developed a symptomatic diverticulum proximal to an anastomotic scar band.
Taylor J. Kratochvil, MD, MS   +4 more
doaj   +1 more source

Room‐Temperature Skyrmionic Synapse in 2D Ferromagnet Fe3GaTe2 Operating via Collective Spin Texture Transformation

open access: yesAdvanced Materials, EarlyView.
We demonstrate a neuromorphic synapse in 2D Fe3GaTe2 flakes. The device operates via a current‐driven transformation from a skyrmion‐lattice to a stripe‐domain state, yielding a linear anomalous Hall resistance response with a tunable slope to enable multiply‐accumulate operations. Simulations confirm its viability in artificial neural networks.
Jixiang Huang   +20 more
wiley   +1 more source

Quasi‐Resonant Tunneling Transport in Magnetic CrBr3

open access: yesAdvanced Physics Research
Tunneling techniques are pivotal for probing 2D magnetic materials. While the Fowler‐Nordheim model describes tunneling in bulk materials through bias‐induced triangular potentials, van der Waals layered systems require special consideration of ...
Gen Long   +8 more
doaj   +1 more source

Relationship between band-offset, gate leakage current, and interface states density at SiO2/4H-SiC (000-1) interface

open access: yesAIP Advances, 2019
We investigated the relationship between the band-offset, the gate leakage current, and the interface states density on SiO2/4H-SiC (000-1) structures via hard x-ray photoelectron spectroscopy and electrical measurements.
Efi Dwi Indari   +5 more
doaj   +1 more source

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