Results 61 to 70 of about 86,811,437 (336)

An InGaN/SiNx/Si Uniband Diode Photodetector

Advanced Photonics Research, 2022
A novel self‐powered InGaN/SiNx/Si uniband diode photodetector (PD) is introduced. The full band structure is first constructed from the transition of direct tunneling to Fowler‐Nordheim tunneling of holes through the ultrathin SiNx interlayer at forward
Jiaxun Song, Xingyu Wang, Jinyou Xu, Yongjie Chen, Hedong Chen, Yingzhi Zhao, Guofu Zhou, Richard Nötzel   +7 more
doaj   +1 more source

Roll‐to‐Roll Processable EC/TC Hybrid Smart Windows Driven by a Bidirectional Dual‐Chromic Polymer Electrolyte

Advanced Functional Materials, EarlyView.
We present a scalable EC/TC hybrid smart window using a DCPE that enables tunable solar modulation (ΔTsol:15–43%), fast electrochromic switching (<90 s), and strong thermal blocking (10–14°C reduction). HPMC improves thermal stability, while an optimized ISL enhances EC performance.
Soyeon Kim, Euiseok Jeong, Muhammad Jahandar, Huynh Tan Thanh Kha, Dong Chan Lim   +4 more
wiley   +1 more source

Photon-assisted tunneling through a topological superconductor with Majorana bound states

AIP Advances, 2015
Employing the Keldysh Nonequilibrium Green’s function method, we investigate time-dependent transport through a topological superconductor with Majorana bound states in the presence of a high frequency microwave field.
Han-Zhao Tang, Ying-Tao Zhang, Jian-Jun Liu   +2 more
doaj   +1 more source

Multi‐Level Saturation Current Encoding in Two‐Dimensional Ferroelectric Source‐Gated Transistors

Advanced Functional Materials, EarlyView.
A 2D ferroelectric source‐gated transistor (SGT) operates with a non‐volatile, multi‐level saturation current controlled by ferroelectric polarization. Operando electrostatic and photocurrent imaging link the current limitation to source‐side depletion, identifying saturation current as a programmable, read‐bias‐tolerant device parameter toward low ...
Joon‐Seok Kim, Ting‐Ching Chu, Zhehao Zhu, Lincoln J. Lauhon   +3 more
wiley   +1 more source

Electrochemical Pathways for Nitrate Conversion to Ammonia: From Environmental Challenges to Ammonia Economy

Advanced Functional Materials, EarlyView.
This perspective presents recent advances in electrocatalytic nitrate reduction, focusing on reaction mechanisms, catalyst design, and electrolyzer configurations. Key challenges in selectivity, stability, and practical wastewater treatment are highlighted, while future directions for advancing sustainable ammonia synthesis and nitrate remediation are ...
Xintong Li, Yunpeng Zuo, Xiaoran Zhang, Jieqiong Shan, Kenneth Mei Yee Leung, Bin Liu, Peter Strasser, Adrian Fisher, Zonglong Zhu, Xin Wang   +9 more
wiley   +1 more source

Exchange‐Coupled Two‐Dimensional MOFs

Advanced Functional Materials, EarlyView.
Graphene mediates ferromagnetic coupling between two‐dimensional metal‐organic frameworks and cobalt. Fe‐tetracyanobenzene develops a remanent magnetic response whose orientation follows the cobalt magnetization direction and persists up to room temperature, whereas Ni‐TCNB remains only field‐polarized.
Iulia Cojocariu, Pierluigi Gargiani, Manuel Valvidares, Frederik Schirdewahn, Matthias Muntwiler, Matteo Jugovac   +5 more
wiley   +1 more source

Design and Performance Optimization of a Bi-Channel Ge-GaAs Vertical Tunnel Field Effect Transistor with High Switching Speed and Improved Tunneling Rate [PDF]

Iranian Journal of Electrical and Electronic Engineering
In this paper, an innovative vertical bi-channel tunnel field effect transistor is presented that exploits line tunneling mechanism to achieve improved electrical performance.
Zahra Ahangari
doaj  

Anisotropic Phonon Dynamics and Directional Transport in Actinide Van der Waals Semiconductor Uranium Triselenide

Advanced Functional Materials, EarlyView.
USe3 is introduced as an actinide van der Waals semiconductor that mirrors the quasi‐one‐dimensional physics of transition‐metal trichalcogenides. Polarization‐resolved Raman spectroscopy on exfoliated flakes maps strong in‐plane phonon anisotropy and strain‐tunable mode shifts.
Aljoscha Söll, Valentino Jadriško, Sourav Dey, Nassima Benchtaber, Kalyan Sarkar, Borna Radatović, Jan Luxa, Fedor Lipilin, Kseniia Mosina, Vojtěch Kundrát, Jakub Zalesak, Jana Vejpravová, Martin Žáček, Szymon J. Zelewski, Nikolas Antonatos, Christoph Gadermaier, José J. Baldoví, Zdeněk Sofer   +17 more
wiley   +1 more source

Enhanced Ferroelectric Phase Formation via Local Structure Modification in the Pre‐Crystalline State of Hafnium Zirconium Oxide Thin Films

Advanced Functional Materials, EarlyView.
Hafnium zirconium oxide thin films are grown using plasma‐enhanced atomic layer deposition with the addition of an atomic layer annealing (ALA) step. ALA leads to a change in the short‐range structure of the deposit and encourages formation of the ferroelectric Pca21 phase. The result is wake‐up‐free performance with films exposed to ALA.
Nicolas K. Lam, Gerald R. Bejger, Waseem A. Wani, Kristina M. Holsgrove, Andrew N. Titus, Niyorjyoti Sharma, Shihao Wang, Keithen Orson, Megan K. Lenox, Liron Shvilberg, Yong Kyu Choi, Ian A. Brummel, Benjamin L. Aronson, Petra Reinke, Quentin Ramasse, Amit Kumar, Brian J. Rodriguez, Christina M. Rost, Jon F. Ihlefeld   +18 more
wiley   +1 more source

Band-Offset Engineering for GeSn-SiGeSn Hetero Tunnel FETs and the Role of Strain

IEEE Journal of the Electron Devices Society, 2015
In this paper a simulation study of the effect of conduction and valence band offsets on the subthreshold swing (SS) of a double-gate tunnel field-effect transistor (TFET) with gate-overlapped source is presented.
Saurabh Sant, Andreas Schenk
doaj   +1 more source